Browsing by Author "Banerjee, Kaustuv"
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Publication A comprehensive variability study of doped HfO2 FeFET for memory applications
Proceedings paper2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.85-88Publication A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash
Journal article2022, IEEE ELECTRON DEVICE LETTERS, (43) 12, p.2085-2088Publication Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors
Journal article2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 5, p.2568-2574Publication Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric
Proceedings paper2021, IEEE International Integrated Reliability Workshop (IIRW) / 4th Reliability Experts Forum, OCT 04-29, 2021, p.57-60Publication At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells
Proceedings paper2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.97-100Publication Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory
Journal article2023, NANOMATERIALS, (9) 10, p.Art. 2104Publication Defect profiling in FEFET Si:HfO2 layers
Journal article2020, Applied Physics Letters, (117) 20, p.203504Publication Demonstration of 64 Conductance States and Large Dynamic Range in Sidoped HfO2 FeFETs under Neuromorphic Computing Operations
Proceedings paper2022-04-18, 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 18-21 April 2022Publication Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
Proceedings paper2022, International Conference on IC Design and Technology (ICICDT), SEP 21-23, 2022, p.88-88Publication Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Meal-Ferroelectric-Metal Capacitors
Journal article2022-07-12, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4744-4749Publication Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia
Journal article2021, APPLIED PHYSICS LETTERS, (118) 9, p.092902Publication Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices
Proceedings paper2020, 2020 IEEE International Memory Workshop (IMW), 17/05/2020Publication Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride
Journal article2023, ACS APPLIED ELECTRONIC MATERIALS, (5) 2, p.858-864Publication Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance
Proceedings paper2021, 26th Silicon Nanoelectronics Workshop, JUN 13, 2021, p.21-22Publication Ferroelectric La-Doped ZrO2/HfxZr1-xO2 Bilayer Stacks with Enhanced Endurance
Journal article2021, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, (15) 5, p.2100033Publication Ferroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication First demonstration of ferroelectric Si:Hf0(2) based 3D FE-FET with trench architecture for dense non-volatile memory application
; ; ; ; ; Proceedings paper2021, IEEE International Memory Workshop (IMW), MAY 16-19, 2021, p.32-35Publication First demonstration of sub-12 nm gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices
Proceedings paper2021, 2021 Symposium on VLSI Technology, 13/06/2021Publication High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition
Journal article2022, ACS APPLIED ELECTRONIC MATERIALS, (4) 4, p.1823-1831