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Browsing by Author "Banerjee, Kaustuv"

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    A comprehensive variability study of doped HfO2 FeFET for memory applications

    Ronchi, Nicolo  
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    Ragnarsson, Lars-Ake  
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    Celano, Umberto  
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    Kaczer, Ben  
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    Kaczmarek, Jakub  
    Proceedings paper
    2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.85-88
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    A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash

    Ramesh, Siva  
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    Banerjee, Kaustuv  
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    Opsomer, Karl  
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    Rachita, Iuliana  
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    Bastos, Joao  
    Journal article
    2022, IEEE ELECTRON DEVICE LETTERS, (43) 12, p.2085-2088
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    Analysis of Wake-Up Reversal Behavior Induced by Imprint in La:HZO MFM Capacitors

    Lee, Sumi  
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    Ronchi, Nicolo  
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    Bizindavyi, Jasper  
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    Popovici, Mihaela Ioana  
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    Banerjee, Kaustuv  
    Journal article
    2023, IEEE TRANSACTIONS ON ELECTRON DEVICES, (70) 5, p.2568-2574
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    Antenna effect in 65nm NMOS devices with 9.5nm thick HfOx gate dielectric

    Hiblot, Gaspard  
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    O'Sullivan, Barry  
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    Ronchi, Nicolo  
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    Banerjee, Kaustuv  
    Proceedings paper
    2021, IEEE International Integrated Reliability Workshop (IIRW) / 4th Reliability Experts Forum, OCT 04-29, 2021, p.57-60
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    At the Extreme of 3D-NAND Scaling: 25 nm Z-Pitch with 10 nm Word Line Cells

    Rachidi, Sana  
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    Arreghini, Antonio  
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    Verreck, Devin  
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    Donadio, Gabriele Luca  
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    Banerjee, Kaustuv  
    Proceedings paper
    2022, 14th IEEE International Memory Workshop (IMW), MAR 15-18, 2022, p.97-100
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    Capacitor-less, Long-Retention (> 400s) DRAM Cell Paving the Way towards Low-Power and High-Density Monolithic 3D DRAM

    Belmonte, Attilio  
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    Oh, Hyungrock  
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    Rassoul, Nouredine  
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    Donadio, Gabriele Luca  
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    Mitard, Jerome  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020
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    Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

    Chang, Ting-Yu
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    Wang, Kuan-Chi
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    Liu, Hsien-Yang
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    Hseun, Jing-Hua
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    Peng, Wei-Cheng
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    Ronchi, Nicolo  
    Journal article
    2023, NANOMATERIALS, (9) 10, p.Art. 2104
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    Defect profiling in FEFET Si:HfO2 layers

    O'Sullivan, Barry  
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    Putcha, Vamsi  
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    Izmailov, Roman
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    Afanas'ev, Valeri V.
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    Simoen, Eddy  
    Journal article
    2020, Applied Physics Letters, (117) 20, p.203504
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    Demonstration of 64 Conductance States and Large Dynamic Range in Sidoped HfO2 FeFETs under Neuromorphic Computing Operations

    Wang, Yu-Yun
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    Wang, Kuang-Chi
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    Wu, Cheng-Hung
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    Chang, Ting-Yu
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    Ronchi, Nicolo  
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    Banerjee, Kaustuv  
    Proceedings paper
    2022-04-18, 2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 18-21 April 2022
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    Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control

    Subhechha, Subhali  
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    Rassoul, Nouredine  
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    Belmonte, Attilio  
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    Hody, Hubert  
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    Dekkers, Harold  
    Proceedings paper
    2022, International Conference on IC Design and Technology (ICICDT), SEP 21-23, 2022, p.88-88
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    Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Meal-Ferroelectric-Metal Capacitors

    Walke, Amey  
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    Popovici, Mihaela Ioana  
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    Banerjee, Kaustuv  
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    Clima, Sergiu  
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    Kumbhare, Pankaj  
    Journal article
    2022-07-12, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4744-4749
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    Elucidating possible crystallographic origins of wake-up mechanisms in ferroelectric hafnia

    McMitchell, Sean  
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    Clima, Sergiu  
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    Ronchi, Nicolo  
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    Banerjee, Kaustuv  
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    Celano, Umberto  
    Journal article
    2021, APPLIED PHYSICS LETTERS, (118) 9, p.092902
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    Endurance of ferroelectric La-doped HfO2 for SFS gate-stack memory devices

    Ronchi, Nicolo  
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    McMitchell, Sean  
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    Min, Jinhong  
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    Banerjee, Kaustuv  
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    Van den Bosch, Geert  
    Proceedings paper
    2020, 2020 IEEE International Memory Workshop (IMW), 17/05/2020
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    Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride

    McMitchell, Sean  
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    Walke, Amey  
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    Banerjee, Kaustuv  
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    Mertens, Sofie  
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    Piao, Xiaoyu  
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    Mao, Ming  
    Journal article
    2023, ACS APPLIED ELECTRONIC MATERIALS, (5) 2, p.858-864
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    Ferroelectric FET with Gd-doped HfO2: A Step Towards Better Uniformity and Improved Memory Performance

    Ronchi, Nicolo  
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    Ragnarsson, Lars-Ake  
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    Breuil, Laurent  
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    Banerjee, Kaustuv  
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    McMitchell, Sean  
    Proceedings paper
    2021, 26th Silicon Nanoelectronics Workshop, JUN 13, 2021, p.21-22
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    Ferroelectric La-Doped ZrO2/HfxZr1-xO2 Bilayer Stacks with Enhanced Endurance

    Popovici, Mihaela Ioana  
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    Walke, Amey  
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    Banerjee, Kaustuv  
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    Ronchi, Nicolo  
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    Meersschaut, Johan  
    Journal article
    2021, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, (15) 5, p.2100033
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    Ferroelectric Switching in FEFET: Physics of the Atomic Mechanism and Switching Dynamics in HfZrOx, HfO2 with Oxygen Vacancies and Si dopants

    Clima, Sergiu  
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    O'Sullivan, Barry  
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    Ronchi, Nicolo  
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    Garcia Bardon, Marie  
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    Banerjee, Kaustuv  
    Proceedings paper
    2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020
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    First demonstration of ferroelectric Si:Hf0(2) based 3D FE-FET with trench architecture for dense non-volatile memory application

    Banerjee, Kaustuv  
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    Breuil, Laurent  
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    Milenin, Alexey  
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    Pak, Murat  
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    Stiers, Jimmy  
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    McMitchell, Sean  
    Proceedings paper
    2021, IEEE International Memory Workshop (IMW), MAY 16-19, 2021, p.32-35
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    First demonstration of sub-12 nm gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices

    Subhechha, Subhali  
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    Rassoul, Nouredine  
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    Belmonte, Attilio  
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    Delhougne, Romain  
    Proceedings paper
    2021, 2021 Symposium on VLSI Technology, 13/06/2021
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    High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition

    Popovici, Mihaela Ioana  
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    Walke, Amey  
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    Bizindavyi, Jasper  
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    Meersschaut, Johan  
    Journal article
    2022, ACS APPLIED ELECTRONIC MATERIALS, (4) 4, p.1823-1831
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