Browsing by author "Houssa, Michel"
Now showing items 1-20 of 282
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90nm W\Al2O3\TiW\Cu 1T1R CBRAM cell showing low-power, fast and disturb-free operation
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
A first-principles study of the structural and electronic properties of III-V/thermal oxide interfaces
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009) -
A simulation analysis of FIBL in decananometer double-gate MOSFETs with high-k gate dielectrics
Autran, J.L.; Munteanu, D.; Bescond, M.; Houssa, Michel; Said, A. (2005) -
A step towards a better understanding of silicon passivated (100) Ge p-channel
Pourtois, Geoffrey; Houssa, Michel; De Jaeger, Brice; Leys, Frederik; Kaczer, Ben; Martens, Koen; Caymax, Matty; Meuris, Marc; Groeseneken, Guido; Heyns, Marc (2007) -
A systematic study of various 2D materials in the light of defect formation and oxidation
Dabral, Ashish; Lu, A.K.A.; Chiappe, D.; Houssa, Michel; Pourtois, Geoffrey (2019) -
A theoretical study of the initial oxidation of the GaAs(001)-beta2(2x4) surface
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Stesmans, Andre; Meuris, Marc; Heyns, Marc (2009) -
A thermally stable and high-performance 90nm Al2O3\Cu-based 1T1R CBRAM cell
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
Ab-intio based electron-phonon scattering for 2D materials within the NEGF framework
Gaddemane, Gautam; Duflou, Rutger; Sankaran, Kiroubanand; Pourtois, Geoffrey; Houssa, Michel; Afzalian, Aryan (2021) -
Achievements and challenges for the electrical performance of MOSFETs with high-k gate dielectrics
Groeseneken, Guido; Pantisano, Luigi; Ragnarsson, Lars-Ake; Degraeve, Robin; Houssa, Michel; Kauerauf, Thomas; Roussel, Philippe; De Gendt, Stefan; Heyns, Marc (2004) -
Adsorption of molecular oxygen on the reconstructed beta2(2x4)-GaAs(001) surface: a first-principles study
Scarrozza, Marco; Pourtois, Geoffrey; Houssa, Michel; Caymax, Matty; Meuris, Marc; Heyns, Marc; Stesmans, Andre (2009) -
Advanced cleaning for the growth of ultrathin gate oxide
Mertens, Paul; Bearda, Twan; Houssa, Michel; Loewenstein, Lee; Cornelissen, Ingrid; De Gendt, Stefan; Kenis, Karine; Teerlinck, Ivo; Vos, Rita; Meuris, Marc; Heyns, Marc (1999) -
Advanced DFT-NEGF Transport Techniques for Novel 2-D Material and Device Exploration Including HfS2/WSe2 van der Waals Heterojunction TFET and WTe2/WS2 Metal/Semiconductor Contact
Afzalian, Aryan; Akhoundi, Elaheh; Gaddemane, Gautam; Duflou, Rutger; Houssa, Michel (2021) -
ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Heyns, Marc; Beckx, Stephan; Caymax, Matty; Claes, Martine; De Gendt, Stefan; Degraeve, Robin; Delabie, Annelies; Deweerd, Wim; Groeseneken, Guido; Hooker, Jacob; Houssa, Michel; Kwak, Dong Hwa; Lander, Rob; Lujan, Guilherme; Maes, Jan; Niwa, Masaaki; Pantisano, Luigi; Puurunen, R.; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Van Elshocht, Sven; Vandervorst, Wilfried (2004) -
Alternative gate insulator materials for future generation MOSFETs
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Jos; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, R.; Wilhelm, Rudi; Young, Edward; Zhao, Chao (2001) -
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces
Houssa, Michel; van den Broek, Bas; Scalise, Emilio; Pourtois, Geoffrey; Afanasiev, Valeri; Stesmans, Andre (2013) -
Analysis of high voltage TDDB measurements on Ta2O5/SiO2 stack
Degraeve, Robin; Kaczer, Ben; Houssa, Michel; Groeseneken, Guido; Heyns, Marc; Jeon, J. S.; Halliyal, A. (1999) -
Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CBRAM devices
Belmonte, Attilio; Celano, Umberto; Redolfi, Augusto; Fantini, Andrea; Muller, Robert; Vandervorst, Wilfried; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Analysis of the gate voltage fluctuations in ultra-thin gate oxides after soft breakdown
Houssa, Michel; Vandewalle, N.; Nigam, Tanya; Ausloos, M.; Mertens, Paul; Heyns, Marc (1998) -
Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
Schoenaers, Ben; Leonhardt, Alessandra; Nalin Mehta, Ankit; Stesmans, Andre; Chiappe, Daniele; Asselberghs, Inge; Radu, Iuliana; Huyghebaert, Cedric; De Gendt, Stefan; Houssa, Michel; Afanas'ev, Valeri V. (2020) -
Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Eneman, Geert; Delabie, Annelies; Van Elshocht, Sven; De Jaeger, Brice; Nicholas, Gareth; Martens, Koen; Brunco, David; Zimmerman, Paul; Houssa, Michel; Pourtois, Geoffrey; Kaczer, Ben; Leys, Frederik; Winderickx, Gillis; Huyghebaert, Cedric; Terzieva, Valentina; Loo, Roger; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007)