Publication:
Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts
Date
Loading...
Journal
Abstract
Description
Metrics
Views
2003 since deposited on 2021-10-27
1last month
Acq. date: 2025-12-15
Citations
Metrics
Views
2003 since deposited on 2021-10-27
1last month
Acq. date: 2025-12-15
Citations