Browsing by author "Gencarelli, Federica"
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Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
Gencarelli, Federica; Shimura, Yosuke; Kumar, Arul; Vincent, Benjamin; Moussa, Alain; Vanhaeren, Danielle; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Caymax, Matty; Loo, Roger; Heyns, Marc (2015) -
Analysis of the time-dependent electrical current in reverse-biased p-GeSn/n-Ge mesa diodes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Loo, Roger; Simoen, Eddy; Nguyen, Duy (2015-09) -
Application of atom probe tomography to epitaxial layers
Kumar, Arul; Gilbert, Matthieu; Kambham, Ajay Kumar; Gencarelli, Federica; Loo, Roger; Vandervorst, Wilfried (2013) -
Atomic insight of Ge(1-x)Sn(x) using atom probe tomography
Kumar, Arul; Gencarelli, Federica; Vincent, Benjamin; Kambham, Ajay Kumar; Gilbert, Matthieu; Vandervorst, Wilfried (2012) -
Band alignment at interfaces of amorphous Al2O3 with Ge1-xSnx-strained Ge-based channels
Chou, H.-Y; Afanas'ev, Valeri; Houssa, Michel; Stesmans, Andre; Vincent, Benjamin; Gencarelli, Federica; Shimura, Yosuke; Merckling, Clement; Loo, Roger; Nakatsuka, Osamu; Zaima, Shigeaki (2014) -
Bandgap measurement by spectroscopic ellipsometry for strained Ge 1-x Sn x
Shimura, Yosuke; Wang, Wei; Nieddu, Thomas; Gencarelli, Federica; Vincent, Benjamin; Laha, Priya; Terryn, Herman; Stefanov, Stefan; Chiussi, Stefano; Van Campenhout, Joris; Nguyen, Ngoc Duy; Vantomme, Andre; Loo, Roger (2013-06) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Characterization of Al/Ti and NiGe ohmic contacts to n-type GeSn CVD-grown layers
Firrincieli, Andrea; Gupta, Suyog; Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Simoen, Eddy; Vandervorst, Wilfried; Claeys, Cor; Saraswat, K.; Kittl, Jorge (2012) -
Composition and thickness dependence of GeSn growth by chemical vapor deposition
Wang, Wei; Shimura, Yosuke; Nieddu, Thomas; Gencarelli, Federica; Nguyen, Duy; Vandervorst, Wilfried; Loo, Roger (2013-06) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2012) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Kumar, Arul; Demeulemeester, Jelle; Vantomme, Andre; Franquet, Alexis; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2012) -
Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Gencarelli, Federica; Vincent, Benjamin; Demeulemeester, Jelle; Vantomme, Andre; Moussa, Alain; Franquet, Alexis; Kumar, Arul; Bender, Hugo; Meersschaut, Johan; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Temst, Kristiaan; Heyns, Marc (2013) -
Current transients in reverse-biased p-GeSn/n-Ge diodes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Shimura, Yosuke; Loo, Roger; Simoen, Eddy; Nguyen, Ngoc Duy (2015) -
CVD epitaxial growth of GeSn opens a new route for advanced Sn-based logic and photonics devices
Vincent, Benjamin; Gencarelli, Federica; Kumar, Arul; Vantomme, Andre; Merckling, Clement; Lin, Dennis; Afanasiev, Valeri; Eneman, Geert; Clarysse, Trudo; Firrincieli, Andrea; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Deep-level transient spectroscopy of MOS capacitors on GeSn epitaxial layers
Simoen, Eddy; Vincent, Benjamin; Merckling, Clement; Gencarelli, Federica; Chu, L-K; Loo, Roger (2012) -
Electrical activity of threading dislocations and defect complexes in GeSn epitaxial layers
Gupta, Somya; Simoen, Eddy; Asano, Takanori; Nakatsuka, Osamu; Gencarelli, Federica; Shimura, Yosuke; Moussa, Alain; Loo, Roger; Zaima, Shigeaki; Nguyen, Ngoc Duy; Heyns, Marc (2013) -
Electrical characterization of p-GeSn/n-Ge diodes with interface traps under dc and ac regimes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Loo, Roger; Simoen, Eddy; Nguyen, Duy (2015) -
Electrical characterization of pGeSn/nGe diodes
Baert, Bruno; Gupta, Somya; Gencarelli, Federica; Loo, Roger; Simoen, Eddy; Nguyen, Duy Ngoc (2014-06)