Browsing by author "Folkersma, Steven"

Apparent size effects on dopant activation in nanometer-wide Si fins

Folkersma, Steven; Bogdanowicz, Janusz; Favia, Paola; Wouters, Lennaert; Petersen, Dirch Hjorth; Hansen, Ole; Henrichsen, Henrik Hartmann; Nielsen, Peter Former; Shiv, Lior; Vandervorst, Wilfried (2021)

Electrical characterization of single nanometer-wide Si fins in dense arrays

Folkersma, Steven; Bogdanowicz, Janusz; Schulze, Andreas; Favia, Paola; Dirch, Petersen; Ole, Hansen; Henrik, Henrichsen; Nielsen, Peter; Shiv, Lior; Vandervorst, Wilfried (2018)

Electrical resistance measurements of individual nanometer-wide Si fins

Folkersma, Steven; Bogdanowicz, Janusz; Schulze, Andreas; Petersen, D.H.; Hansen, O.; Henrichsen, H.; Nielsen, P.F.; Vandervorst, Wilfried (2017)

Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices

Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2019)

Ge:B and GeSn:B low temperature selective epitaxial growth schemes for source/drain layers in Ge pMOS devices

Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2018)

Hedgehog probe tips enabling high-resolution scanning probe microscopy

Boehme, Thijs; Hantschel, Thomas; Wouters, Lennaert; Folkersma, Steven; Paredis, Kristof; Vandervorst, Wilfried (2019)

In-line sheet resistance measurements of nanometer-wide semiconducting fins

Bogdanowicz, Janusz; Folkersma, Steven; Schulze, Andreas; Moussa, Alain; Merckling, Clement; Kunert, Bernardette; Guo, Weiming; Petersen, Dirch; Witthoft, Maria-Louise; Hansen, Ole; Henrichsen, Henrik; Nielsen, Peter; Vandervorst, Wilfried (2017)

Low temperature Ge:B and GeSn:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide & nitride with no need for any post-epi activation treatment

Vohra, Anurag; Porret, Clément; Kohen, David; Folkersma, Steven; Bogdanowicz, Janusz; Schaekers, Marc; Tolle, John; Hikavyy, Andriy; Capogreco, Elena; Witters, Liesbeth; Langer, Robert; Vandervorst, Wilfried; Loo, Roger (2019-03)

Mobility and carrier concentration measurements on nm-wide semiconductor fins

Witthoft, M.-L.; Folkersma, Steven; Bogdanowicz, Janusz; Marangoni, T.; Vohra, Anurag; Porret, Clément; Loo, Roger; Henrichsen, H.H.; Hansen, O.; Vandervorst, Wilfried; Petersen, D.H. (2018-06)

Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled hour-glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

Goux, Ludovic; Belmonte, Attilio; Celano, Umberto; Woo, Jiyong; Folkersma, Steven; Chen, Michael; Redolfi, Augusto; Fantini, Andrea; Degraeve, Robin; Clima, Sergiu; Vandervorst, Wilfried; Jurczak, Gosia (2016)

Reverse tip sample scanning for precise and high-throughput electrical characterization of advanced nodes

Celano, Umberto; Hantschel, Thomas; Boehme, Thijs; Kanniainen, A.; Wouters, Lennaert; Bender, Hugo; Bosman, Niels; Drijbooms, Chris; Folkersma, Steven; Paredis, Kristof; Vandervorst, Wilfried; van der Heide, Paul (2019)

Sheet-resistance measurements in nanometer-wide conductive lines

Bogdanowicz, Janusz; Folkersma, Steven; Sergeant, Stefanie; Schulze, Andreas; Paredis, Kristof; Celano, Umberto; Kunert, Bernardette; Guo, Weiming; Mols, Yves; Petersen, Dirch; Witthoft, Maria-Louise; Hansen, Ole; Henrichsen, Henrik; Nielsen, Pieter; Vandervorst, Wilfried (2017)