Browsing by Author "Cretu, B."
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Publication Assessment of temperature dependence of the low frequency noise in unstrained and strained FinFETs
Proceedings paper2011, 21st International Conference on Noise and Fluctuations - ICNF, 12/06/2011, p.131-134Publication DC and low a frequency noise analysis of p channel gate all around vertically stacked silicon nanosheets
Journal article2022, SOLID-STATE ELECTRONICS, 194, p.108360Publication DC and noise performances of SOI FinFETs at very low temperature
Proceedings paper2012, 8th European Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 24/01/2012, p.13-14Publication Detailed low frequency noise assessment on GAA NW n-channel FETs
Journal article2021, SOLID-STATE ELECTRONICS, 181, p.108029Publication High-temperature characterization of advanced strained nMUGFETs
;Talmat, Rachida ;Put, Sofie; ; ;Claeys, Cor ;Guo, W.Cretu, B.Proceedings paper2010, 6th Workshop on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 25/01/2010Publication Identification de niveaux pièges dans les oxydes de transistors MOS par des mesures de bruit basse-fréquence à différentes températures
Oral presentation2008, Workshop 'Oxydes Fonctionnels pour l'Intégration en Micro- et Nano-électronique'Publication Identification of Si film traps in p-channel SOI FinFETs using low temperature noise spectroscopy
Journal article2015, Solid-State Electronics, 112, p.1-6Publication Impact of cryogenic temperature operation on static and low frequency noise behaviors of FD UTBOX nMOSFETs
Proceedings paper2017, Joint International EUSOSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), 3/04/2017, p.95-98Publication Impact of strain and source/drain engineering on the low-frequency noise behaviour in n-channel Tri-Gate FinFETs
; ;Cretu, B. ;Routoure, J.-M. ;Carin, R.; ; Journal article2008, Solid-State Electronics, (52) 12, p.1889-1894Publication In-depth static and low frequency noise assessment of p-channel gate-all-around vertically stacked silicon nanosheets
Journal article2023, SOLID-STATE ELECTRONICS, (201) March, p.Art. 108591Publication Is there a limit when the access resistance impact on the extraction of key GAA NS FETs devices parameters can (not) be avoided?
Journal article2023, SOLID-STATE ELECTRONICS, (209) November, p.Art. 108711Publication Low frequency noise characterization in n-channel FinFETs
Journal article2012, Solid-State Electronics, (70) 1, p.20-26Publication Low frequency noise spectroscopy in advanced nFinFETs
Proceedings paper2011, 7th Workshop of the Thematic Network on Silicon-on-Insulator Technology, Devices and Circuits - EUROSOI, 17/01/2011, p.55-56Publication Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors
Journal article2007, Journal of Applied Physics, (101) 10, p.104511Publication Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack
Journal article2007, IEEE Electron Device Letters, (28) 4, p.288-291Publication Low-frequency noise behavior at low temperature (80K-300K) of silicon passivated Ge pMOSFETs with high-K metal gate stack
Proceedings paper2007, Noise and Fluctuations: 19th International Conference, 9/09/2007, p.29-32Publication Low-frequency noise behavior in p-channel SOI FinFETs processed with different strain techniques
Proceedings paper2009, 20th International Conference on Noise and Fluctuations - ICNF, 14/06/2009, p.298-298Publication Novel Y-function based strategy for parameter extraction in S/D asymmetric architecture devices and low frequency noise characterization in GAA Si VNW pMOSFETs
Journal article2023, SOLID-STATE ELECTRONICS, (209) November, p.Art. 108709Publication Secondary impact ionization and device aging in deep submicron MOS devices with various transistor architectures
;Marchand, B. ;Cretu, B. ;Ghibaudo, G. ;Balestra, F. ;Blachier, D. ;Leroux, C.Deleonibus, S.Journal article2002, Solid-State Electronics, (46) 3, p.337-342Publication Static and low frequency noise characterization in standard and rotated UTBOX nMOSFETs
Proceedings paper2015, Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon - EUROSOI-ULIS, 26/01/2015, p.237-240