Browsing by Author "Claes, Gert"
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Publication Above-IC generic poly-SiGe thin film wafer level packaging and MEM device technology: application to accelerometers
; ; Proceedings paper2011, IEEE 24th International Conference on Micro Electro Mechanical Systems - MEMS, 23/01/2011, p.352-355Publication Design and characterization of thin SiGe membranes for MEMS packaging at wafer level
Proceedings paper2008, Semiconductor Advances for Future Electronics Workshop - SAFE, 27/11/2008, p.1-4Publication Enabling poly- SiGe MEMS scaling by improving anchor strength and resistance
Oral presentation2010, 36th International Conference on Micro and Nano Engineering - MNEPublication Enabling poly- SiGe MEMS scaling by improving anchor strength and resistance
Journal article2011, Microelectronic Engineering, (88) 8, p.2420-2423Publication Improvement of PECVD silicon–germanium crystallization for CMOS compatible MEMS applications
; ; ; ; Journal article2010, Journal of the Electrochemical Society, (157) 2, p.D103-D106Publication Improvement of the poly-SiGe electrode contact technology for MEMS
Journal article2010, Journal of Micromechanics and Microengineering, (20) 9, p.95029Publication Influence of the novel anchor design on the shear strength of poly-SiGe thin film wafer level packages
; ; ; Publication Poly-SiGe-based MEMS thin-film encapsulation
; ; ; Journal article2012, Journal of Microelectromechanical Systems, (110) 120, p.21-1Publication Poly-silicon germanium thin-film package: study of structural features enabling CMOS-MEMS integration
Claes, GertPHD thesis2011-07Publication Polycrystalline silicon-germanium electrode contact technology improvement for MEMS applications
Proceedings paper2010, Microelectromechanical Systems - Materials and Devices III, 30/11/2009, p.1222-DD04-03Publication Processing and characterisation of poly-SiGe micromachined resonators and comparison with SOI
Proceedings paper2008, Eurosensors XXII, 7/09/2008, p.831-834Publication Simultaneous optimization of the material properties, uniformity and deposition rate of polycrystalline CVD And PECVD silicon-germanium layers for MEMS applications
Meeting abstract2008, 214th ECS Meeting, 12/10/2008, p.2420Publication Simultaneous optimization of the material properties, uniformity and deposition rate of polycrystalline CVD And PECVD silicon-germanium layers for MEMS applications
Proceedings paper2008, SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices, 12/10/2008, p.353-364Publication Stacked boron doped poly-crystalline silicon-germanium layers: an excellent MEMS structural layer
Proceedings paper2008, Passive and Electromechanical Materials and Integration, 24/03/2008, p.1075-J05-02