Browsing by author "Hsu, Brent"
Now showing items 1-20 of 26
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A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Kar, Gouri Sankar (2019) -
A deep level transient spectroscopy study of hole traps in GexSe1-x-based layers for ovonic threshold switching selectors
Hsu, Brent; Simoen, Eddy; Lin, Dennis; Stesmans, Andre; Goux, Ludovic; Delhougne, Romain; Carolan, Patrick; Bender, Hugo; Kar, Gouri Sankar (2020) -
Analysis of semi-insulating carbon-doped GaN layers using deep-level transient spectroscopy
Wang, Hongyue; Wang, Jinyan; Hsu, Brent; Zhao, Ming; Simoen, Eddy; Sibaja-Hernandez, Arturo (2021-11-22) -
Are extended defects a show stopper for future III-V CMOS technologies?
Claeys, Cor; Hsu, Brent; He, Liang; Mols, Yves; Kunert, Bernardette; Langer, Robert; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Simoen, Eddy (2018-06) -
Bandlike and localized states of extended defects in n-type In0.53Ga0.47As
Hsu, Brent; Simoen, Eddy; Merckling, Clement; Eneman, Geert; Mols, Yves; Alian, AliReza; Langer, Robert; Collaert, Nadine; Heyns, Marc (2018) -
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Verhulst, Anne; Walke, Amey; Favia, Paola; Douhard, Bastien; del Alamo, Jesus Del Alamo; Lu, Wenjie; Collaert, Nadine; Merckling, Clement (2018) -
Characterization and modelling of growth-induced defects in InGaAs by MOCVD
Hsu, Brent; Simoen, Eddy; Eneman, Geert; Alian, AliReza; Mols, Yves; Heyns, Marc (2017) -
Deep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP Substrates
Simoen, Eddy; Hsu, Brent; Alian, AliReza; El Kazzi, Salim; Wang, Chong; Ori, Hiroyuki (2019) -
Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates
Syshchyk, Olga; Hsu, Brent; Yu, Hao; Motsnyi, Vasyl; Vais, Abhitosh; Kunert, Bernardette; Mols, Yves; Alcotte, Reynald; Puybaret, Renaud; Waldron, Niamh; Soussan, Philippe; Boulenc, Pierre; Karve, Gauri; Simoen, Eddy; Collaert, Nadine; Puers, Bob; Van Hoof, Chris (2020) -
Device-based threading dislocation assessment in germanium hetero-epitaxy
Simoen, Eddy; Hsu, Brent; Eneman, Geert; Rosseel, Erik; Loo, Roger; Arimura, Hiroaki; Horiguchi, Naoto; Claeys, Cor; Wen, Wei-Chen; Nakashima, Hiroshi; Oliveira, Alberto; Agopian, Paula G.D.; Martino, Joao (2019) -
Dislocations behavior in highly mismatched III-Sb growth and their impact on the fabrication of top-down n+InAs/p+GaSb NW tunneling devices
El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Favia, Paola; Merckling, Clement; Lu, Wenjie; Del Alamo, Jesus; Collaert, Nadine (2018-11) -
Do we have to worry about extended defects in high-mobility materials?
Simoen, Eddy; Hsu, Brent; He, Liang; Mols, Yves; Kunert, Bernardette; Langer, Robert; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2018) -
Electrical activity of extended defects in III-V semiconductors
Simoen, Eddy; Hsu, Brent; Mols, Yves; Kunert, Bernardette; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Claeys, Cor (2019) -
Electrical activity of extended defects in relaxed InxGa1-xAs hetero-epitaxial layers
Claeys, Cor; Hsu, Brent; Mols, Yves; Kunert, Bernardette; Bender, Hugo; Seidel, Felix; Carolan, Patrick; Langer, Robert; Merckling, Clement; Alian, AliReza; Waldron, Niamh; Eneman, Geert; Collaert, Nadine; Heyns, Marc; Simoen, Eddy (2020) -
Electron traps at sidewalls of vertical n+-GaAs/n--InGaP/p+-GaAs diodes detected with deep-level transient spectroscopy
Yu, Hao; Hsu, Brent; Vais, Abhitosh; Simoen, Eddy; Waldron, Niamh; Collaert, Nadine (2019-06) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
Impact of defects on transport in nanodevices
Simoen, Eddy; Hsu, Brent; Boudier, Dimitri; Cretu, Bogdan; Eneman, Geert; Collaert, Nadine; Claeys, Cor (2018-06) -
Investigation of defect characteristics and carrier transport mechanisms in GaN layers with different carbon doping concentration
Wang, Hongyue; Hsu, Brent; Zhao, Ming; Simoen, Eddy; Sibaja-Hernandez, Arturo; Wang, Jinyang (2020) -
Lifetime Assessment of InxGa1-xAs n-Type Hetero-Epitaxial Layers
Hsu, Brent; Simoen, Eddy; Eneman, Geert; Merckling, Clement; Mols, Yves; Heyns, Marc (2022) -
Materials and defect aspects of III-V and III-N devices for high-speed analog/RF applications
Simoen, Eddy; Hsu, Brent; Yu, Hao; Wang, Hongyue; Zhao, Ming; Takakura, Kenichiro; Putcha, Vamsi; Peralagu, Uthayasankaran; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2020)