Browsing by author "Rafi, J.M."
Now showing items 1-20 of 35
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A DLTS study on plasma-hydrogenated n-type high-resistivity MCz silicon
Huang, J.L.; Simoen, Eddy; Claeys, Cor; Rafi, J.M.; Clauws, P. (2007) -
Body potential analysis of ultra thin gate oxide FD-SOI MOSFETs in accumulation mode operation
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Carrier lifetime analysis in thin gate oxide FD-SOI n-MOSFETs by gate-induced drain current tranients
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2008) -
Carrier lifetime studies in diode structures on Si substrates with and without Ge doping
Uleckas, A.; Gaubas, E.; Rafi, J.M.; Chen, J.; Yang, D.; Ohyama, H.; Simoen, Eddy; Vanhellemont, J. (2011) -
Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates
Ohyama, H.; Rafi, J.M.; Campabadal, F.; Takakura, K.; Simoen, Eddy; Chen, J.; Vanhellemont, J. (2009) -
Degradation of drain current hysteresis in electron-irradiated FD-SOI MOSFETs in accumulation mode operation
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
Hayama, K.; Takakura, K.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor; Rafi, J.M.; Kokkoris, M. (2004) -
Degradation of high resistivity silicon float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
Rafi, J.M.; Boulord, C.; Hayama, K.; Ohyama, H.; Campabadal, F.; Pellegrini, G.; Lozano, M.; Simoen, Eddy; Claeys, Cor (2008) -
Degradation of high-resistivity float zone and magnetic Czochralski n-type silicon detectors subjected to 2-MeV electron irradiation
Rafi, J.M.; Boulord, C.; Hayama, K.; Ohyama, H.; Campabadal, F.; Pellegrini, G.; Lozano, M.; Simoen, Eddy; Claeys, Cor (2009) -
Degradation of the electrical performance and floating body effects in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Matsuyama, K.; Hayama, K.; Takakura, K.; Yoneoka, M.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Degradation of the electrical performance and floating body efffects in ultra thin gate oxide FD-SOI nMOSFETs by 2-MeV electron irradiation
Hayama, K.; Rafi, J.M.; Takakura, K.; Ohyama, H.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor; Kuboyama, S.; Oka, K.; Matsuda, S. (2004) -
Difference of 2-MeV electron-irradiation-induced performance degradation in FD-SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation
Hayama, K.; Takakura, K.; Yoneoka, M.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2007) -
Effect of high-temperature electron irradiation in thin gate oxide FD-SOI n-MOSFETs
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2005) -
Effective lifetime of minority carriers in silicon: the role of heat- and hydrogen plasma treatments
Ulyashin, A.; Simoen, Eddy; Carnel, Lodewijk; De Wolf, Stefaan; Dekkers, Harold; Rafi, J.M.; Beaucarne, Guy; Poortmans, Jef; Claeys, Cor (2004) -
Effects of irradiation induced lattice defects on standard trench and fine pattern trench IGBT characteristics
Nakabayashi, M.; Ohyama, H.; Kaneko, T.; Hanano, K.; Rafi, J.M.; Simoen, Eddy; Claeys, Cor (2009) -
Electrical and opical characterization of thin semiconductor layers for advanced ULSI devices
Simoen, Eddy; Claeys, Cor; Gaubas, E.; Rafi, J.M. (2005) -
Electrical stress on irradiated thin gate oxide partially depleted SOI nMOSFETs
Rafi, J.M.; Simoen, Eddy; Mercha, Abdelkarim; Hayama, K.; Campabadal, F.; Ohyama, H.; Claeys, Cor (2007) -
Enhancement of "linear kink effect" in fully depleted SOI n-MOSFETs at liquid nitrogen temperature
Hayama, K.; Takakura, K.; Ohyama, H.; Rafi, J.M.; Mercha, Abdelkarim; Simoen, Eddy; Claeys, Cor (2004) -
Evaluation of surface passivation layers for bulk lifetime estimation of high resistivity silicon for radiation detectors
Rafi, J.M.; Cardona-Safont, L.; Zabala, M.; Boulord, C.; Campabadal, F.; Pellegrini, G.; Lozano, M.; Simoen, Eddy; Claeys, Cor (2008)