Browsing by author "Profijt, Harald"
Now showing items 1-11 of 11
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Advanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning
Profijt, Harald; Rosseel, Erik; Tolle, John; Weeks, K.D.; Loo, Roger; Mehta, Sandeep; Maes, Jan (2014-11) -
Catalyst assisted low temperature pre epitaxial cleaning for Si and SiGe surfaces
Dhayalan, Sathish Kumar; Loo, Roger; Hikavyy, Andriy; Rosseel, Erik; Wostyn, Kurt; Kenis, Karine; Shimura, Yosuke; Profijt, Harald; Maes, Jan; Douhard, Bastien; Vandervorst, Wilfried (2015) -
Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan; Mehta, Sandeep; Loo, Roger (2014-10) -
Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Rosseel, Erik; Profijt, Harald; Hikavyy, Andriy; Tolle, John; Kubicek, Stefan; Mannaert, Geert; L'abbe, Caroline; Wostyn, Kurt; Horiguchi, Naoto; Clarysse, Trudo; Parmentier, Brigitte; Dhayalan, Sathish Kumar; Bender, Hugo; Maes, Jan Willem; Loo, Roger (2014-10) -
Fundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD epitaxy
Margetis, Joe; Mosleh, Aboozar; Ghetmiri, Seyed Amir; Al-Kabi, Sattar; Dou, Wei; Du, Wei; Bhargava, Nupur; Yu, Shui-Qing; Profijt, Harald; Kohen, David; Loo, Roger; Vohra, Anurag; Tolle, John (2017) -
Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor
Margetis, Joe; Mosleh, Aboozar; Ghetmiri, Seyed Amir; Bhargava, Nupur; Yu, Shui-Qing; Profijt, Harald; Kohen, David; Loo, Roger; Vohra, Anurag; Tolle, John (2016-05) -
HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth
Wostyn, Kurt; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Douhard, Bastien; Moussa, Alain; Rondas, Dirk; Kenis, Karine; Mertens, Paul; Holsteyns, Frank; De Gendt, Stefan; Profijt, Harald (2014) -
Low temperature pre-epi Treatment: critical parameters to control interface contamination
Hikavyy, Andriy; Loo, Roger; Dhayalan, Sathish Kumar; Wostyn, Kurt; Rosseel, Erik; Simoen, Eddy; Machkaoutsan, Vladimir; Profijt, Harald; Tolle, John (2013) -
Low-temperature pre-epitaxy surface cleaning of Si and SiGe
Profijt, Harald; Suhard, Samuel; Rosseel, Erik; Tolle, John; Mertens, Hans; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Weeks, Doran; Holsteyns, Frank; Loo, Roger; Mehta, Sandeep; Maes, Jan (2015-05) -
Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
Rosseel, Erik; dhayalan,; Hikavyy, Andriy; Loo, Roger; Profijt, Harald; Kohen, David; Kubicek, Stefan; Chiarella, Thomas; Yu, Hao; Horiguchi, Naoto; Mocuta, Dan; Barla, Kathy; Thean, Aaron; Bartlett, Gregory; Margetis, Joe; Bhargava, Nupur; Tolle, John (2016) -
Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
Rosseel, Erik; Dhayalan, Sathish Kumar; Hikavyy, Andriy; Loo, Roger; Profijt, Harald; Kohen, David; Kubicek, Stefan; Chiarella, Thomas; Yu, Hao; Horiguchi, Naoto; Mocuta, Dan; Barla, Kathy; Thean, Aaron; Bartlett, Greg; Margetis, Joe; Bhargava, Naipur; Tolle, John (2016)