Browsing Conference contributions by imec author "efc61bf769711286fc005bc674fd92a81c50f7c6"
Now showing items 21-35 of 35
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On the low-frequency noise performance of embedded Si:C nMOSFETs
Simoen, Eddy; Verheyen, Peter; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Bauer, M.; Thomas, S.G. (2009) -
On the low-frequency noise performance of embedded Si:C nMOSFETs
Simoen, Eddy; Verheyen, Peter; Loo, Roger; Claeys, Cor; Machkaoutsan, Vladimir; Bauer, M.; Thomas, S.G. (2009) -
Orientation dependence of Si1-xCx:P growth and the impact on FinFET structues
Tolle, John; Weeks, Doran; Bauer, Matthias; Machkaoutsan, Vladimir; Maes, Jan; Togo, Mitsuhiro; Brus, Stephan; Hikavyy, Andriy; Loo, Roger (2012) -
Orientation dependence of Si1-xCx:P growth and the impact on FiNFET structures
Tolle, John; Weeks, Doran; Bauer, Matthias; Machkaoutsan, Vladimir; Maes, Jan; Togo, Mitsuhiro; Brus, Stephan; Hikavyy, Andriy; Loo, Roger (2012-10) -
Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
Togo, Mitsuhiro; Lee, Jae Woo; Pantisano, Luigi; Chiarella, Thomas; Ritzenthaler, Romain; Krom, Raymond; Hikavyy, Andriy; Loo, Roger; Rosseel, Erik; Brus, Stephan; Maes, J.W.; Machkaoutsan, Vladimir; Tolle, J.; Eneman, Geert; De Keersgieter, An; Boccardi, Guillaume; Mannaert, Geert; Altamirano Sanchez, Efrain; Locorotondo, Sabrina; Demand, Marc; Horiguchi, Naoto; Thean, Aaron (2012) -
Relaxation induced excess leakage current in recessed Si1-xGex source/drain junctions
Bargallo Gonzalez, Mireia; Chowdhury, Mohammad Kamruzzaman; Bhouri, Nada; Verheyen, Peter; Leys, Frederik; Richard, Olivier; Loo, Roger; Claeys, Cor; Simoen, Eddy; Machkaoutsan, Vladimir; Tomasini, P.; Thomas, S.G.; Lu, J.P.; Weijtmans, J.W.; Wise, R. (2007) -
Reliability engineering enabling continued logic for memory device scaling
O'Sullivan, Barry; Ritzenthaler, Romain; Dentoni Litta, Eugenio; Simoen, Eddy; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Kim, Cheolgyu; Spessot, Alessio; Linten, Dimitri; Horiguchi, Naoto (2019) -
Si-cap-free SiGe p-channel Fin FETS and gate-all-around transistors in a replacement metal gate Process: interface trap density reduction and performance improvement by high-pressure deuterium anneal
Mertens, Hans; Ritzenthaler, Romain; Arimura, Hiroaki; Franco, Jacopo; Sebaai, Farid; Hikavyy, Andriy; Pawlak, Bartek; Machkaoutsan, Vladimir; Devriendt, Katia; Tsvetanova, Diana; Milenin, Alexey; Witters, Liesbeth; Dangol, Anish; Vancoille, Eric; Bender, Hugo; Badaroglu, Mustafa; Holsteyns, Frank; Barla, Kathy; Mocuta, Dan; Horiguchi, Naoto; Thean, Aaron (2015) -
SiCP selective epitaxial growth in recessed source/drain regions yielding to drive current enhancement in n-channel MOSFET
Bauer, Matthias; Machkaoutsan, Vladimir; Zhang, Y.; Weeks, Doran; Spear, Jennifer; Thomas, Shawn; Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hikavyy, Andriy; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge (2008) -
SiGe band-to-band tunneling calibration based on p-i-n diodes: fabrication, measurement and simulation
Kao, Frank; Verhulst, Anne; Rooyackers, Rita; Hikavyy, Andriy; Simoen, Eddy; Arstila, Kai; Douhard, Bastien; Loo, Roger; Milenin, Alexey; Tolle, J.; Dekkers, Harold; Machkaoutsan, Vladimir; Maes, Jan; De Meyer, Kristin; Collaert, Nadine; Heyns, Marc; Huyghebaert, Cedric; Thean, Aaron (2012) -
SiGe band-to-band tunneling calibration based on p-i-n diodes: fabrication, measurement and simulation
Kao, Frank; Verhulst, Anne; Rooyackers, Rita; Hikavyy, Andriy; Loo, Roger; Milenin, Alexey; Tolle, John; Dekkers, Harold; Simoen, Eddy; Machkaoutsan, Vladimir; Maes, Jan; De Meyer, Kristin; Collaert, Nadine; Heyns, Marc; Huyghebaert, Cedric; Thean, Aaron (2012) -
SiGe recessed source-drain (RSD) stressors for PMOS: effect of device integration flow and increased Ge content on electrical performance
Machkaoutsan, Vladimir; Verheyen, Peter; Tomasini, P.; Eneman, Geert; Loo, Roger; Absil, Philippe; Thomas, S.G.; Lu, Jiong Ping; Weijtmans, J.W.; Wise, R. (2007) -
Stability of silicon germanium stressors
Tomasini, P; Machkaoutsan, Vladimir; Thomas, S. G.; Loo, Roger; Caymax, Matty; Verheyen, Peter (2009) -
Strain enhanced nMOS using in-situ doped embedded Si:C S/D stressors with up to 1.5% substitutional carbon content grown using a novel deposition process
Verheyen, Peter; Kerner, Christoph; Clemente, Francesca; Bender, Hugo; Shamiryan, Denis; Loo, Roger; Hoffmann, Thomas Y.; Absil, Philippe; Biesemans, Serge; Lu, Jiong-Ping; Wise, Rick; Machkaoutsan, Vladimir; Bauer, Matthias; Weeks, Dorian; Thomas, Shawn (2008) -
Thermal stability of Pt and C-doped NiSi films
Machkaoutsan, Vladimir; Pagès, X.; Bauer, M.; Thomas, S.; Mertens, Sofie; Verheyden, K.; Vanormelingen, Koen; Granneman, E. (2007)