Browsing by author "Togo, Mitsuhiro"
Now showing items 21-37 of 37
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New carbon-based thermal stability improvement technique for NiPtSi used in CMOS technology
Ortolland, Claude; Togo, Mitsuhiro; Rosseel, Erik; Mertens, Sofie; Kittl, Jorge; Lauwers, Anne; Hoffmann, Thomas Y. (2010) -
On the Rseries extraction techniques for sub-22nm CMOS Finfet and SiGe technologies
Pantisano, Luigi; Zschaetzsch, Gerd; Hellings, Geert; Krom, Raymond; Lee, Si Hyung; Ritzenthaler, Romain; Mitard, Jerome; Eneman, Geert; Roussel, Philippe; Chiarella, Thomas; Ragnarsson, Lars-Ake; Togo, Mitsuhiro; Vandervorst, Wilfried; Groeseneken, Guido; Thean, Aaron; Horiguchi, Naoto (2012) -
Orientation dependence of Si1-xCx:P growth and the impact on FinFET structues
Tolle, John; Weeks, Doran; Bauer, Matthias; Machkaoutsan, Vladimir; Maes, Jan; Togo, Mitsuhiro; Brus, Stephan; Hikavyy, Andriy; Loo, Roger (2012) -
Orientation dependence of Si1-xCx:P growth and the impact on FiNFET structures
Tolle, John; Weeks, Doran; Bauer, Matthias; Machkaoutsan, Vladimir; Maes, Jan; Togo, Mitsuhiro; Brus, Stephan; Hikavyy, Andriy; Loo, Roger (2012-10) -
Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
Togo, Mitsuhiro; Lee, Jae Woo; Pantisano, Luigi; Chiarella, Thomas; Ritzenthaler, Romain; Krom, Raymond; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Brus, Stephan; Maes, J.W.; Machkaoutsan, Vladimir; Tolle, J.; Eneman, Geert; De Keersgieter, An; Boccardi, Guillaume; Mannaert, Geert; Altamirano Sanchez, Efrain; Locorotondo, Sabrina; Demand, Marc; Horiguchi, Naoto; Thean, Aaron (2012) -
Positive bias temperature instabilities on sub-nanometer EOT FinFETs
Feijoo, Pedro C.; Cho, Moon Ju; Togo, Mitsuhiro; San Andrés, Enrique; Groeseneken, Guido (2011) -
Process dependent N/PBTI characteristics of TiN gate FinFETs
Kim, Jin Ju; Cho, Moon Ju; Pantisano, Luigi; Chiarella, Thomas; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Lee, Byoung Hun (2012) -
Reliability in gate first and gate last Ultra-Thin-EOT gate stacks assessed with CV-eMSM BTI characterization
Bury, Erik; Kaczer, Ben; Toledano Luque, Maria; Arimura, Hiroaki; Ragnarsson, Lars-Ake; Veloso, Anabela; Chew, Soon Aik; Togo, Mitsuhiro; Schram, Tom; Groeseneken, Guido (2012) -
RMG Technology Integration in FinFET Devices
Boccardi, Guillaume; Ritzenthaler, Romain; Togo, Mitsuhiro; Chiarella, Thomas; Kim, Min-Soo; Sasaki, Yuichiro; Veloso, Anabela; Chew, Soon Aik; Vecchio, Emma; Locorotondo, Sabrina; Devriendt, Katia; Ong, Patrick; Brus, Stephan; Horiguchi, Naoto; Thean, Aaron (2012) -
Simple current and capacitance methods for bulk FinFET height extraction
Chiarella, Thomas; Parvais, Bertrand; Horiguchi, Naoto; Togo, Mitsuhiro; Kerner, Christoph; Witters, Liesbeth; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2011-03) -
Stress techniques and mobility enhancement in FinFET architectures
Eneman, Geert; Witters, Liesbeth; Mitard, Jerome; Hellings, Geert; De Keersgieter, An; Brunco, David; Hikavyy, Andriy; Vincent, Benjamin; Simoen, Eddy; Favia, Paola; Bender, Hugo; Veloso, Anabela; Chiarella, Thomas; Boccardi, Guillaume; Kim, Min-Soo; Togo, Mitsuhiro; Loo, Roger; De Meyer, Kristin; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2012) -
Stress techniques in advanced transistor architectures: bulk FinFETs and implant-free quantum well transistors
Eneman, Geert; Witters, Liesbeth; Collaert, Nadine; Mitard, Jerome; Hellings, Geert; Yamaguchi, Shinpei; De Keersgieter, An; Hikavyy, Andriy; Vincent, Benjamin; Favia, Paola; Bender, Hugo; Veloso, Anabela; Chiarella, Thomas; Togo, Mitsuhiro; Loo, Roger; De Meyer, Kristin; Mercha, Abdelkarim; Horiguchi, Naoto; Thean, Aaron (2012) -
Superior NBTI reliability of SiGe channel pMOSFETs: replacement Gate, FinFETs, and impact of body bias
Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Roussel, Philippe; Grasser, T.; Mitard, Jerome; Ragnarsson, Lars-Ake; Cho, Moon Ju; Witters, Liesbeth; Chiarella, Thomas; Togo, Mitsuhiro; Wang, Wei-E; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Groeseneken, Guido (2011) -
Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
Feijoo, Pedro C.; Kauerauf, Thomas; Toledano Luque, Maria; Togo, Mitsuhiro; San Andrés, Enrique; Groeseneken, Guido (2012) -
Ultrathin EOT high-k/metal gate devices for future technologies: challenges, achievements and perspectives
Ragnarsson, Lars-Ake; Chiarella, Thomas; Togo, Mitsuhiro; Schram, Tom; Absil, Philippe; Hoffmann, Thomas Y. (2011) -
Ultrathin EOT scaling of high-k/metal gate stacks
Ragnarsson, Lars-Ake; Cho, Moon Ju; Chiarella, Thomas; Mitard, Jerome; Schram, Tom; Rohr, Erika; Witters, Liesbeth; Togo, Mitsuhiro; Horiguchi, Naoto; Thean, Aaron (2011) -
Understanding the basic advantages of bulk FinFETs for sub- and near-threshold logic from device measurements
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido (2012)