Browsing Articles by imec author "e5cba79eb3f5135da95e4f9220ff718e8105ec37"
Now showing items 1-10 of 10
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A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
Effective electrical passivation of Ge(100) for HfO2 gate dielectric layers using O2 plasma
Xie, Qi; Deduytsche, Davy; Schaekers, Marc; Caymax, Matty; Delabie, Annelies; Qu, Xin-Ping; Detavernier, Christophe (2011) -
Effective reduction of fixed charge densities in germanium based metal-oxide-semiconductor devices
Deng, Shaoren; Xie, Qi; Deduytsche, Davy; Schaekers, Marc; Lin, Dennis; Caymax, Matty; Delabie, Annelies; Van den Berghe, Sven; Qu, Xinping; Detavernier, Christophe (2011) -
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Kaczer, Ben; Xie, Qi; Maes, Jan Willem; Tang, Fu; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2020) -
Germanium surface passivation and atomic layer deposition of high- k dielectrics - a tutorial review on Ge-based MOS capacitors
Xie, Qi; Deng, Shaoren; Schaekers, Marc; Lin, Dennis; Caymax, Matty; Delabie, Annelies; Qu, Xin-Ping; Jiang, Yu-long; Deduytsche, Davy; Detavernier, Christophe (2012) -
High-performance Ge MOS capacitors by O2 plasma passivation and O2 ambient annealing
Xie, Qi; Deng, Shaoren; Schaekers, Marc; Lin, Dennis; Caymax, Matty; Delabie, Annelies; Jiang, Yu-long; Qu, Xin-Pin; Deduytsche, Davy; Detavemier, Christophe (2011) -
Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
Xie, Qi; Deduytsche, Davy; Schaekers, Marc; Caymax, Matty; Delabie, Annelies; Qu, Xin-Ping; Detavernier, Christophe (2010) -
Semiconductor-metal transition in thin VO2 films grown by ozone based atomic layer deposition
Rampelberg, Geert; Schaekers, Marc; Martens, Koen; Xie, Qi; Deduytsche, Davy; De Schutter, Bob; Blasco, Nicolas; Kittl, Jorge; Detavernier, Christophe (2011) -
Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps
Vais, Abhitosh; Lin, Dennis; Dou, Chunmeng; Martens, Koen; Ivanov, Tsvetan; Xie, Qi; Tang, Fu; Givens, Michael; Maes, Jan; Collaert, Nadine; Raskin, Jean-Pierre; De Meyer, Kristin; Thean, Aaron (2015) -
TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer
Xie, Qi; Musschoot, Jan; Schaekers, Marc; Caymax, Matty; Delabie, Annelies; Lin, Dennis; Qu, Xin-Ping; Jiang, Yu-Long; Van den Berghe, Sven; Detavernier, Christophe (2011)