Browsing by author "Everaert, Jean-Luc"
Now showing items 1-20 of 86
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1.5×10-9 Ω·cm² Contact Resistivity on Highly Doped Si:P Using Ge Pre-amorphization and Ti Silicidation
Yu, Hao; Schaekers, Marc; Rosseel, Erik; Peter, Antony; Lee, Joon-Gon; Song, Woo-Bin; Demuynck, Steven; Chiarella, Thomas; Ragnarsson, Lars-Ake; Kubicek, Stefan; Everaert, Jean-Luc; Horiguchi, Naoto; Barla, Kathy; Kim, Daeyong; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2015) -
3D simulation for melt laser anneal integration in FinFET's contact
Tabata, Toshiyuki; Curvers, Benoit; Huet, Karim; Chew, Soon Aik; Everaert, Jean-Luc; Horiguchi, Naoto (2020) -
45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004) -
A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Shi, Qixian; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li Qun; Le, Maggie; Lee, Won (2011) -
A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li-Qun; Le, Maggie; Lee, Won (2010) -
A snapshot review on metal-semiconductor contact exploration for 7-nm CMOS technology and beyond
Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Horiguchi, Naoto; De Meyer, Kristin; Collaert, Nadine (2022-11-21) -
Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
Rothschild, Aude; Shi, Xiaoping; Everaert, Jean-Luc; Kerner, Christoph; Chiarella, Thomas; Hoffmann, Thomas; Vrancken, Christa; Shickova, Adelina; Yoshinao, H.; Mitsuhashi, Riichirou; Niwa, Masaaki; Lauwers, Anne; Veloso, Anabela; Kittl, Jorge; Absil, Philippe; Biesemans, Serge (2007) -
Advanced phosphorus emitters for high efficiency Si solar cells
Janssens, Tom; Posthuma, Niels; Van Kerschaver, Emmanuel; Baert, Kris; Choulat, Patrick; Everaert, Jean-Luc; Goossens, Jozefien; Vandervorst, Wilfried; Poortmans, Jef (2009) -
ALD as an enabler of self-aligned multiple patterning schemes
Van Elshocht, Sven; Tao, Zheng; Everaert, Jean-Luc; Demuynck, Steven; Altamirano Sanchez, Efrain (2017) -
Applications of dynamic surface annealing for high-performance Si and Ge based MOS devices
Rosseel, Erik; Everaert, Jean-Luc; Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vandervorst, Wilfried (2011) -
Basic aspects of the formation and activation of boron junctions using plasma immersion ion implantation
Zschaetzsch, Gerd; Vandervorst, Wilfried; Hoffmann, Thomas; Goossens, Jozefien; Everaert, Jean-Luc; del Agua Borniquel, Jose Ignacio; Poon, T. (2008) -
Bulk FinFET Fin height control using Gas Cluster Ion Beam (GCIB) - Location Specific Processing (LSP)
Kim, Min-Soo; Ritzenthaler, Romain; Everaert, Jean-Luc; Fernandez, Luis; Devriendt, Katia; Lee, Jae Woo; Redolfi, Augusto; Mertens, Sofie; Burke, Ed; Horiguchi, Naoto; Thean, Aaron (2013) -
Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Wang, Linlin; Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Franquet, Alexis; Douhard, Bastien; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, J.Y.; van Meer, Hans; Mocuta, Dan; Horiguchi, Naoto; Collaert, Nadine; De Meyer, Kristin; Jiang, Yu-Long (2017) -
Conformal doping for FINFET's: a fabrication and metrology challenge
Vandervorst, Wilfried; Everaert, Jean-Luc; Rosseel, Erik; Jurczak, Gosia; Hoffmann, Thomas Y.; Eyben, Pierre; Mody, Jay; Koelling, Sebastian; Gilbert, Matthieu; Pawlak, Bartek; Duffy, R.; Van Dal, Mark (2008) -
Conformal doping of FINFET's: a fabrication and metrology challenge
Vandervorst, Wilfried; Eyben, Pierre; Mody, Jay; Jurczak, Gosia; Nguyen, Duy; Takeuchi, Shotaro; Leys, Frederik; Loo, Roger; Caymax, Matty; Everaert, Jean-Luc (2008) -
Conformal doping of FINFET's: a fabrication and metrology challenge
Vandervorst, Wilfried; Everaert, Jean-Luc; Rosseel, Erik; Jurczak, Gosia; Hoffmann, Thomas; Eyben, Pierre; Mody, Jay; Zschaetzsch, Gerd; Koelling, Sebastian; Gilbert, Matthieu; Poon, T.; del Agua Borniquel, Jose Ignacio; Foad, M.; Duffy, Ray; Pawlak, Bartek (2008) -
Contactless mobility measurements of inversion charge carriers on silicon substrates with SiO2 and HfO2 gate dielectrics
Everaert, Jean-Luc; Rosseel, Erik; Dekoster, Johan; Pap, Aron; Maszaros, Albert; Kis-Szabo, Krisztian; Pavelka, Tibor (2010) -
Control of laser induced interface traps with in-line corona charge metrology
Everaert, Jean-Luc; Rosseel, Erik; Ortolland, Claude; Aoulaiche, Marc; Hoffmann, Thomas Y.; Pavelka, Tibor; Don, Eric (2008) -
Crystallinity and composition of Sc1-x(-y)SixP(y) silicides in annealed TiN/Sc/Si:P stacks for advanced contact applications
Pollefliet, Bert; Porret, Clément; Everaert, Jean-Luc; Sankaran, Kiroubanand; Piao, Xiaoyu; Rosseel, Erik; Conard, Thierry; Impagnatiello, Andrea; Shimura, Yosuke; Horiguchi, Naoto; Loo, Roger; Vantomme, Andre; Merckling, Clement (2024) -
Demonstration of phase-controlled Ni-FUSI CMOSFETs employing SiON dielectrics capped with sub-monolayer ALD HfSiON for low power applications
Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Delabie, Annelies; Everaert, Jean-Luc; Singanamalla, Raghunath; Kerner, Christoph; Vrancken, Christa; Brus, Stephan; Absil, Philippe; Hoffmann, Thomas; Biesemans, Serge (2007-09)