Browsing by author "Alian, AliReza"
Now showing items 21-40 of 127
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Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016) -
Border traps in Ge/III-V channel devices: Analysis and reliability aspects
Simoen, Eddy; Lin, Dennis; Alian, AliReza; Brammertz, Guy; Merckling, Clement; Mitard, Jerome; Claeys, Cor (2013) -
Border traps in InGaAs nMOSFETs assessed by low-frequency noise
Scarpino, Mercedes; Gupta, Somya; Lin, Dennis; Alian, AliReza; Crupi, Felice; Collaert, Nadine; Thean, Aaron; Simoen, Eddy (2014) -
BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities
Groeseneken, Guido; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Kauerauf, Thomas; Alian, AliReza; Mitard, Jerome; Arimura, Hiroaki; Lin, Dennis; Waldron, Niamh; Sioncke, Sonja; Witters, Liesbeth; Mertens, Hans; Ragnarsson, Lars-Ake; Heyns, Marc; Collaert, Nadine; Thean, Aaron; Steegen, An (2014-12) -
BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs
Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; Cho, Moon Ju; Grasser, Tibor; Mitard, Jerome; Arimura, Hiroaki; Witters, Liesbeth; Cott, Daire; Waldron, Niamh; Zhou, Daisy; Vais, Abhitosh; Lin, Dennis; Alian, AliReza; Pourghaderi, Mohammad Ali; Martens, Koen; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Heyns, Marc; Groeseneken, Guido (2014) -
Capacitance-voltage (CV) characterization of GaAs/high-k oxide interfaces
Brammertz, Guy; Lin, H.C.; Martens, Koen; Merckling, Clement; Penaud, J.; Alian, AliReza; Sioncke, Sonja; Wang, Wei-E; Meuris, Marc; Caymax, Matty; Heyns, Marc (2008) -
Careful stoichiometry monitoring and doping control during the tunneling interface growth of an n + InAs(Si)/p + GaSb(Si) Esaki diode
El Kazzi, Salim; Alian, AliReza; Hsu, Brent; Verhulst, Anne; Walke, Amey; Favia, Paola; Douhard, Bastien; del Alamo, Jesus Del Alamo; Lu, Wenjie; Collaert, Nadine; Merckling, Clement (2018) -
Challenges for atomic layer deposition in CMOS devices with high-mobility channel materials
Delabie, Annelies; Alian, AliReza; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Sioncke, Sonja; Vandervorst, Wilfried; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc (2009) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Channel Thickness Impact on the Small- and Large-Signal RF Performance of GaN HEMTs on Si with a cGaN Back-Barrier
ElKashlan, Rana Y.; Rodriguez, Raul; Yadav, Sachin; Peralagu, Uthayasankaran; Alian, AliReza; Collaert, Nadine; Wambacq, Piet; Parvais, Bertrand (2022) -
Characterization and modelling of growth-induced defects in InGaAs by MOCVD
Hsu, Brent; Simoen, Eddy; Eneman, Geert; Alian, AliReza; Mols, Yves; Heyns, Marc (2017) -
Characterizing oxide traps in the InGaAs/Al2O3 system with sulfur passivation
Alian, AliReza; Brammertz, Guy; Degraeve, Robin; Cho, Moon Ju; Caymax, Matty; De Meyer, Kristin; Heyns, Marc (2012) -
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
Yadav, Sachin; Cardinael, Pieter; Zhao, Ming; Vondkar Kodandarama, Komal; Peralagu, Uthayasankaran; Alian, Alireza; Khaled, Ahmad; Makovejev, Sergej; Ekoga, Enrique; Lederer, Dimitri; Raskin, Jean-Pierre; Parvais, Bertrand; Collaert, Nadine (2021) -
CMOS-compatible GaN-based devices on 200mm-Si for RF applications: integration and performance
Peralagu, Uthayasankaran; Alian, AliReza; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Chang, Shane; Simoen, Eddy; Zhao, Simeng Ellen; De Jaeger, Brice; Fleetwood, Daniel M.; Wambacq, Piet; Zhao, Ming; Parvais, Bertrand; Waldron, Niamh; Collaert, Nadine (2019-12) -
Comprehensive Investigations of HBM ESD Robustness for GaN-on-Si RF HEMTs
Sandupatla, Abhinay; Wu, Wei-Min; Shih, Chun-An; Chen, Shih-Hung; Sibaja-Hernandez, Arturo; Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Wu, T. -L.; Ker, M. -D.; Groeseneken, Guido; Collaert, Nadine (2022) -
Deep level investigation of InGaAs on InP Layer
Wang, Chong; Simoen, Eddy; Alian, AliReza; Sioncke, Sonja; Collaert, Nadine; Claeys, Cor; Li, Wei (2017) -
Deep levels in Metal-Oxide-Semiconductor Capacitors Fabricated on n-type In0.53Ga0.47As Lattice Matched to InP Substrates
Simoen, Eddy; Hsu, Brent; Alian, AliReza; El Kazzi, Salim; Wang, Chong; Ori, Hiroyuki (2019) -
Defect characterization after ESD stress: merging TLP and Pulsed-IV techniques
Linten, Dimitri; Ji, Zhigang; Boschke, Roman; Hellings, Geert; Chen, Shih-Hung; Scholz, Mirko; Alian, AliReza; Collaert, Nadine; Thean, Aaron (2015) -
Design, fabrication and interface characterization of high mobility InGaAs channel MOS(FET) devices
Alian, AliReza (2012-10) -
Device assessment of electrically active defects in high-mobility materials
Claeys, Cor; Simoen, Eddy; Eneman, Geert; Ni, Kai; Hikavyy, Andriy; Loo, Roger; Gupta, Somya; Merckling, Clement; Alian, AliReza; Caymax, Matty (2016)