Browsing Presentations by imec author "3ce6c010d34b598716a9ed1f3c90491ed8a56850"
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H2/D2 isotopic effect on negative bias temperature instabilities in SiOx/HfSiON/TaN gate stacks
Houssa, Michel; Aoulaiche, Marc; Stesmans, Andre; De Gendt, Stefan; Groeseneken, Guido; Heyns, Marc (2005) -
HfO2 high-k gate dielectrics on germanium by molecular beam deposition
Dimoulas, G.; Mavrou, G.; Vellianitis, G.; Evangelou, E.; Boukos, N.; Travlos, A.; Houssa, Michel; Caymax, Matty (2004) -
High k dielectric materials prepared by atomic layer CVD
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Guido; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, Wilfried; Wilhelm, Rudi; Yang, E.; Zhao, Chao (2001) -
High temperature grazing incidence XRD study on in-situ crystallization in ultra-thin oxide films
Zhao, Chao; Roebben, G.; Young, Edward; Bender, Hugo; Houssa, Michel; Naili, Mohamed; De Gendt, Stefan (2000) -
Impact of nitridation on recoverable and permanent NBTI degradation in high-k/metal-gate pMOSFETs
Aoulaiche, Marc; Kaczer, Ben; Roussel, Philippe; Houssa, Michel; De Gendt, Stefan; Maes, Herman; Groeseneken, Guido (2008) -
Influence of pre and post process conditions on the composition of thin Si3Ni4 thin films (3nm) studied by XPS and TOFSIMS
Conard, Thierry; De Witte, Hilde; Vandervorst, Wilfried; Houssa, Michel; Heyns, Marc; Pomarede, C.; Werkhoven, Chris (1999) -
Molecular beam epitaxy for advanced gate stack materials and processes
Locquet, Jean-Pierre; Marchiori, Chiara; Sousa, M.; Siegwart, H.; Caimi, D.; Fompeyrine, Jean; Pantisano, Luigi; Claes, Martine; Conard, Thierry; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Furukawa, Yukiko; Seo, J.W.; dimoulas, A. (2005) -
MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Pantisano, Luigi; Conard, Thierry; Claes, Martine; Demand, Marc; Deweerd, Wim; De Gendt, Stefan; Heyns, Marc; Houssa, Michel; Aoulaiche, Marc; Lujan, Guilherme; Ragnarsson, Lars-Ake; Rohr, Erika; Schram, Tom; Hooker, Jacob; Rittersma, Chris; Fompereyne, Jean; Locquet, Jean-Pierre; dimoulas, A. (2005) -
Reaction-dispersive H+ transport model for NBTI in pMOSFETs
Houssa, Michel; Aoulaiche, Marc; De Gendt, Stefan; Stesmans, Andre; Groeseneken, Guido; Heyns, Marc (2004) -
Surface cleaning issues in thin-oxide technology
Mertens, Paul; Bearda, Twan; Houssa, Michel; Loewenstein, Lee; Teerlinck, Ivo; De Gendt, Stefan; Vos, Rita; Kenis, Karine; Naili, Mohamed; Heyns, Marc (1999) -
Technology and reliability aspects of ultra-thin silicon dioxide layers
Heyns, Marc; Nigam, Tanya; Degraeve, Robin; Mertens, Paul; Schaekers, Marc; Bearda, Twan; De Gendt, Stefan; Groeseneken, Guido; Maes, Herman; Claes, Martine; Houssa, Michel; Vandewalle, N.; Ausloos, M. (1999)