Modeling the Operation of Charge Trap Flash Memory: A Monte Carlo Approach to Carrier Distribution and (De)trapping

Abstract

We propose a Monte Carlo framework including (de)trapping to describe the non-equilibrium operation of charge trap flash memories. We thereby base the empirical carrier distribution that was proposed in recent studies on physical parameters. After an outline of the simulation procedure, we show how carrier trapping and detrapping is included. Finally, we illustrate the simulators' capabilities via simulations of the programming and retention operations, highlighting the insight into the carrier dynamics that this approach enables.