Browsing by author "Radu, Iuliana"
Now showing items 21-40 of 308
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Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
Schoenaers, Ben; Leonhardt, Alessandra; Nalin Mehta, Ankit; Stesmans, Andre; Chiappe, Daniele; Asselberghs, Inge; Radu, Iuliana; Huyghebaert, Cedric; De Gendt, Stefan; Houssa, Michel; Afanas'ev, Valeri V. (2020) -
Anisotropic magnetoresistance measurement of large voltage response in a scaled artificial magnetoelectric composite
Ahmad, Hasnain; Kouwenhoven, Max; Vanderveken, Frederic; Tierno, Davide; Radu, Iuliana; Ciubotaru, Florin; Adelmann, Christoph (2020) -
Area and routing efficiency of SWD circuits compared to advanced CMOS
Zografos, Odysseas; Raghavan, Praveen; Sherazi, Yasser; Vaysset, Adrien; Ciubotaru, Florin; Soree, Bart; Lauwereins, Rudy; Radu, Iuliana; Thean, Aaron (2015) -
Assessing the prospects of atomic layer deposition for two-dimensional materials in microelectronic applications
Groven, Benjamin; Tomczak, Yoann; Nalin Mehta, Ankit; Bender, Hugo; Zhang, Haodong; Schram, Tom; Smets, Quentin; Heyns, Marc; Caymax, Matty; Radu, Iuliana; Delabie, Annelies (2018) -
Atomic layer deposition of 2D transition metal dichalogenides
Delabie, Annelies; Caymax, Matty; Groven, Benjamin; Heyne, Markus; Haesevoets, Karel; Meersschaut, Johan; Nuytten, Thomas; Bender, Hugo; Conard, Thierry; Verdonck, Patrick; Van Elshocht, Sven; Heyns, Marc; Barla, Kathy; Radu, Iuliana; Thean, Aaron (2015-10) -
Atomic layer etching of amorphous Si on MoS2 for selectively patterned MX2 heterostructures
Heyne, Markus; Goodyear, Andy; de Marneffe, Jean-Francois; Cooke, Mike; Neyts, Erik; Radu, Iuliana; De Gendt, Stefan (2017) -
Atomic layer etching of amorphous silicon with selectivity towards MoS2
Heyne, Markus; Goodyear, Andy; de Marneffe, Jean-Francois; Cooke, Mike; Radu, Iuliana; Neyts, Erik C.; De Gendt, Stefan (2017) -
Atomic layer etching of amorphous silicon with selectivity towards MoS2 for novel MX2 heterostructure device concepts
Heyne, Markus; Goodyear, Andy; de Marneffe, Jean-Francois; Cooke, Mike; Neyts, Erik C.; Radu, Iuliana; De Gendt, Stefan (2017) -
Atomic layer processing of 2D materials for beyond CMOS applications
Delabie, Annelies; Caymax, Matty; Groven, Benjamin; Heyne, Markus; Zhang, Haodong; Chiappe, Daniele; Heyns, Marc; Radu, Iuliana (2016) -
Back-hopping in spin transfer torque switching of perpendicularly magnetized tunnel junctions
Devolder, Thibaut; Bultynck, Olivier; Bouquin, Paul; Nguyen, Van Dai; Rao, Siddharth; Radu, Iuliana; Kar, Gouri Sankar; Couet, Sebastien (2020) -
Band alignment and effective work function of atomiclayer deposited VO2 and V2O5 films on SiO2 and Al2O3
Cerbu, Florin; Chou, H.S.; Radu, Iuliana; Martens, Koen; Peter, Antony; Afanasev, Valeri; Stesmans, Andre (2015) -
Benchmarking of monolithic 3D integrated MX2 FETs with Si FinFETs
Agarwal Kumar, Tarun; Szabo, Aron; Garcia Bardon, Marie; Soree, Bart; Radu, Iuliana; Raghavan, Praveen; Luisier, Mathieu; Dehaene, Wim; Heyns, Marc (2017) -
Benchmarking of MoS2 FETs with multigate Si-FET options for 5 nm and beyond
Agarwal Kumar, Tarun; Yakimets, Dmitry; Raghavan, Praveen; Radu, Iuliana; Thean, Aaron; Heyns, Marc; Dehaene, Wim (2015) -
BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line
Schram, Tom; Smets, Quentin; Heyne, Markus; Groven, Benjamin; Kunnen, Eddy; Thiam, Arame; Devriendt, Katia; Delabie, Annelies; Lin, Dennis; Chiappe, Daniele; Asselberghs, Inge; Lux, Marcel; Brus, Stephan; Huyghebaert, Cedric; Sayan, Safak; Juncker, Aurélie; Caymax, Matty; Radu, Iuliana (2017) -
Bilayer graphene tunneling-FET for sub-0.2 V digital CMOS logic applications
Agarwal Kumar, Tarun; Nourbakhsh, Amirhasan; Raghavan, Praveen; Radu, Iuliana; Verhelst, Marian; De Gendt, Stefan; Heyns, Marc; Thean, Aaron (2014) -
Bringing 2D material integration from the lab to the fab
Huyghebaert, Cedric; Schram, Tom; Brems, Steven; Asselberghs, Inge; Chiappe, Daniele; Radu, Iuliana (2017) -
Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications
Vandooren, Anne; Wu, Zhicheng; Khaled, Ahmad; Franco, Jacopo; Parvais, Bertrand; Li, W.; Witters, Liesbeth; Walke, Amey; Peng, Lan; Rassoul, Nouredine; Matagne, Philippe; Jamieson, Geraldine; Inoue, Fumihiro; Nguyen, B.Y.; Debruyn, Haroen; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Radisic, Dunja; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Besnard, G.; Schwarzenbach, W.; Gaudin, G.; Radu, Iuliana; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Ryckaert, Julien; Collaert, Nadine; Mocuta, Dan (2019) -
Capacitance stability of carbon nanowalls-based supercapacitors
Qaid, Mohammad; Radu, Iuliana; Cott, Daire; Al-Salhi, Mohamad; Vereecken, Philippe (2012) -
Chain of magnetic tunnel junctions as a spintronic memristor
Raymenants, Eline; Vaysset, Adrien; Wan, Danny; Manfrini, Mauricio; Zografos, Odysseas; Bultynck, Olivier; Doevenspeck, Jonas; Heyns, Marc; Radu, Iuliana; Devolder, Thibaut (2018) -
Challenges and opportunities for Atomic Layer Deposition of 2D transition metal dichalcogenides
Delabie, Annelies; Groven, Benjamin; Heyne, Markus; Zhang, Haodong; Tomczak, Yoann; Caymax, Matty; Radu, Iuliana (2016)