Browsing by author "Gaubas, Eugenijus"

A simple technique for the separation of bulk and surface recombination parameters in silicon

Gaubas, Eugenijus; Vanhellemont, Jan (1996)

Analysis of the diffusion currrent in cobalt silicided n+p junctions

Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Gaubas, Eugenijus; Czerwinski, A. (1998)

Carrier lifetime spectrocopy for defect characterization in semiconductor materials and devices

Gaubas, Eugenijus; Simoen, Eddy; Vanhellemont, Jan (2016)

Characterisation of high-energy proton irradiation induced recombination centers in silicon

Kaniava, Arvydas; Vanhellemont, Jan; Simoen, Eddy; Claeys, C.; Gaubas, Eugenijus (1996)

Correlation between radiation induced defects and lifetime degradation in high energy particle exposed float-zone silicon diodes

Simoen, Eddy; Claeys, Cor; Gaubas, Eugenijus; Ohyama, Hidenori (1998)

Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility Transistors

Eneman, Geert; Simoen, Eddy; Delhougne, Romain; Gaubas, Eugenijus; Simons, Veerle; Roussel, Philippe; Verheyen, Peter; Lauwers, Anne; Loo, Roger; Vandervorst, Wilfried; De Meyer, Kristin; Claeys, Cor (2004)

Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors

Eneman, Geert; Simoen, Eddy; Delhougne, Romain; Gaubas, Eugenijus; Simons, Veerle; Roussel, Philippe; Verheyen, Peter; Lauwers, Anne; Loo, Roger; Vandervorst, Wilfried; De Meyer, Kristin; Claeys, Cor (2005)

Diode assessment of material characteristics in internally gettered and non-gettered Czochralski silicon: problems, pitfalls and guidelines

Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Czerwinski, A.; Gaubas, Eugenijus (1998)

Effect of shallow junction on the extraction of the minority carrier recombination lifetime from forward diode characteristics

Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Gaubas, Eugenijus (2002)

Electrical characterisation of shallow cobalt-silicided junctions

Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Czerwinski, A.; Katcki, J.; Ratajczak, J.; Gaubas, Eugenijus (2000)

Electrical characterization of shallow cobalt-silicided junctions

Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Czerwinski, A.; Katcki, J.; Ratajczak, J.; Gaubas, Eugenijus (2001)

Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

Gaubas, Eugenijus; Simoen, Eddy; Claeys, C.; Vanhellemont, Jan (2000)

Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

Gaubas, Eugenijus; Vaitkus, J.; Simoen, Eddy; Claeys, C.; Vanhellemont, Jan (2001)

Extraction of the carrier generation and recombination lifetime from the forward characteristics of advanced diodes

Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Gaubas, Eugenijus; Huber, A.; Gräf, D. (2002)

Impact of state-of-the-art Cz substrates on the current-voltage characteristics of shallow p-n junctions

Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Huber, A.; Gräf, D.; Gaubas, Eugenijus (2002)

Impact of the divacancy (?) on the generation-recombination properties of 10MeV proton irradiated Float-Zone silicon diodes

Simoen, Eddy; Claeys, Cor; Gaubas, Eugenijus; Ohyama, Hidenori (2000)