Browsing by author "Mocuta, Dan"
Now showing items 21-40 of 112
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Demonstration of 2e12/cm-2-eV-1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5nm EOT
Gaur, Abhinav; Balaji, Yashwanth; Lin, Dennis; Adelmann, Christoph; Van Houdt, Jan; Heyns, Marc; Mocuta, Dan; Radu, Iuliana (2017) -
Double-gate Si junction-less n-type transistor for high performance Cu-BEOL compatible applications using 3D sequential integration
Vandooren, Anne; Witters, Liesbeth; Vecchio, Emma; Kunnen, Eddy; Hellings, Geert; Peng, Lan; Inoue, Fumihiro; Li, Waikin; Waldron, Niamh; Mocuta, Dan; Collaert, Nadine (2017) -
DTCO and TCAD for a 12 layer-EUV ultra-scaled surrounding gate transistor 6T-SRAM
Matagne, Philippe; Nakamura, H.; Kim, Min-Soo; Kikuchi, Yoshiaki; Huynh Bao, Trong; Tao, Zheng; Li, Waikin; Devriendt, Katia; Ragnarsson, Lars-Ake; Boemmels, Juergen; Mallik, Arindam; Altamirano Sanchez, Efrain; Sebaai, Farid; Lorant, Christophe; Jourdan, Nicolas; Porret, Clément; Mocuta, Dan; Harada, N.; Matsuoka, F. (2018) -
Effective contact resistivity reduction for Mo/Pd/n-In0.53Ga0.47As contact
Zhang, Jian; Wang, Linlin; Yu, Hao; Merckling, Clement; Mols, Yves; Vais, Abhitosh; Ramesh, Siva; Ivanov, Tsvetan; Schaekers, Marc; Horiguchi, Naoto; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin; Jiang, Yulong (2019) -
Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass
Kikuchi, Yoshiaki; Chiarella, Thomas; De Roest, David; Blanquart, Timothee; De Keersgieter, An; Kenis, Karine; Peter, Antony; Ong, Patrick; Van Besien, Els; Tao, Zheng; Kim, Min-Soo; Kubicek, Stefan; Chew, Soon Aik; Schram, Tom; Demuynck, Steven; Mocuta, Anda; Mocuta, Dan; Horiguchi, Naoto (2016) -
Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers
Lariviere, Stephane; Wilson, Chris; Kutrzeba Kotowska, Bogumila; Versluijs, Janko; Decoster, Stefan; Mao, Ming; van der Veen, Marleen; Jourdan, Nicolas; El-Mekki, Zaid; Heylen, Nancy; Kesters, Els; Verdonck, Patrick; Beral, Christophe; Van Den Heuvel, Dieter; De Bisschop, Peter; Bekaert, Joost; Blanco, Victor; Ciofi, Ivan; Wan, Danny; Briggs, Basoene; Mallik, Arindam; Hendrickx, Eric; Kim, Ryan Ryoung han; McIntyre, Greg; Ronse, Kurt; Boemmels, Juergen; Tokei, Zsolt; Mocuta, Dan (2018) -
Electrical switching properties in asymmetric MTJs for logic applications
Raymenants, Eline; Manfrini, Mauricio; Vaysset, Adrien; Swerts, Johan; Van Beek, Simon; Heyns, Marc; Nikonov, D.E.; Sasikanth, M; Young, I.A.; Mocuta, Dan; Radu, Iuliana (2017) -
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge Fin structures
Loo, Roger; Arimura, Hiroaki; Cott, Daire; Witters, Liesbeth; Pourtois, Geoffrey; Schulze, Andreas; Douhard, Bastien; Vanherle, Wendy; Eneman, Geert; Richard, Olivier; Favia, Paola; Mitard, Jerome; Mocuta, Dan; Langer, Robert; Collaert, Nadine (2017-09) -
Epitaxial CVD growth of ultra-thin Si passivation layers on strained Ge fin structures
Loo, Roger; Arimura, Hiroaki; Cott, Daire; Witters, Liesbeth; Pourtois, Geoffrey; Schulze, Andreas; Douhard, Bastien; Vanherle, Wendy; Eneman, Geert; Richard, Olivier; Favia, Paola; Mitard, Jerome; Mocuta, Dan; Langer, Robert; Collaert, Nadine (2018-02) -
Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon
Qiu, Yang; Bender, Hugo; Richard, Olivier; Kim, Min-Soo; Van Besien, Els; Vos, Ingrid; de Potter de ten Broeck, Muriel; Mocuta, Dan; Vandervorst, Wilfried (2015) -
Epitaxial growth of diamond-hexagonal silicon on silicon
Qiu, Yang; Bender, Hugo; Richard, Olivier; Kim, Min-Soo; Vos, Ingrid; de Potter de ten Broeck, Muriel; Van Besien, Els; Mocuta, Dan; Vandervorst, Wilfried (2015) -
Extreme scaling enabled by 5 tracks cells : holistic design-device co-optimization for FinFETs and lateral nanowires
Garcia Bardon, Marie; Sherazi, Yasser; Schuddinck, Pieter; Jang, Doyoung; Yakimets, Dmitry; Debacker, Peter; Baert, Rogier; Mertens, Hans; Badaroglu, Mustafa; Mocuta, Anda; Horiguchi, Naoto; Mocuta, Dan; Raghavan, Praveen; Ryckaert, Julien; Verkest, Diederik; Steegen, An (2016) -
Fabrication of magnetic tunnel junctions connected through a continuous free layer to enable spin logic devices
Wan, Danny; Manfrini, Mauricio; Vaysset, Adrien; Souriau, Laurent; Wouters, Lennaert; Thiam, Arame; Raymenants, Eline; Sayan, Safak; Jussot, Julien; Swerts, Johan; Couet, Sebastien; Rassoul, Nouredine; Babaei Gavan, Khashayar; Paredis, Kristof; Huyghebaert, Cedric; Ercken, Monique; Wilson, Chris; Mocuta, Dan; Radu, Iuliana (2018) -
Fabrication of superconducting resonators in a 300 mm pilot line for quantum technologies
Wan, Danny; Swerts, Johan; Souriau, Laurent; Burnett, Jonathan; Piao, Xiaoyu; Mongillo, Massimo; Verjauw, Jeroen; Potocnik, Anton; Thiam, Arame; Jussot, Julien; Vangoidsenhoven, Diziana; Pacco, Antoine; Kudra, Marina; Niepce, David; Ivanov, Tsvetan; Boccardi, Guillaume; Mocuta, Dan; Bylander, Jonas; Radu, Iuliana (2019) -
First demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers
Vandooren, Anne; Franco, Jacopo; Wu, Zhicheng; Parvais, Bertrand; Li, Waikin; Walke, Amey; Peng, Lan; Deshpande, Paru; Rassoul, Nouredine; Hellings, Geert; Jamieson, Geraldine; Inoue, Fumihiro; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Mannaert, Geert; Chan, BT; Ritzenthaler, Romain; Mitard, Jerome; Ragnarsson, Lars-Ake; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Mocuta, Dan; Ryckaert, Julien; Collaert, Nadine (2018) -
First demonstration of vertically stacked gate-all-around highly strained germanium nanowire pFETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018-11) -
First demonstration of vertically-stacked gate-all-around highly-strained germanium nanowire p-FETs
Capogreco, Elena; Witters, Liesbeth; Arimura, Hiroaki; Sebaai, Farid; Porret, Clément; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Eneman, Geert; Favia, Paola; Bender, Hugo; Wostyn, Kurt; Dentoni Litta, Eugenio; Schulze, Andreas; Vrancken, Christa; Opdebeeck, Ann; Mitard, Jerome; Langer, Robert; Holsteyns, Frank; Waldron, Niamh; Barla, Kathy; De Heyn, Vincent; Mocuta, Dan; Collaert, Nadine (2018) -
First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
Sioncke, Sonja; Franco, Jacopo; Vais, Abhitosh; Putcha, Vamsi; Nyns, Laura; Sibaja-Hernandez, Arturo; Rooyackers, Rita; Calderon Ardila, Sergio; Spampinato, Valentina; Franquet, Alexis; Maes, Willem; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Heyns, Marc; Linten, Dimitri; Mitard, Jerome; Thean, Aaron; Mocuta, Dan; Collaert, Nadine (2017) -
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Chew, Soon Aik; De Keersgieter, An; Mannaert, Geert; Rosseel, Erik; Schram, Tom; Devriendt, Katia; Tsvetanova, Diana; Dekkers, Harold; Demuynck, Steven; Vaisman Chasin, Adrian; Van Besien, Els; Dangol, Anish; Godny, Stephane; Douhard, Bastien; Bosman, Niels; Richard, Olivier; Geypen, Jef; Bender, Hugo; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto; Thean, Aaron (2016) -
Gate-all-around transistors based on vertically stacked Si nanowires
Mertens, Hans; Ritzenthaler, Romain; Hikavyy, Andriy; Kim, Min-Soo; Tao, Zheng; Wostyn, Kurt; Schram, Tom; Kunnen, Eddy; Ragnarsson, Lars-Ake; Dekkers, Harold; Hopf, Toby; Devriendt, Katia; Tsvetanova, Diana; Chew, Soon Aik; Kikuchi, Yoshiaki; Van Besien, Els; Rosseel, Erik; Mannaert, Geert; De Keersgieter, An; Vaisman Chasin, Adrian; Kubicek, Stefan; Dangol, Anish; Demuynck, Steven; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto (2017)