Publication:
Epitaxial SiGe:B for advanced p-MOS contacts: low contact resistivities achieved by optimizing strain in SiGe and thermal treatments applied to contacts
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2008 since deposited on 2021-10-27
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Acq. date: 2026-09-01
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Statistics
Views
2008 since deposited on 2021-10-27
3last month
3last week
Acq. date: 2026-09-01
Citations