Browsing by Author "Badenes, Gonçal"
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Publication 0.13µm CMOS technology with optimized poly-Si / NO-oxide gate stack
Proceedings paper1999, ULSI Process Integration. Proceedings of the First International Symposium, 17/10/1999, p.193-202Publication 60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
Oral presentation2001, RADECS; 10-14 September 2001; Grenoble, France.Publication A high performance 0.18µm elevated source/drain technology with improved manufacturability
Proceedings paper1999, ESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference, 13/09/1999, p.636-639Publication A high performance of 0.18μm CMOS technology designed for manufacturability
Proceedings paper1997, ESSDERC '97: Proceedings of the 27th European Solid-State Device Research Conference, 22/09/1997, p.404-407Publication A new dummy-free shallow trench isolation concept for mixed-signal applications
Publication A new dummy-free shallow trench isolation concept for mixed-signal applications
Publication A novel approach for the elimination of the pattern density dependence of CMP for shallow trench isolation
Proceedings paper1998, Proceedings of the 3rd International Chemical-Mechanical-Planarization for ULSI Multilevel Interconnection Conference - CMP-MIC, p.313-318Publication A simulation evaluation of 100 nm CMOS device performance
; Skotnicki, T.Proceedings paper2001, Proceedings of the International Conference on Simulation of Semiconductor Physics and Processes - SISPAD, 5/09/2001, p.288-291Publication Active area oxidation during the densification of shallow trench isolation for sub-0.25 micron CMOS
Publication Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering
Proceedings paper2001, Proceedings of the 31st European Solid-State Device Research Conference, 11/09/2001, p.115-118Publication Challenges for deep-submicron CMOS integration
Publication Characteristics of low-energy nitrogen ion-implanted oxide and NO-annealed gate dielectrics
Journal article2004, Solid-State Electronics, (48) 9, p.1687-1690Publication Characterization and residue elimination of hot aluminum etching in a transformer coupled plasma etcher
Publication Controlling STI-related parasitic conduction in 90nm CMOS and below
Proceedings paper2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.507-510Publication Deep submicron CMOS scaling challenges
Publication Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
Proceedings paper1999, International Electron Devices Meeting. Technical digest; 5-8 Dec. 1999; Washington, D.C., USA., p.357-360Publication Determination of the film thickness of SIMOX substrates using simple calibration curves
Publication Development of a RF large signal MOSFET model, based on an equivalent circuit, and comparison with the BSIM3v3 compact model
Journal article2002, Solid-State Electronics, (46) 3, p.353-360Publication Diode analysis of high-energy boron implantation-induced P-well defects
Journal article2001, Journal of the Electrochemical Society, (148) 9, p.G507-G512Publication Direct measurement of Leff and channel profile in MOSFETs using 2-D carrier profiling techniques
Proceedings paper1998, Technical Digest International Electron Devices Meeting - IEDM, 6/12/1998, p.559-562