Browsing by author "Autran, J.L."
Now showing items 1-14 of 14
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A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics
Autran, J.L.; Munteanu, D.; Bescond, M.; Houssa, Michel; Said, A. (2005) -
Defect generation in ultrathin SiON/ZrO2 gate dielectric stacks
Houssa, M.; Autran, J.L.; Afanasiev, Valeri; Stesmans, Andre; Heyns, Marc (2002) -
Detrimental impact of hydrogen on negative bias temperature instabilities in HfO2-based pMOSFETs
Houssa, Michel; De Gendt, Stefan; Autran, J.L.; Groeseneken, Guido; Heyns, Marc (2004) -
Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
Houssa, Michel; De Jaeger, Brice; Delabie, Annelies; Van Elshocht, Sven; Afanasiev, Valeri; Autran, J.L.; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2004) -
Electrical characteristics of Ge/GeOx(N)/HfO2 gate stacks
Houssa, Michel; De Jaeger, Brice; Delabie, Annelies; Van Elshocht, Sven; Afanasiev, Valeri; Autran, J.L.; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2005) -
Electrical characterization, modelling and simulation of MOS structures with high-k gate stacks
Autran, J.L.; Munteanu, D.; Houssa, Michel (2003) -
Electrical modeling and simulation of nanoscale MOS devices with a high-permittivity dielectric gate stack
Autran, J.L.; Munteanu, D.; Houssa, Michel; Bescond, M.; Garros, X.; Leroux, C. (2004) -
Electron transport through high-k dielectric barriers: A non-equilibrium Green's function (NEGF) study
Munteanu, D.; Autran, J.L.; Moreau, M.; Houssa, Michel (2009) -
Ge deep sub-micron pFETs with etched TaN metal gate on a High-K dielectric, fabricated in a 200mm silicon prototyping line
De Jaeger, Brice; Houssa, Michel; Satta, Alessandra; Kubicek, Stefan; Verheyen, Peter; Van Steenbergen, Jan; Croon, Jeroen; Kaczer, Ben; Van Elshocht, Sven; Delabie, Annelies; Kunnen, Eddy; Sleeckx, Erik; Teerlinck, Ivo; Lindsay, Richard; Schram, Tom; Chiarella, Thomas; Degraeve, Robin; Conard, Thierry; Poortmans, Jef; Winderickx, Gillis; Boullart, Werner; Schaekers, Marc; Mertens, Paul; Caymax, Matty; Vandervorst, Wilfried; Van Moorhem, Els; Biesemans, Serge; De Meyer, Kristin; Ragnarsson, Lars-Ake; Lee, S.; Kota, G.; Raskin, G.; Mijlemans, P.; Autran, J.L.; Afanas'ev, V.; Stesmans, A.; Meuris, Marc; Heyns, Marc (2004) -
Impact of high-k gate dielectrics on decananometer double-gate MOSFETs: gate-fringing field and parasitic charge effects
Munteanu, D.; Autran, J.L.; Bescond, M.; Houssa, Michel (2004) -
Model for defect generation at the (100) Si/SiO2 interface during electron injection in MOS structures
Houssa, Michel; Autran, J.L.; Heyns, Marc; Stesmans, Andre (2003) -
Model for interface defect and positive charge generation in ultrathin SiO2/ZrO2 gate dielectric stacks
Houssa, M.; Autran, J.L.; Stesmans, Andre; Heyns, Marc (2002) -
Role of hydrogen on negative bias temperature instability in HfO2-based hole channel field-effect transistors
Houssa, Michel; De Gendt, Stefan; Autran, J.L.; Groeseneken, Guido; Heyns, Marc (2004) -
Simulations of bias temperature instabilities in p-MOSFETs with HfySiOx-based gate dielectrics
Houssa, Michel; Bizzari, C.; Autran, J.L. (2004)