Browsing Conference contributions by imec author "71b89e915792bbfe9fa9298dbedd09c1c84a50cf"
Now showing items 1-20 of 70
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80nm tall thermally stable cost effective FinFETs for advanced DRAM periphery devices for AI/ML and Automotive applications
Spessot, Alessio; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Dupuy, Emmanuel; O'Sullivan, Barry; Bastos, Joao; Capogreco, Elena; Miyaguchi, Kenichi; Machkaoutsan, Vladimir; Yoon, Younggwang; Fazan, Pierre; Horiguchi, Naoto (2020) -
A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Chang, Vincent; Ragnarsson, Lars-Ake; Pourtois, Geoffrey; O'Connor, Robert; Adelmann, Christoph; Van Elshocht, Sven; Delabie, Annelies; Swerts, Johan; Van der Heyden, Nikolaas; Conard, Thierry; Cho, Hag-Ju; Akheyar, Amal; Mitsuhashi, Riichirou; Witters, Thomas; O'Sullivan, Barry; Pantisano, Luigi; Rohr, Erika; Lehnen, Peer; Kubicek, Stefan; Schram, Tom; De Gendt, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
Accelerated device degradation analysis on high speed Ge waveguide photodetectors
Lesniewska, Alicja; Srinivasan, Ashwyn; Van Campenhout, Joris; O'Sullivan, Barry; Croes, Kristof (2019) -
Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007-09) -
Advanced high-k materials and electrical analysis for memories: the role of SiO2-high-k dielectric intermixing
Morassi, L.; Larcher, L.; Pantisano, Luigi; Padovani, A.; Degraeve, Robin; Zahid, Mohammed; O'Sullivan, Barry (2009) -
Al2O3 passivation for copper plated 15.6x15.6 cm2 IBC cells
Jambaldinni, Shruti; Kyuzo, Manabu; O'Sullivan, Barry; Singh, Sukhvinder; Cornagliotti, Emanuele; Zielinski, Bartosz; Debucquoy, Maarten; Szlufcik, Jozef; Poortmans, Jef (2016) -
ALD Al2O3 for surface passivation of silicon solar cells: impact of covering metal
Loozen, Xavier; O'Sullivan, Barry; Rothschild, Aude; Vermang, Bart; John, Joachim; Poortmans, Jef (2010) -
ALD-Al2O3 passivation for solar cells: charge investigation
Rothschild, Aude; Vermang, Bart; Loozen, Xavier; O'Sullivan, Barry; John, Joachim; Poortmans, Jef (2010) -
Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping
O'Connor, Robert; Chang, Vincent; Pantisano, Luigi; Ragnarsson, Lars-Ake; Aoulaiche, Marc; O'Sullivan, Barry; Adelmann, Christoph; Van Elshocht, Sven; Lehnen, Peer; Yu, HongYu; Groeseneken, Guido (2008) -
Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric
Hiblot, Gaspard; O'Sullivan, Barry; Ronchi, Nicolo; Banerjee, Kaustuv (2021) -
Atomic and electrical characterisation of amorphous silicon passivation layers
O'Sullivan, Barry; Thoan, N.H.; Jivanescu, M.; Pantisano, Luigi; Bearda, Twan; Dross, Frederic; Gordon, Ivan; Afanasiev, Valeri; Stesmans, Andre; Poortmans, Jef (2012) -
AVD and MOCVD TaCN-based films for gate metal applications on high-k gate dielectrics
Karim, Zia; Barbar, Ghassan; Boissiere, Olivier; Lehnen, Peer; Lohe, Christoph; Seidel, Tom; Adelmann, Christoph; Conard, Thierry; O'Sullivan, Barry; Ragnarsson, Lars-Ake; Schram, Tom; Van Elshocht, Sven; De Gendt, Stefan (2007-10) -
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery
Bastos, Joao; O'Sullivan, Barry; Franco, Jacopo; Tyaginov, Stanislav; Truijen, Brecht; Vaisman Chasin, Adrian; Degraeve, Robin; Kaczer, Ben; Ritzenthaler, Romain; Capogreco, Elena; Dentoni Litta, Eugenio; Spessot, Alessio; Higashi, Yusuke; Yoon, Younggwang; Machkaoutsan, Vladimir; Fazan, Pierre; Horiguchi, Naoto (2022) -
Cell-module integration concept compatible with c-Si epitaxial thin foils and with efficiencies over 18%
Dross, Frederic; Van Nieuwenhuysen, Kris; Bearda, Twan; Debucquoy, Maarten; Depauw, Valerie; Govaerts, Jonathan; Boulord, Caroline; Granata, Stefano; Labie, Riet; Loozen, Xavier; Martini, Roberto; O'Sullivan, Barry; Radhakrishnan, S.; Baert, Kris; Gordon, Ivan; Poortmans, Jef (2012) -
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
Grasser, T.; Stampfer, B.; Waltl, M.; Rzepa, G.; Rupp, K.; Schanovsky, F.; Pobegen, G.; Puschkarsky, K.; Reisinger, H.; O'Sullivan, Barry; Kaczer, Ben (2018) -
CMOS integration of thermally stable diffusion and gate replacement (D&GR) high-k/metal gate stacks in DRAM periphery transistors
Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O'Sullivan, Barry; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto (2017) -
Cost effective dry oxidation for emitter passivation: a key step for high efficiency screen printed p-type PERC solar cells
Choulat, Patrick; Prajapati, Victor; Sleeckx, Erik; Singh, Sukhvinder; Tous, Loic; O'Sullivan, Barry; Ferro, V.; Duerinckx, Filip (2013) -
CV Stretch-Out Correction after Bias Temperature Stress: Work-function Dependence of Donor-/Acceptor-like Traps, Fixed Charges, and Fast States
Grasser, T.; O'Sullivan, Barry; Kaczer, Ben; Franco, Jacopo; Stampfer, B.; Waltl, M. (2021) -
Defect profiling and the role of nitrogen in lanthanum oxide-capped high-k dielectrics for nMOS applications
O'Sullivan, Barry; Mitsuhashi, Riichirou; Okawa, Hiroshi; Sengoku, Naohisa; Schram, Tom; Groeseneken, Guido; Biesemans, Serge; Nakabayashi, Takashi; Ikeda, Atsushi; Niwa, Masaaki (2008-09) -
Development and implementation of a plated and solderable metallization on 15.6x15.6 cm2 IBC cells
Singh, Sukhvinder; O'Sullivan, Barry; Kyuzo, Manabu; Tous, Loic; Russell, Richard; Bertens, Jurgen; de Wit, Andre; Debucquoy, Maarten; Szlufcik, Jozef; Poortmans, Jef (2015)