Browsing by Author "Chang, Vincent"

A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack

Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates

Anomalous positive-bias temperature instability of high-k/metal gate devices with Dy2O3 capping

Anomalous positive-bias temperature instability of high-k/metal gate nMOSFET devices with Dy2O3 capping

Demonstration of metal-gated low Vt n-MOSFETs using a Poly-Si/TaN/Dy2O3/SiON gate stack with a scaled EOT value

Effects of Al2O3 dielectric cap and nitridation on device performance, scalability, and reliability for advanced high-k/metal gate pMOSFET applications

Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal

Nitrogen profile and dielectric cap layer (Al2O3, Dy2O3, La2O3) engineering on Hf-silicate

Oxygen-vacancy-induced Vt shift in La-containing devices

Thermally-stable high effective work function TaCN and Ta2N films for pMOS metal gate applications