Browsing by author "Subirats, Alexandre"
Now showing items 1-20 of 27
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A new method for quickly evaluating reversible and permanent components of the BTI degradation
Garros, X.; Subirats, Alexandre; Reimbold, G.; Gaillard, F.; Diouf, C.; Federspiel, X.; Huard, V.; Rafik, M. (2018) -
Challenges for I/O towards the 3-nm node: Si/SiGe superlatttice I/O finFET in a horizontal nanowire technology and the increased ausceptibility of bulk finFET technology to single event latchup
Hellings, Geert; Mertens, Hans; Karp, James; Maillard, Pierre; Subirats, Alexandre; Simoen, Eddy; Schram, Tom; Ragnarsson, Lars-Ake; Simicic, Marko; Chen, Shih-Hung; Parvais, Bertrand; Boudier, D; Cretu, B; Machillot, J; Pena, V; Sun, S; Yoshida, N; Kim, N; Mocuta, Anda; Linten, Dimitri; Hart, Michael; Horiguchi, Naoto (2018) -
Channel and gate stack charge trapping investigation in vertical 3D NAND devices with poly-silicon channel
Subirats, Alexandre; Arreghini, Antonio; Breuil, Laurent; Degraeve, Robin; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory
Subirats, Alexandre; Capogreco, Elena; Degraeve, Robin; Arreghini, Antonio; Van den Bosch, Geert; Linten, Dimitri; Van Houdt, Jan; Furnemont, Arnaud (2016) -
Comparative experimental analysis of time-dependent variability using a transistor test array
Simicic, Marko; Subirats, Alexandre; Weckx, Pieter; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Linten, Dimitri; Thean, Aaron; Groeseneken, Guido; Gielen, Georges (2016) -
COMPHY - A compact-physics framework for unified modeling of BTI
Rzepa, Gerhard; Franco, Jacopo; O'Sullivan, Barry; Subirats, Alexandre; Simicic, Marko; Hellings, Geert; Weckx, Pieter; Jech, M.; Knobloch, T.; Waltl, M.; Roussel, Philippe; Linten, Dimitri; Kaczer, Ben; Grasser, T. (2018) -
Defect-centric perspective of combined BTI and RTN time-dependent variability
Weckx, Pieter; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Bury, Erik; Subirats, Alexandre; Groeseneken, Guido; Catthoor, Francky; Linten, Dimitri; Raghavan, Praveen; Thean, Aaron (2015) -
Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel
Hellings, Geert; Subirats, Alexandre; Franco, Jacopo; Schram, Tom; Ragnarsson, Lars-Ake; Witters, Liesbeth; Roussel, Philippe; Linten, Dimitri; Horiguchi, Naoto; Boschke, Roman (2017) -
Efficient physical defect model applied to PBTI in high-k stacks
Rzepa, G.; Franco, Jacopo; Subirats, Alexandre; Jech, M.; Vaisman Chasin, Adrian; Grill, A.; Waltl, M.; Knobloch, T.; Stampfer, B.; Chiarella, Thomas; Horiguchi, Naoto; Ragnarsson, Lars-Ake; Linten, Dimitri; Grasser, T.; Kaczer, Ben (2017) -
Electrical characterization of BEOL plasma-induced damage in bulk FinFET technology
Hiblot, Gaspard; Subirats, Alexandre; Liu, Yefan; Van der Plas, Geert (2019) -
Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
Subirats, Alexandre; Arreghini, Antonio; Capogreco, Elena; Delhougne, Romain; Tan, Chi Lim; Hikavyy, Andriy; Breuil, Laurent; Degraeve, Robin; Putcha, Vamsi; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory
Capogreco, Elena; Subirats, Alexandre; Lisoni, Judit Gloria; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Tan, Chi Lim; Delhougne, Romain; Van den Bosch, Geert; De Meyer, Kristin; Furnemont, Arnaud; Van Houdt, Jan (2017) -
First demonstration of SiGe channel in Macaroni geometry for future 3D NAND devices
Arreghini, Antonio; Delhougne, Romain; Subirats, Alexandre; Hikavyy, Andriy; Van den Bosch, Geert; Furnemont, Arnaud (2017) -
Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: demonstration of a suitable gate stack for top and bottom tier nMOS
Franco, Jacopo; Witters, Liesbeth; Vandooren, Anne; Arimura, Hiroaki; Sioncke, Sonja; Putcha, Vamsi; Vais, Abhitosh; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Subirats, Alexandre; Vaisman Chasin, Adrian; Ragnarsson, Lars-Ake; Kaczer, Ben; Linten, Dimitri; Collaert, Nadine (2017) -
Hot-carrier analysis on nMOS Si finFETs with solid source doped junctions
Vaisman Chasin, Adrian; Franco, Jacopo; Ritzenthaler, Romain; Hellings, Geert; Cho, Moon Ju; Sasaki, Yuichiro; Subirats, Alexandre; Roussel, Philippe; Kaczer, Ben; Linten, Dimitri; Horiguchi, Naoto; Groeseneken, Guido; Thean, Aaron (2016) -
Impact of discrete trapping in high pressure deuterium annealed and doped poly-Si channel 3D NAND macaroni
Subirats, Alexandre; Arreghini, Antonio; Breuil, Laurent; Degraeve, Robin; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Impact of SiON tunnel layer composition on 3D NAND cell performance
Breuil, Laurent; Nyns, Laura; Banerjee, Kaustuv; Vadakupudhu Palayam, Senthil; Subirats, Alexandre; Richard, Olivier; Conard, Thierry; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
Impact of the electronic band structure on the reliability of triple Layer a-VMCO devices
Belmonte, Attilio; Govoreanu, Bogdan; Subirats, Alexandre; Di Piazza, Luca; Goux, Ludovic; Kar, Gouri Sankar (2017) -
In depth analysis of post-program VT instability after electrical stress in 3D SONOS memories
Subirats, Alexandre; Arreghini, Antonio; Van den Bosch, Geert; Degraeve, Robin; Linten, Dimitri; Furnemont, Arnaud (2016-05) -
Investigation of the endurance of FE-HfO2 devices by means of TDDB studies
Florent, Karine; Subirats, Alexandre; Lavizzari, Simone; Degraeve, Robin; Celano, Umberto; Kaczer, Ben; Di Piazza, Luca; Popovici, Mihaela Ioana; Groeseneken, Guido; Van Houdt, Jan (2018)