Browsing by author "Tseng, Joshua"

6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010)

8Å Tinv gate-first dual channel technology achieving low-Vt high performance CMOS

Witters, Liesbeth; Takeoka, Shinji; Yamaguchi, Shinpei; Hikavyy, Andriy; Shamiryan, Denis; Cho, Moon Ju; Chiarella, Thomas; Ragnarsson, Lars-Ake; Loo, Roger; Kerner, Christoph; Crabbe, Yvo; Franco, Jacopo; Tseng, Joshua; Wang, Wei-E; Rohr, Erika; Schram, Tom; Richard, Olivier; Bender, Hugo; Biesemans, Serge; Absil, Philippe; Hoffmann, Thomas Y. (2010)

Enabling the high-performance InGaAs/Ge CMOS: a common gate stack solution

Lin, Dennis; Brammertz, Guy; Sioncke, Sonja; Fleischmann, Claudia; Delabie, Annelies; Martens, Koen; Bender, Hugo; Conard, Thierry; Tseng, Joshua; Lin, Vic; Wang, Wei-E; Temst, Kristiaan; Vantomme, Andre; Mitard, Jerome; Caymax, Matty; Meuris, Marc; Heyns, Marc; Hoffmann, Thomas Y. (2009)

Extending gate dielectric scaling by using ALD HfO2/SrTiO3 stacks

Maes, Jan; Machkaoutsan, Vladimir; Pierreux, Dieter; Blomberg, Tom; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Delabie, Annelies; Van Elshocht, Sven; Popovici, Mihaela Ioana; Conard, Thierry; Tseng, Joshua; Ragnarsson, Lars-Ake (2010)

Extreme scaled gate dielectrics by using ALD Hf-based composite materials

Pierreux, Dieter; Machkaoutsan, Vladimir; Tois, E.; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Van Elshocht, Sven; Tseng, Joshua; Ragnarsson, Lars-Ake; Maes, Jan (2009)

Extreme scaled gate dielectrics by using ALD HfO2/SrTiO3 composite structures

Pierreux, Dieter; Machkaoutsan, Vladimir; Tois, E.; Swerts, Johan; Schram, Tom; Adelmann, Christoph; Van Elshocht, Sven; Popovici, Mihaela Ioana; Conard, Thierry; Tseng, Joshua; Ragnarsson, Lars-Ake; Maes, Jan (2009)

Ge FETs gate stack passivation options and their scalability to low EOT

Bellenger, Florence; De Jaeger, Brice; Nyns, Laura; Zahid, Mohammed; Houssa, Michel; Vrancken, Evi; Tseng, Joshua; Caymax, Matty; Meuris, Marc; De Meyer, Kristin; Heyns, Marc; Hoffmann, Thomas Y. (2010)

High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric

Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, D.R; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2011)

High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization

Mitard, Jerome; De Jaeger, Brice; Eneman, Geert; Dobbie, Andrew; Myronov, M.; Kobayashi, Masaharu; Geypen, Jef; Bender, Hugo; Vincent, Benjamin; Krom, Raymond; Franco, Jacopo; Winderickx, Gillis; Vrancken, Evi; Vanherle, Wendy; Wang, Wei-E; Tseng, Joshua; Loo, Roger; De Meyer, Kristin; Caymax, Matty; Pantisano, Luigi; Leadley, David; Meuris, Marc; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010)

High-mobility 0.85nm-EOT Si0.45Ge0.55 pFETs: delivering high performance at scaled VDD

Mitard, Jerome; Witters, Liesbeth; Garcia Bardon, Marie; Christie, Phillip; Franco, Jacopo; Mercha, Abdelkarim; Magnone, Paolo; Crupi, Felice; Ragnarsson, Lars-Ake; Hikavyy, Andriy; Vincent, Benjamin; Chiarella, Thomas; Loo, Roger; Tseng, Joshua; Yamaguchi, Shinpei; Takeoka, Shinji; Wang, Wei-E; Absil, Philippe; Hoffmann, Thomas Y. (2010)

High-mobility Si1-xGex-channel PFETs: layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths

Eneman, Geert; Yamaguchi, Shinpei; Ortolland, Claude; Takeoka, Shinji; Witters, Liesbeth; Chiarella, Thomas; Favia, Paola; Hikavyy, Andriy; Mitard, Jerome; Kobayashi, M.; Krom, Raymond; Bender, Hugo; Tseng, Joshua; Wang, Wei-E; Vandervorst, Wilfried; Loo, Roger; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010)

Implant-free SiGe qqantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel.

Hellings, Geert; Witters, Liesbeth; Krom, Raymond; Mitard, Jerome; Hikavyy, Andriy; Loo, Roger; Schulze, Andreas; Eneman, Geert; Kerner, Christoph; Franco, Jacopo; Chiarella, Thomas; Takeoka, Shinji; Tseng, Joshua; Wang, Wei-E; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Heyns, Marc; De Meyer, Kristin; Meuris, Marc; Hoffmann, Thomas Y. (2010)

On the origin of mobility reduction in ultrathin EOT HK/MG CMOS devices: Impact from gate-stack and device architecture

Ragnarsson, Lars-Ake; Mitard, Jerome; Hong, Sug-Hun; Takeoka, Shinji; Tseng, Joshua; Wang, Wei-E; Yamaguchi, Shinpei; Trojman, Lionel; Kauerauf, Thomas; De Keersgieter, An; Schram, Tom; Rohr, Erika; Collaert, Nadine; Jurczak, Gosia; Bourdelle, Konstantin; Nguyen, B-Y; Absil, Philippe; Hoffmann, Thomas Y. (2011)

On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

Ragnarsson, Lars-Ake; Mitard, Jerome; Kauerauf, Thomas; De Keersgieter, An; Schram, Tom; Rohr, Erika; Collaert, Nadine; Jurczak, Gosia; Hong, Sug-Hun; Tseng, Joshua; Wang, Wei-E; Trojman, Lionel; Bourdelle, Konstantin; Nguyen, B-Y; Absil, Philippe; Hoffmann, Thomas Y. (2011)

Optimized ultra-low thermal budget process flow for advanced high-K / metal gate first CMOS using laser-annealing technology

Ortolland, Claude; Ragnarsson, Lars-Ake; Favia, Paola; Richard, Olivier; Kerner, Christoph; Chiarella, Thomas; Rosseel, Erik; Okuno, Yasutoshi; Akheyar, Amal; Tseng, Joshua; Everaert, Jean-Luc; Schram, Tom; Kubicek, Stefan; Aoulaiche, Marc; Cho, Moon Ju; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2009)