Browsing by author "Nigam, Tanya"
Now showing items 21-39 of 39
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Investigation of temperature acceleration of thin oxide time-to-breakdown
Kaczer, Ben; Degraeve, Robin; Pangon, Nadège; Nigam, Tanya; Groeseneken, Guido (1999) -
Is the constant current charge-to-breakdown method still a good tool to measure oxide reliability
Nigam, Tanya; Degraeve, Robin; Groeseneken, Guido; Heyns, Marc (1997) -
Measurement technique, oxide thickness and area dependence of soft breakdown
Nigam, Tanya; Degraeve, Robin; Groeseneken, Guido; Heyns, Marc; Maes, Herman (2000) -
Model for the current-voltage characteristics of ultrathin gate oxides after soft breakdown
Houssa, Michel; Nigam, Tanya; Mertens, Paul; Heyns, Marc (1998) -
On the properties of the gate and substrate current after soft breakdown in ultrathin oxide layers
Crupi, Felice; Degraeve, Robin; Groeseneken, Guido; Nigam, Tanya; Maes, Herman (1998) -
Reliability of ultra-thin dielectrics for giga scale silicon technologies
Maes, Herman; Degraeve, Robin; Nigam, Tanya; De Blauwe, Jan; Groeseneken, Guido (1998) -
Reliability of ultra-thin dielectrics for giga scale silicon technologies
Maes, Herman; Degraeve, Robin; Nigam, Tanya; De Blauwe, Jan; Groeseneken, Guido (1999) -
Reliability of ultra-thin gate oxide below 3 nm in the direct tunneling regime
Depas, Michel; Degraeve, Robin; Nigam, Tanya; Groeseneken, Guido; Heyns, Marc (1997) -
Reliability of ultra-thin gate oxides below 3 nm in the direct tunneling regime
Depas, Michel; Degraeve, Robin; Nigam, Tanya; Groeseneken, Guido; Heyns, Marc (1996) -
Reliability of ultra-thin oxides for the giga-bit generations
Groeseneken, Guido; Degraeve, Robin; Nigam, Tanya; Kaczer, Ben; Maes, Herman (1999) -
Soft breakdown in ultrathin gate oxides: correlation with the percolation theory of nonlinear conductors
Houssa, Michel; Nigam, Tanya; Mertens, Paul; Heyns, Marc (1998) -
Soft breakdown of ultra-thin gate oxide layers
Depas, Michel; Nigam, Tanya; Heyns, Marc (1996) -
Study of dielectric breakdown on 4.3 nm oxides using substrate hot electron injection
Nigam, Tanya; Degraeve, Robin; Groeseneken, Guido; Heyns, Marc (1997) -
Technology and reliability aspects of ultra-thin silicon dioxide layers
Heyns, Marc; Nigam, Tanya; Degraeve, Robin; Mertens, Paul; Schaekers, Marc; Bearda, Twan; De Gendt, Stefan; Groeseneken, Guido; Maes, Herman; Claes, Martine; Houssa, Michel; Vandewalle, N.; Ausloos, M. (1999) -
Technology and reliability of sub-3nm oxides
Heyns, Marc; Nigam, Tanya; Degraeve, Robin; Mertens, Paul; Schaekers, Marc; De Gendt, Stefan; Groeseneken, Guido; Maes, Herman; Houssa, Michel; Vandewalle, N.; Ausloos, M. (1999) -
Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability
Degraeve, Robin; Pangon, Nadège; Kaczer, Ben; Nigam, Tanya; Groeseneken, Guido; Naem, Abdalla (1999) -
The effect of elevated temperature on the reliability of very thin oxide films
Kaczer, Ben; Degraeve, Robin; Pangon, Nadège; Nigam, Tanya; Groeseneken, Guido (1999) -
Ultra thin gate oxide technology and reliability
Heyns, Marc; Depas, Michel; Teerlinck, Ivo; Meuris, Marc; Mertens, Paul; Vanhellemont, Jan; Mouche, Laurent; Nigam, Tanya; Wilhelm, Rudi; Knotter, Martin; Wolke, K.; Crossley, A.; Sofield, C. J.; Gräf, D. (1996) -
Ultra-thin gate oxides below 3 nm grown in a cluster tool
Depas, Michel; Nigam, Tanya; Kenis, Karine; Heyns, Marc; Sprey, Hessel; Wilhelm, Rudi (1996)