Browsing by author "Morris, Richard"

3D imaging of atom probe tip shapes with atomic force microscopy

Fleischmann, Claudia; Paredis, Kristof; Melkonyan, Davit; Op de Beeck, Jonathan; Bogdanowicz, Janusz; Morris, Richard; Cuduvally, Ramya; Vandervorst, Wilfried (2018)

A critical view on the accuracy of dopant profiling in atom probe tomography: The case of boron in silicon

Melkonyan, Davit; Fleischmann, Claudia; Bogdanowicz, Janusz; Morris, Richard; Cuduvally, Ramya; Vandervorst, Wilfried (2018)

A scheme to correct for inaccuracies in the compositional analysis of SixGe1-x by Atom Probe Tomography

Dialameh, Masoud; Scheerder, Jeroen; Morris, Richard; Meersschaut, Johan; Richard, Olivier; Vandervorst, Wilfried; van der Heide, Paul; Fleischmann, Claudia (2021)

Accuracy in APT analysis: The case of boron in silicon

Melkonyan, Davit; Fleischmann, Claudia; Bogdanowicz, Janusz; Morris, Richard; Vandervorst, Wilfried (2017)

Accurate stoichiometric analysis of Al1 xGaxN/GaN structures using APT and the influence of laser, poles and zone lines

Morris, Richard; Arnoldi, Laurent; Cuduvally, Ramya; Melkonyan, Davit; Fleischmann, Claudia; Zhao, Ming; Vandervorst, Wilfried (2017)

An O2+ probe energy study for boron quantification in Si1 xGex (0 <= x <= 1) using secondary ion mass spectrometry

Morris, Richard (2016)

An Origin behind Rashba spin splitting within inverted doped sGe heterostructures

Hassan, Amna; Morris, Richard; Mironov, Oleg; Gabani, Slavomir; Dobbie, Andy; Leadley, David (2017)

Analysis of III-nitride device heterostructures using APT

Morris, Richard; Cuduvally, Ramya; Zhao, Ming; van der Heide, Paul; Vandervorst, Wilfried (2018)

Atom probe conditions for stoichiometric quantification of GaN and Al1 xGaxN

Morris, Richard; Arnoldi, Laurent; Cuduvally, Ramya; Melkonyan, Davit; Fleischmann, Claudia; Zhao, Ming; Vandervorst, Wilfried (2017)

Atom probe of GaN/AlGaN heterostructures: the role of electric field, sample crystallography and laser excitation on quantification

Morris, Richard; Cuduvally, Ramya; Melkonyan, Davit; Zhao, Ming; van der Heide, Paul; Vandervorst, Wilfried (2019)

Atom probe tomography for advanced semiconductor technology research

Fleischmann, Claudia; Melkonyan, Davit; Arnoldi, Laurent; Morris, Richard; Bogdanowicz, Janusz; Vandervorst, Wilfried (2017)

Atom probe tomography on contemporary semiconductor devices: Challenges in data acquisition, quantification and spatial accuracy

Scheerder, Jeroen; Fleischmann, Claudia; Dialameh, Masoud; Melkonyan, Davit; Morris, Richard; Vandervorst, Wilfried; van der Heide, Paul (2019)

B and Ga Co-Doped Si1-xGex for p-Type Source/Drain Contacts

Rengo, Gianluca; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Ayyad, Mustafa; Morris, Richard; Khazaka, Rami; Loo, Roger; Vantomme, Andre (2022)

Correcting the boron concentration for the detection losses through multi hit events.

Melkonyan, Davit; Fleischmann, Claudia; Bogdanowicz, Janusz; Morris, Richard; Cuduvally, Ramya; Vandervorst, Wilfried (2018)

Effect of Strain on the Epitaxy of B-Doped Si0.5Ge0.5 Source/Drain Layers

Rengo, Gianluca; Porret, Clément; Hikavyy, Andriy; Rosseel, Erik; Ayyad, Mustafa; Morris, Richard; Pourtois, Geoffrey; Loo, Roger; Vantomme, André (2021)

Exploiting energy sequencing of low energy SIMS to determine intrinsic chemical profiles with sub-nm precision

Morris, Richard; Hase, Thomas (2018)

Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN

Morris, Richard; Cuduvally, Ramya; Lin, Jhao-Rong; Zhao, Ming; Vandervorst, Wilfried; Thuvander, Mattias; Fleischmann, Claudia (2022-11)