Recently added

High-Q photonic crystal nanocavities on 300 mm SOI substrate fabricated by 193 nm immersion lithography

Xie, Weiqiang; Fiers, Martin; Selvaraja, Shankar; Van Campenhout, Joris; Absil, Philippe; Van Thourhout, Dries (2012)

Carbon nanotube growth for high aspect ratio interconnect applications

Xie, Rongsie; Zhang, Can; Chen, Bingan; Zhong, Guofang; Robertson, john; van der Veen, Marleen (2012)

Forward gate bias on-state stress on AlGaN/GaN MIS-HEMTs for power switching applications

Wu, Tian-Li; Marcon, Denis; Zahid, Mohammed; Van Hove, Marleen; Stoffels, Steve; Srivastava, Puneet; Decoutere, Stefaan; Groeseneken, Guido (2012)

Litho 1-litho 2 proximity differences for s LELE and LPLE double patterning processes

Wong, Patrick; De Bisschop, Peter; Vandenbroeck, Nadia; Wiaux, Vincent; Van de Kerkhove, Jeroen; Robertson, Stewart; Biafore, John (2012)

Critical material properties for pattern collapse mitigation

Winroth, Gustaf; Younkin, Todd; Blackwell, James M.; Gronheid, Roel (2012)

Monolithic integration of an active asynchronous voltage clamp with a 12V/3A full bridge synchronous rectifier

Windels, Jindrich; Monte, Ann; Doutreloigne, Jan (2012)

Integration of a k=2.3 spin-on polymer for the sub-28nm technology node

Wilson, Chris; Lazzarino, Frederic; Truffert, Vincent; Kirimura, Tomoyuki; de Marneffe, Jean-Francois; Verdonck, Patrick; Hirai, M.; Nakatani, K.; Tada, M.; Heylen, Nancy; El-Mekki, Zaid; Vanstreels, Kris; Van Besien, Els; Ciofi, Ivan; Stucchi, Michele; Croes, Kristof; Zhang, Liping; Demuynck, Steven; Ercken, Monique; Xu, Kaidong; Baklanov, Mikhaïl; Tokei, Zsolt (2012)

Comparison of x-ray diffraction, wafer curvature and Raman spectroscopy to evaluate the stress evolution in Copper TSV's

Wilson, Chris; De Wolf, Ingrid; Vandevelde, Bart; De Messemaeker, Joke; Ablett, James M.; Redolfi, Augusto; Simons, Veerle; Beyne, Eric; Croes, Kristof (2012)

Interferometric approach ot solve microring resonance splitting in biosensor applications

Werquin, Sam; Bienstman, Peter (2012)

High temperature behaviour of GaN-on-Si high power MISHEMT devices

Wellekens, Dirk; Venegas, Rafael; Kang, Xuanwu; Zahid, Mohammed; Wu, Tian-Li; Marcon, Denis; Srivastava, Puneet; Van Hove, Marleen; Decoutere, Stefaan (2012)

A piezoelectric vibration harvester based on clamped-guided beams

Wang, Ziyang; Matova, Svetla; Elfrink, Rene; Jambunathan, Madhu; de Nooijer, Christine; van Schaijk, Rob; Vullers, Ruud (2012)

Study of piezoelectric vibration harvester based on clamped-guided beams under shock excitation

Wang, Ziyang; Elfrink, Rene; Renaud, Michael; Vullers, Ruud; van Schaijk, Rob (2012)

A meter-range UWB tranceiver chipset for around-the-head audio streaming

Wang, XiaoYan; Yu, Yikun; Busze, Benjamin; Pflug, Hans; Young, Alex; Huang, Xiongchuan; Zhou, Cui; Konijnenburg, Mario; Philips, Kathleen; de Groot, Harmke (2012)

Electron trap energy distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 layers on silicon

Wang, Mugwort; Badylevich, M.; Adelmann, Christoph; Swerts, Johan; Kittl, Jorge; Afanasiev, Valeri (2012)

Grating couplers in polymer with a thin Si3N4 layer embedded

Wang, Linghua; Li, YanLu; Porcel, Marco Garcia; Vermeulen, Diedrik; Han, Xiuyou; Wang, Linyan; Jian, Xigao; Zhao, Mingshan; Morthier, Geert (2012)

Optical biosensors utilizing polymer-based athermal mircoring resonators

Wang, Linghua; Han, Xiuyou; Gu, Huanlin; Lv, Huanlin; Cheng, J.; Teng, Jia; Ren, Jun; Wang, Jinyan; Jian, Xigao; Zhao, Mingshan (2012)

Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS

Wang, Bo; Tanaka, Shuji; Guo, Bin; Vereecke, Guy; Severi, Simone; Witvrouw, Ann; Wevers, Martine; De Wolf, Ingrid (2012)

Comparison of three methods to measure the internal pressure of empty MEMS packages

Wang, Bo; Tanaka, Shuji; De Coster, Jeroen; Severi, Simone; Witvrouw, Ann; Wevers, Martine; De Wolf, Ingrid (2012)

Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique

Waldron, Niamh; Wang, Gang; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Brammertz, Guy; Ong, Patrick; Winderickx, Gillis; Hellings, Geert; Eneman, Geert; Caymax, Matty; Meuris, Marc; Horiguchi, Naoto; Thean, Aaron (2012)

Integration of III-V on Si for high-mobility CMOS

Waldron, Niamh; Wang, G.; Nguyen, Ngoc Duy; Orzali, Tommaso; Merckling, Clement; Brammertz, Guy; Ong, Patrick; Winderickx, Gillis; Hellings, Geert; Eneman, Geert; Caymax, Matty; Meuris, Marc; Horiguchi, Naoto; Thean, Aaron (2012)

Conference contributions: Recent submissions

High-Q photonic crystal nanocavities on 300 mm SOI substrate fabricated by 193 nm immersion lithography ﻿

Carbon nanotube growth for high aspect ratio interconnect applications ﻿

Forward gate bias on-state stress on AlGaN/GaN MIS-HEMTs for power switching applications ﻿

Litho 1-litho 2 proximity differences for s LELE and LPLE double patterning processes ﻿

Critical material properties for pattern collapse mitigation ﻿

Monolithic integration of an active asynchronous voltage clamp with a 12V/3A full bridge synchronous rectifier ﻿

Integration of a k=2.3 spin-on polymer for the sub-28nm technology node ﻿

Comparison of x-ray diffraction, wafer curvature and Raman spectroscopy to evaluate the stress evolution in Copper TSV's ﻿

Interferometric approach ot solve microring resonance splitting in biosensor applications ﻿

High temperature behaviour of GaN-on-Si high power MISHEMT devices ﻿

A piezoelectric vibration harvester based on clamped-guided beams ﻿

Study of piezoelectric vibration harvester based on clamped-guided beams under shock excitation ﻿

A meter-range UWB tranceiver chipset for around-the-head audio streaming ﻿

Electron trap energy distribution in ALD Al2O3, LaAl4Ox, and GdyAl2-yO3 layers on silicon ﻿

Grating couplers in polymer with a thin Si3N4 layer embedded ﻿

Optical biosensors utilizing polymer-based athermal mircoring resonators ﻿

Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS ﻿

Comparison of three methods to measure the internal pressure of empty MEMS packages ﻿

Integration of InGaAs channel n-MOS devices on 200mm Si wafers using the aspect-ratio-trapping technique ﻿

Integration of III-V on Si for high-mobility CMOS ﻿