Buried power SRAM DTCO and system-level benchmarking in N3

Abstract

The increased metal resistance degrades both the performance and write margin of SRAM circuits in sub-10nm nodes. This paper utilizes buried power distribution as SRAM performance and write ability booster in 3nm node. BPR-SRAM offers up to 34.5% read speed and 498.6mV write margin improvement over conventional SRAM. GemS system simulator predicts up to 28.2% performance gain with server-processor having BPR-SRAM in L2 and L3 cache as compared to the baseline.