Browsing by Author "Banerjee, Kaustuv"
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Publication A comprehensive variability study of doped HfO2 FeFET for memory applications
Proceedings paper2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.85-88Publication A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash
Journal article2022, IEEE ELECTRON DEVICE LETTERS, (43) 12, p.2085-2088Publication Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 5, p.2568-2574Publication Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric
Proceedings paper2021, IEEE International Integrated Reliability Workshop (IIRW) / 4th Reliability Experts Forum, OCT 04-29, 2021, p.57-60Publication At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells
Proceedings paper2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.97-100Publication Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory
Journal article2023, NANOMATERIALS, (9) 10, p.Art. 2104Publication Controllable p-Type Doping of 2D WSe2 pFET by Engineered Surface Charge Transfer Doping With Metal Co-Seeding
; ; ; ; De la Rosa, Cesar Javier LockhartJournal article2025, IEEE ELECTRON DEVICE LETTERS, (46) 12, p.2365-2368Publication Defect profiling in FEFET Si:HfO2 layers
Journal article2020, Applied Physics Letters, (117) 20, p.203504Publication Demonstration of 64 Conductance States and Large Dynamic Range in Sidoped HfO2 FeFETs under Neuromorphic Computing Operations
Proceedings paper2022, 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 18-21 April 2022Publication Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
Proceedings paper2022, International Conference on IC Design and Technology (ICICDT), SEP 21-23, 2022, p.88-88Publication Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Meal-Ferroelectric-Metal Capacitors
Journal article2022, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4744-4749Publication Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
Journal article2021, APPLIED PHYSICS LETTERS, (118) 9, p.092902Publication Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices
Proceedings paper2020, 2020 IEEE International Memory Workshop (IMW), 17/05/2020Publication Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride
Journal article2023, ACS APPLIED ELECTRONIC MATERIALS, (5) 2, p.858-864Publication Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance
Proceedings paper2021, 26th Silicon Nanoelectronics Workshop, JUN 13, 2021, p.21-22Publication Ferroelectric La-Doped ZrO2/HfxZr1-xO2 Bilayer Stacks with Enhanced Endurance
Journal article2021, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, (15) 5, p.2100033Publication Ferroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication First demonstration of ferroelectric Si:Hf0(2) based 3D FE-FET with trench architecture for dense non-volatile memory application
; ; ; ; ; Proceedings paper2021, IEEE International Memory Workshop (IMW), MAY 16-19, 2021, p.32-35Publication First demonstration of sub-12 nm gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices
Proceedings paper2021, 2021 Symposium on VLSI Technology, 13/06/2021
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