Browsing by author "Beckhoff, Burkhard"
Now showing items 1-20 of 28
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A compact vibration reduced set-up for scanning nm-XRF and STXM
Lubeck, Janin; Seim, Christian; Dehlinger, Aurelie; Haidl, Andreas; Hoenicke, Philipp; Kayser, Yves; Unterumsberger, Rainer; Fleischmann, Claudia; Beckhoff, Burkhard (2018) -
ALD growth behavior of high-k nanolayers on various substrates characterized by X-Ray Spectrometry in gracing incidence geometry
Müller, Matthias; Sioncke, Sonja; Delabie, Annelies; Beckhoff, Burkhard (2013) -
ALD on high mobility channels: engineering the proper gate stack passivation
Sioncke, Sonja; Lin, Hang Chun; Adelmann, Christoph; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Franquet, Alexis; Caymax, Matty; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, K.; Vantomme, Andre; Muller, Matthias; Kolbe, Michael; Beckhoff, Burkhard; Schmeisser, Dieter; Tallarida, Massimo (2010) -
ALD on high mobility channels: engineering the proper gate stack passivation
Sioncke, Sonja; Lin, Dennis; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Caymax, Matty; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Beckhoff, Burkhard (2010) -
Aluminium oxide atomic layer deposition on semiconductor substrates
Delabie, Annelies; Sioncke, Sonja; Rip, Jens; Van Elshocht, Sven; Pourtois, Geoffrey; Mueller, Matthias; Beckhoff, Burkhard; Pierloot, Kristine (2011) -
Atomic layer deposition of Al2O3 on S-passivated Ge
Sioncke, Sonja; Ceuppens, Joris; Lin, Dennis; Nyns, Laura; Delabie, Annelies; Struyf, Herbert; De Gendt, Stefan; Muller, Matthias; Beckhoff, Burkhard; Caymax, Matty (2011) -
Atomic layer deposition of high-k dielectrics on sulphur-passivated germanium
Sioncke, Sonja; Lin, Dennis; Nyns, Laura; Brammertz, Guy; Delabie, Annelies; Conard, Thierry; Franquet, Alexis; Meuris, Marc; Struyf, Herbert; De Gendt, Stefan; Heyns, Marc; Fleischmann, Claudia; Temst, Kristiaan; Vantomme, Andre; Muller, Matthias; Kobe, Michael; Beckhoff, Burkhard; Caymax, Matty (2011) -
Characterization of semiconductor samples using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy
Hermann, Peter; Hoehl, Arne; Ulrich, Georg; Fleischmann, Claudia; Hermelink, Antje; Kästner, Bernd; Patoka, Piotr; Hornemann, Andrea; Beckhoff, Burkhard; Rühl, Eckart; Ulm, Gerhard (2014) -
Development and reference-free characterization of 3D nanostructures as potential calibration sample for analytical techniques
Dialameh, Masoud; Ferrarese Lupi, Federico; De Leo, Natascia; Boarino, Luca; Hönicke, Philipp; Kayser, Yves; Beckhoff, Burkhard; Weimann, Thomas; Fleischmann, Claudia; Vandervorst, Wilfried (2017) -
Development and synchrotron-based characterization of Al and Cr nanostructures as potential calibration samples for 3D analytical techniques
Dialameh, Masoud; Ferrarese Lupi, Federico; Hönicke, Philipp; Kayser, Yves; Beckhoff, Burkhard; Weimann, Thomas; Fleischmann, Claudia; Vandervorst, Wilfried; Dub "cek, Pavo; Pivac, Branko; Perego, Michele; Seguini, Gabriele; De Leo, Natascia; Boarino, Luca (2018) -
Grazing incidence X-ray fluorescence analysis for the characterization of Ge1-xSnx thin films
Hoenicke, Philipp; Fleischmann, Claudia; Hermann, Peter; Beckhoff, Burkhard (2014) -
Liquid-phase adsorption of sulfur on germanium: reaction mechanism and atomic geometry
Fleischmann, Claudia; Houssa, Michel; Müller, Matthias; Beckhoff, Burkhard; Boyen, Hans-Gerd; Meuris, Marc; Temst, Kristiaan; Vantomme, Andre (2013) -
Mechanism of modification of fluorocarbon polymer by ultraviolet irradiation in oxygen atmosphere
Le, Quoc Toan; Naumov, Sergej; Conard, Thierry; Franquet, Alexis; Müller, Matthias; Beckhoff, Burkhard; Adelmann, Christoph; Struyf, Herbert; De Gendt, Stefan; Baklanov, Mikhaïl (2013) -
NEXAFS characterization of inorganic and organic materials for semiconductor application
Fleischmann, Claudia; Hoenicke, Philipp; Hermann, Peter; Mueller, Matthias; Beckhoff, Burkhard; Voroshazi, Eszter; Conard, Thierry; Vandervorst, Wilfried (2014) -
Quantification of high-K nanolayers for semiconductor applications using synchrotron radiation and calibrated instrumentation
Mueller, Matthias; Hoenicke, Philipp; Detlefs, Blanka; Fleischmann, Claudia; Vandervorst, Wilfried; Beckhoff, Burkhard (2014) -
Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates
Delabie, Annelies; Sioncke, Sonja; Rip, Jens; Van Elshocht, Sven; Pourtois, Geoffrey; Mueller, Matthias; Beckhoff, Burkhard; Pierloot, Kristine (2012) -
Reference-free, depth dependent characterization of nanoscale materials by combined X-ray reflectivity and grazing incidence X-ray fluorescence analysis
Hoenicke, Philipp; Mueller, Matthias; Detlefs, Blanka; Fleischmann, Claudia; Beckhoff, Burkhard (2014) -
Reference-free, depth-dependent characterization of nanoscaled materials using a combined grazing incidence X-ray fluorescence and X-ray reflectometry approach
Hoenicke, Philipp; Detlefs, Blanka; Fleischmann, Claudia; Vandervorst, Wilfried; Mueller, Matthias; Nolot, Emmanuel; Grampeix, Helen; Beckhoff, Burkhard (2015) -
Reference-free, in-depth characterization of nanoscaled systems with advanced grazing incidence X-ray fluorescence analysis
Hoenicke, Philipp; Mueller, Matthias; Detlefs, Blanka; Fleischmann, Claudia; Beckhoff, Burkhard (2014) -
S-passivation of the Ge gate stack using (NH4)2S
Sioncke, Sonja; Fleischmann, Claudia; Lin, Dennis; Vrancken, Evi; Caymax, Matty; Meuris, Marc; Temst, Kristiaan; Vantomme, Andre; Muller, Matthias; Kolbe, Michael; Beckhoff, Burkhard (2010)