Browsing by author "Porret, Clément"

12-EUV layer Surrounding Gate Transistor (SGT) for vertical 6-T SRAM: 5-nm-class technology for ultra-density logic devices

Kim, Min-Soo; Harada, N.; Kikuchi, Yoshiaki; Boemmels, Juergen; Mitard, Jerome; Huynh Bao, Trong; Matagne, Philippe; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Lorant, Christophe; Sebaai, Farid; Porret, Clément; Rosseel, Erik; Dangol, Anish; Batuk, Dmitry; Martinez Alanis, Gerardo Tadeo; Geypen, Jef; Jourdan, Nicolas; Sepulveda Marquez, Alfonso; Puliyalil, Harinarayanan; Jamieson, Geraldine; van der Veen, Marleen; Teugels, Lieve; El-Mekki, Zaid; Altamirano Sanchez, Efrain; Li, Y.; Nakamura, H.; Mocuta, Dan; Matsuoka, F. (2019)

60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption modulator

Srinivasan, Ashwyn; Porret, Clément; Balakrishnan, Sadhishkumar; Ban, Yoojin; Loo, Roger; Verheyen, Peter; Van Campenhout, Joris; Pantouvaki, Marianna (2021)

A new method to fabricate Ge nanowires: selective lateral etching of GeSn:P-Ge multi-stacks

Porret, Clément; Vohra, Anurag; Sebaai, Farid; Douhard, Bastien; Hikavyy, Andriy; Loo, Roger (2018)

Ab initio analysis of defect formation and dopant activation in P and As co-doped Si

Nakazaki, Nobuya; Rosseel, Erik; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Horiguchi, Naoto; Pourtois, Geoffrey (2019)

Advanced germanium devices for optical interconnects

Srinivasan, Ashwyn; Porret, Clément; Shimura, Yosuke; Vissers, Ewoud; Geiregat, Pieter; Loo, Roger; Pantouvaki, Marianna; Van Campenhout, Joris; Van Thourhout, Dries (2018)

Advantage of NW structure in preservation of SRB-induced strain and investigation of off-state leakage in strained stacked Ge NW pFET

Arimura, Hiroaki; Eneman, Geert; Capogreco, Elena; Witters, Liesbeth; De Keersgieter, An; Favia, Paola; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Bender, Hugo; Ragnarsson, Lars-Ake; Mitard, Jerome; Collaert, Nadine; Mocuta, Dan; Horiguchi, Naoto (2018)

Analysis of homogeneous broadening in n-type doped Ge layers on Si for laser application

Srinivasan, Ashwyn; Porret, Clément; Pantouvaki, Marianna; Shimura, Yosuke; Gieregat, Pieter; Loo, Roger; Van Campenhout, Joris; Van Thourhout, Dries (2017)

Application of Cl2 for low temperature etch and epitaxy

Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Loo, Roger (2018)

Application of Cl2 for low temperature etch and epitaxy

Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Milenin, Alexey; Loo, Roger (2019)

Application of group IV epitaxy in the advanced CMOS fabrication

Hikavyy, Andriy; Porret, Clément; Rosseel, Erik; Vohra, Anurag; Loo, Roger (2018)

Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling constrast imaging

Schulze, Andreas; Han, Han; Strakos, Libor; Vystavel, Tomas; Porret, Clément; Loo, Roger; Caymax, Matty (2018)

Ascertaining the nature and distribution of extended crystalline defects in emerging semiconductor materials using electron channeling contrast imaging

Schulze, Andreas; Han, Han; Strykos, Libor; Vystavel, Thomas; Porret, Clément; Loo, Roger; Caymax, Matty (2018)

Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

Abrenica, Graniel; Lebedev, Mikhail; Fingerle, Mathias; Arnauts, Sophia; Bazzazian, Nina; Calvet, Wolfram; Porret, Clément; Bender, Hugo; Mayer, Thomas; De Gendt, Stefan; van Dorp, Dennis (2020)