Browsing by author "Rzepa, G."

A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics

Schanovsky, F.; Rzepa, G.; Stanojevic, Z.; Kernstock, C.; Baumgartner, O.; Karner, M.; Verreck, Devin; Arreghini, Antonio; Rosmeulen, Maarten (2021)

Benchmarking time-dependent variability of junctionless nanowire FETs

Kaczer, Ben; Rzepa, G.; Franco, Jacopo; Weckx, Pieter; Vaisman Chasin, Adrian; Putcha, Vamsi; Bury, Erik; Simicic, Marko; Roussel, Philippe; Hellings, Geert; Veloso, Anabela; Matagne, Philippe; Grasser, T.; Linten, Dimitri (2017)

Characterization and modeling of charge trapping: From single defects to devices

Grasser, T.; Rzepa, G.; Waltl, M.; Goes, W.; Rott, K.; Rott, G.; Reisinger, H.; Franco, Jacopo; Kaczer, Ben (2014)

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors

Grasser, T.; Stampfer, B.; Waltl, M.; Rzepa, G.; Rupp, K.; Schanovsky, F.; Pobegen, G.; Puschkarsky, K.; Reisinger, H.; O'Sullivan, Barry; Kaczer, Ben (2018)

Efficient physical defect model applied to PBTI in high-k stacks

Rzepa, G.; Franco, Jacopo; Subirats, Alexandre; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Waltl, M.; Knobloch, T.; Stampfer, B.; Chiarella, Thomas; Horiguchi, Naoto; Ragnarsson, Lars-Ake; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2017)

Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress

Grasser, T.; Waltl, M.; Puschkarsky, K.; Stampfer, B.; Rzepa, G.; Pobegen, G.; Reisinger, H.; Arimura, Hiroaki; Kaczer, Ben (2017)

Mapping of CMOS FET degradation in bias space – Application to DRAM peripheral devices

Kaczer, Ben; Franco, Jacopo; Tyaginov, S. E.; Jech, M.; Rzepa, G.; Grasser, T.; O'Sullivan, Barry; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2017)

On the distribution of the FET threshold voltage shifts due to individual charged gate oxide defects

Kaczer, Ben; Amoroso, S. M.; Hussin, R.; Asenov, A.; Franco, Jacopo; Weckx, Pieter; Roussel, Philippe; Grasser, T.; Rzepa, G.; Horiguchi, Naoto (2016)

Physical modeling of NBTI: from individual defects to devices

Rzepa, G.; Goes, W.; Rott, G.; Rott, K.; Karner, M.; Kernstock, C.; Kaczer, Ben; Reisinger, H.; Grasser, T. (2014)

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures

Michl, J.; Grill, A.; Claes, D.; Rzepa, G.; Kaczer, B.; Linten, D.; Radu, I; Grasser, T.; Waltl, M. (2020)

Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies

Rzepa, G.; Karner, M.; Baumgartner, O.; Strof, G.; Schanovsky, F.; Mitterbauer, F.; Kernstock, C.; Karner, H. W.; Stanojevic, Z.; Weckx, Pieter; Hellings, Geert; Claes, Dieter; Wu, Zhicheng; Xiang, Yang; Chiarella, Thomas; Parvais, Bertrand; Mitard, Jerome; Franco, Jacopo; Kaczer, Ben; Linten, Dimitri (2021)