Resolving nanoscale composition fluctuations and defects in advanced interconnects: a crucial step to comprehend thin film resistivity.

Abstract

With the introduction of new materials in the interconnect domain, we need to screen and control a broader range of material properties down to the (sub)nanometer length scale to realize low resistivity. This work will demonstrate how we can leverage Atom Probe Tomography and Positron Annihilation Spectroscopy for that purpose, as these methods allow to measure the spatially resolved composition and to identify point defects, respectively. The potential of each method will be highlighted by curated application examples, complemented with a brief introduction of each technique.