Browsing Articles by imec author "161047720509463b8eb08eda56887779c992df2a"
Now showing items 1-20 of 171
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45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Mitsuhashi, Riichirou; Yamamoto, Kazuhiko; Hayashi, S.; Rothschild, Aude; Kubicek, Stefan; Veloso, Anabela; Van Elshocht, Sven; Jurczak, Gosia; De Gendt, Stefan; Biesemans, Serge; Niwa, M. (2005) -
A consistent model for oxide trap profiling with the trap spectroscopy by charge injection and sensing (TSCIS) technique
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Simoen, Eddy; Arreghini, Antonio; Jurczak, Gosia; Van Houdt, Jan; Groeseneken, Guido (2010) -
A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node
Collaert, Nadine; Dixit, Abhisek; Goodwin, Michael; Kottantharayil, Anil; Rooyackers, Rita; Degroote, Bart; Leunissen, Peter; Veloso, Anabela; Jonckheere, Rik; De Meyer, Kristin; Jurczak, Gosia; Biesemans, Serge (2004-08) -
A novel PEALD tunnel dielectric for three-dimensional non-volatile charge-trapping technology
Cacciato, Antonio; Breuil, Laurent; Dekkers, Harold; Zahid, Mohammed; Kar, Gouri Sankar; Everaert, Jean-Luc; Schoofs, Geert; Shi, Qixian; Van den Bosch, Geert; Jurczak, Gosia; Debusschere, Ingrid; Van Houdt, Jan; Cockburn, Andrew; Date, Lucien; Xa, Li Qun; Le, Maggie; Lee, Won (2011) -
A novel trapping/detrapping model for defect profiling in high-k materials using the two-pulse capacitance-voltage technique
Ruiz Aguado, Daniel; Govoreanu, Bogdan; Zhang, W.D.; Jurczak, Gosia; De Meyer, Kristin; Van Houdt, Jan (2010) -
A thermally stable and high-performance 90nm Al2O3\Cu-based 1T1R CBRAM cell
Belmonte, Attilio; Kim, Woosik; Chan, BT; Heylen, Nancy; Fantini, Andrea; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2013) -
Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: effects of oxide phases, stoichiometry and dopant concentrations
Liang, Zhao; Clima, Sergiu; Magyari-Köpe, Blanka; Jurczak, Gosia; Nishi, Yoshio (2015) -
Accurate fin patterning in emerging devices for 32nm and beyond
Snoeckx, Koen; Rooyackers, Rita; Jurczak, Gosia; Dixit, Abhisek (2007-07) -
Achieving low-VT Ni-FUSI CMOS via Lanthanide incorporation in the gate stack
Veloso, Anabela; Yu, HongYu; Lauwers, Anne; Chang, Shou-Zen; Adelmann, Christoph; Onsia, Bart; Demand, Marc; Brus, Stephan; Vrancken, Christa; Singanamalla, Raghunath; Lehnen, Peer; Kittl, Jorge; Kauerauf, Thomas; Vos, Rita; O'Sullivan, Barry; Van Elshocht, Sven; Mitsuhashi, Riichirou; Whittemore, G.; Yin, K.M.; Niwa, Masaaki; Hoffmann, Thomas; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2008) -
Advanced CMOS device technologies for 45nm node and below
Veloso, Anabela; Hoffmann, Thomas; Lauwers, Anne; Yu, HongYu; Severi, Simone; Augendre, Emmanuel; Kubicek, Stefan; Verheyen, Peter; Collaert, Nadine; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007) -
Advanced PMOS device architecture for highly-doped ultra-shallow junctions
Surdeanu, Radu; Pawlak, Bartek; Lindsay, Richard; Van Dal, Mark; Doornbos, Gerben; Dachs, C.J.J.; Ponomarev, Youri; Loo, Josine; Cubaynes, Florence; Henson, Kirklen; Verheijen, M.A.; Kaiser, M.; Pagès, Xavier; Stolk, Peter; Jurczak, Gosia (2004) -
Advantages of different source/drain engineering on scaled UTBOX FD SOI nMOSFETs at high temperature operation
Nicoletti, Talitha; Dos Santos, Sara; Martino, Joao A.; Aoulaiche, Marc; Veloso, Anabela; Jurczak, Gosia; Simoen, Eddy; Claeys, Cor (2014) -
All-nanocellulose nonvolatile resistive memory
Celano, Umberto; Nagashima, Kazuki; Hirotaka, Koga; Masaya, Nogi; Fuwei, Zhuge; Gang, Meng; Yong, He; De Boeck, Jo; Jurczak, Gosia; Vandervorst, Wilfried; Yanagida, Takeshi (2016) -
Analysis of complementary RRAM switching
Wouters, Dirk; Zhang, Leqi; Fantini, Andrea; Degraeve, Robin; Goux, Ludovic; Chen, Yangyin; Govoreanu, Bogdan; Kar, Gouri Sankar; Groeseneken, Guido; Jurczak, Gosia (2012) -
Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in Al2O3/Cu-based CBRAM devices
Belmonte, Attilio; Celano, Umberto; Redolfi, Augusto; Fantini, Andrea; Muller, Robert; Vandervorst, Wilfried; Houssa, Michel; Jurczak, Gosia; Goux, Ludovic (2015) -
Analysis of the parasitic S/D resistance in multiple-gate FETs
Dixit, Abhisek; Kottantharayil, Anil; Collaert, Nadine; Goodwin, Michael; Jurczak, Gosia; De Meyer, Kristin (2005) -
Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy
Eyben, Pierre; Alvarez, David; Jurczak, Gosia; Rooyackers, Rita; De Keersgieter, An; Augendre, Emmanuel; Vandervorst, Wilfried (2004-01) -
Asymmetry and switching phenomenology in TiN\(Al2O3)\HfO2\Hf systems
Goux, Ludovic; Fantini, Andrea; Govoreanu, Bogdan; Kar, Gouri Sankar; Clima, Sergiu; Chen, Yangyin; Degraeve, Robin; Wouters, Dirk; Pourtois, Geoffrey; Jurczak, Gosia (2012-08) -
Atomic layer deposition of gadolinium aluminate layers using Gd(iPrCp)3, TMA, and O3 or H2O
Adelmann, Christoph; Pierreux, Dieter; Swerts, Johan; Dewulf, Daan; Hardy, An; Tielens, Hilde; Franquet, Alexis; Brijs, Bert; Moussa, Alain; Conard, Thierry; Van Bael, Marlies; Maes, Jan; Jurczak, Gosia; Kittl, Jorge; Van Elshocht, Sven (2010) -
Atomic layer deposition of ruthenium thin films from (ethylbenzyl) (1-ethyl-1,4-cyclohexadienyl) Ru: process characteristics, surface chemistry, and film properties
Popovici, Mihaela Ioana; Groven, Benjamin; Marcoen, Kristof; Phung, Quan; Dutta, Shibesh; Swerts, Johan; Meersschaut, Johan; Van den Berg, Jaap; Franquet, Alexis; Moussa, Alain; Vanstreels, Kris; Lagrain, Pieter; Bender, Hugo; Jurczak, Gosia; Van Elshocht, Sven; Delabie, Annelies; Adelmann, Christoph (2017)