Browsing by author "Garbar, N."
Now showing items 1-20 of 44
-
Back and front interface related generation-recombination noise in buried-channel SOI p-MOSFET's
Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Simoen, Eddy; Claeys, Cor (1996) -
Back-gate induced noise overshoot in partially-depleted SOI MOSFETs
Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2005) -
Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques
Lukyanchikova, N.; Garbar, N.; Kudina, V.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2007) -
Black-gate induced noise overshoot in partially-depleted SOI MOSFETs
Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2004) -
Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFETs
Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor; Lukyanchikova, N.; Garbar, N. (2004) -
Electrical characterisation of shallow cobalt-silicided junctions
Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Czerwinski, A.; Katcki, J.; Ratajczak, J.; Gaubas, Eugenijus (2000) -
Electrical characterization of shallow cobalt-silicided junctions
Simoen, Eddy; Poyai, Amporn; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Czerwinski, A.; Katcki, J.; Ratajczak, J.; Gaubas, Eugenijus (2001) -
Electron valence band tunnelling induced excess Lorentzian noise in fully depleted SOI transistors
Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor; Lukyanchikova, N.B.; Garbar, N. (2003-09) -
Evidence for a "linear kink effect" in ultra-thin gate oxide SOI MOSFETs
Mercha, Abdelkarim; Rafi, Joan Marc; Simoen, Eddy; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N. (2003) -
Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias
Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2004) -
Explaining the parameters of the electron valence-band tunneling related lorentzian noise in fully depleted SOI MOSFET's
Simoen, Eddy; Mercha, Abdelkarim; Rafi, Joan Marc; Claeys, Cor; Lukyanchikova, N.; Garbar, N. (2003) -
Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs
Simoen, Eddy; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N.; Martino, Joao Antonio; Sonnenberg, V. (1996) -
Flicker noise in deep submicron nMOS transistors
Lukyanchikova, N.; Garbar, N.; Petrichuk, M.; Simoen, Eddy; Claeys, Cor (2000) -
Flicker noise in submicron MOSFETS with 3.5 nm nitrided gate oxide
Simoen, Eddy; Da Rold, Martina; Claeys, Cor; Lukyanchikova, N.; Petrichuk, M.; Garbar, N. (2001) -
High-energy proton irradiation induced changes in the linear-kink noise overschoot of 0.10 μm partially depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors
Simoen, Eddy; Mercha, Abdelkarim; Rafi, Joan Marc; Claeys, Cor; Lukyanchikova, N.B.; Smolanka, A.M.; Garbar, N. (2004) -
Identification of isolation-edge related random telegraph signals in submicron silicon metal-oxide-semiconductor transistors
Lukyanchikova, N.; Petrichuk, M. V.; Garbar, N.; Simoen, Eddy; Claeys, Cor (1997) -
Impact of cobalt silicidation on the low-frequency noise behavior of shallow P-N junctions
Lukyanchikova, N. B.; Petrichuk, M. V.; Garbar, N.; Simoen, Eddy; Poyai, Amporn; Claeys, Cor (2000) -
Impact of the back-gate bias on the low-frequency noise of fully depleted silicon-on-insulator MOSFETs
Simoen, Eddy; Mercha, Abdelkarim; Claeys, Cor; Lukyanchikova, N.; Garbar, N. (2003) -
Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2004) -
Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages
Kudina, V.; Lukyanchikova, N.; Garbar, N.; Smolanka, A.; Simoen, Eddy; Claeys, Cor (2008)