Browsing by author "Fleetwood, Daniel"
Now showing items 1-9 of 9
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Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
Jiang, Rong; Zhang, En Xia; Liao, Wenjun; Liang, Chundong; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Linten, Dimitri; Mitard, Jerome; Collaert, Nadine; Sioncke, Sonja; Waldron, Niamh (2018) -
Effects of negative-bias-temperature-instability on low-frequency noise in SiGe p MOSFETs
Duan, Guo Xing; Hachtel, Jordan; Zhang, En Xia; Zhang, Cher Xuan; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Mitard, Jerome; Linten, Dimitri; Witters, Liesbeth; Collaert, Nadine; Mocuta, Anda; Chisholm, Matthew; Pantelides, Sokrates (2016) -
Electrical effect of a single extended defect in MOSFETs: a simulation study
Ni, Kai; Eneman, Geert; Simoen, Eddy; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; Schrimpf, Ronald; Reed, Robert; Fleetwood, Daniel (2016) -
Gate bias and length dependences of total-ionizing-dose effects in InGaAs FinFETs on bulk Si
Zhao, Simeng; jiang, Rong; Wang, Pang; Zhang, En Xia; Waldron, Niamh; Kunert, Bernadette; Mitard, Jerome; Collaert, Nadine; Soncke, Sonja; Linten, Dimitri; Schrimpf, Ronald; Reed, Robert; Fleetwood, Daniel (2018-09) -
Impacts of through-silicon vias on total-ionizing-dose effects and low-frequency noise in FinFETs
Li, Kan; Zhang, Enxia; Gorchichko, Mariia; Wang, Pengfei; Hiblot, Gaspard; Jourdain, Anne; Van Huylenbroeck, Stefaan; Reed, Robert; Fleetwood, Daniel; Schrimpf, Ronald (2020) -
Interface and border traps in Ge pMOSFETs
Fleetwood, Daniel; Simoen, Eddy; Francis, Sarah; Zhang, C.X.; Arora, R.; Zhang, E.X.; Schrimpf, Ronald; Galloway, Ken; Mitard, Jerome; Claeys, Cor (2012) -
Radiation effects in advanced multiple-gate and silicon-on-insulator transistors
Simoen, Eddy; Gaillardin, Marc; Paillet, Philippe; Reed, Robert; Schrimpf, Ron; Alles, Michael; El-Mamouni, Farah; Fleetwood, Daniel; Griffoni, Alessio; Claeys, Cor (2013) -
Total ionizing dose effects on strained Ge pMOS FinFETs on bulk Si
Mitard, Jerome; Zhang, En Xia; Fleetwood, Daniel; Hachtel, Jordan; Liang, Chundong; Reed, Robert; Alles, Michael; Schrimpf, Ronald; Linten, Dimitri; Witters, Liesbeth; Collaert, Nadine; Thean, Aaron; Chisholm, Matthew; Pantelides, Sokrates (2016-07) -
X-Ray and proton radiation effects on 40 nm CMOS physically unclonable function devices
Wang, Pengfei; Zhang, Enxia; Chuang, Kent; Liao, Wenjun; Gong, Huiqi; Wang, Pan; Arutt, Charles N; Ni, Kai; McCurdy, Mike; Verbauwhede, Ingrid; Bury, Erik; Linten, Dimitri; Fleetwood, Daniel; Schrimpf, Ron; Reed, Robert (2018)