Browsing by author "Nafria, M."

Aging mechanisms in strained Si/high-k based pMOS transistors. Implications in CMOS circuits

Martin-Martinez, J.; Amat, E.; Ayala, N.; Bargallo Gonzalez, Mireia; Verheyen, Peter; Rodriguez, R.; Nafria, M.; Aymerich, X.; Simoen, Eddy (2011)

Breakdown spots on ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM

Blasco, X.; Nafria, M.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005)

C-AFM Characterization of the dependance of AlHfOx electrical behaviour on post deposition annealing temperature

Blasco, X.; Petry, Jasmine; Nafria, M.; Aymerich, X.; Vandervorst, Wilfried (2003)

Channel hot-carrier degradation on strained MOSFETs with embedded SiGe or SiC source/drain

Amat, E.; Rodriguez, R.; Gonzalez, Mario; Martin-Martinez, J.; Nafria, M.; Aymerich, X.; Machkaoutsan, Vladimir; Bauer, M.; Verheyen, Peter; Simoen, Eddy (2010)

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs

Ayala, N.; Martin-Martinez, J.; Rodriguez, R.; Gonzalez, M.B.; Nafria, M.; Aymerich, X.; Simoen, Eddy (2012)

CHC degradation of strained devices based on SiON and high-k gate dielectric materials

Amat, E.; Rodriguez, R.; Bargallo Gonzalez, Mireia; Martin-Martinez, J.; Nafria, M.; Aymerich, X.; Verheyen, Peter; Simoen, Eddy (2011)

Comparison of SiO2 and HfO2/SiO2 gate stacks electrical behaviour at a nanometre scale

Blasco, Xavier; Nafria, M.; Aymerich, X.; Vandervorst, Wilfried (2005)

Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

Polspoel, Wouter; Vandervorst, Wilfried; Aguilera, L.; Porti, M.; Nafria, M.; Aymerich, X. (2009)

Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope

Blasco, X.; Porti, M.; Nafria, M.; Petry, Jasmine; Vandervorst, Wilfried (2005)

GAFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature

Blasco, X.; Petry, Jasmine; Nafria, M.; Aymerich, X.; Richard, Olivier; Vandervorst, Wilfried (2004)

Nanoscale electrical characterization of HfO2/SiO2/MOS gate stackx with enhanced-CAFM

Nafria, M.; Blasco, X.; Porti, M.; Aguilera, L.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005)

Nanoscale post-breakdown conduction of HfO2/SiO2 MOS gate stacks studied by enhanced-CAFM

Blasco, X.; Nafria, M.; Aymerich, X.; Petry, Jasmine; Vandervorst, Wilfried (2005)

NBTI related time-dependent variability of mobility and threshold voltage in pMOSFETs and their impact on circuit performance

Ayala, N.; Martin-Martinez, J.; Amat, E.; Bargallo Gonzalez, Mireia; Verheyen, Peter; Rodriguez, R.; Nafria, M.; Simoen, Eddy (2011)

Processing dependences of channel hot-carrier degradation on strained-S- p-channel metal-oxide semiconductor field-effect transistors

Amat, E.; Martin-Martinez, J.; Bargallo Gonzalez, Mireia; Rodriguez, R.; Nafria, M.; Aymerich, X.; Verheyen, Peter; Simoen, Eddy (2011)

Resistive switching-like behaviour of the dielectric breakdown in ultra-thin Hf based gate stacks in mosfets

Crespo-yepes, A.; Martin-Martinez, J.; Rodriguez, R.; Nafria, M.; Aymerich, X.; Rothschild, Aude (2010)

SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors

Martin-Martinez, J.; Amat, E.; Gonzalez, Mario; Verheyen, Peter; Rooyackers, Rita; Rodriguez, R.; Nafria, M.; Aymerich, X.; Simoen, Eddy (2010)