Browsing by Author "De Messemaeker, Joke"
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Publication A photo-elastic microscopy study of the temperature dependecy of stress induced by through silicon vias in silicon
Journal article2017, Physica Status Solidi C, (14) 7, p.1700028Publication Co-Sn intermetallic compoundsfor potential integration in 3D interconnects
Meeting abstract2014, 23rd Conference on Materials for Advanced Metallization - MAM, 2/03/2014Publication Comparison of x-ray diffraction, wafer curvature and Raman spectroscopy to evaluate the stress evolution in Copper TSV's
Proceedings paper2012, IEEE International Interconnect Technology Conference - IITC, 4/06/2012Publication Composite polymer core – ceria shell abrasive particles during silicon oxide CMP
Proceedings paper2007, Advances and Challenges in Chemical Mechanical Planarization, 8/04/2007, p.C8.4Publication Correlation between Cu microstructure and TSV Cu pumping
Proceedings paper2014, IEEE Electronic Components and Technology Conference, 27/05/2014, p.613-619Publication Degradation of Cu6Sn5 intermetallic compound by pore formation in solid-liquid interdiffusion Cu/Sn microbump interconnects
Journal article2014, Microelectronic Engineering, 117, p.26-34Publication Diffusion growth of Cu3Sn phase in the bump and thin film Cu/Sn structures
Journal article2012, Microelectronics Reliability, (52) 9_10, p.1971-197Publication Effect of test structure on electromigration characteristics in 3D-TSV stacked devices
Proceedings paper2014, Advanced Metallization Conference - ADMETA: 24th Asian Session, 22/10/2014Publication Effect of test structure on electromigration characteristics in 3D-TSV stacked devices
Journal article2015, Japanese Journal of Applied Physics, (54) 5S, p.05EE01Publication Electromigration behavior of 2μm sub-micron Cu/SiCN hybrid bonds
; ; ; ; ; Proceedings paper2019, IEEE International Interconnect Technology Conference (IITC 2019) and Materials for Advanced Metallization Conference (MAM 2019), 3/06/2019, p.8.4Publication Electromigration behavior of Cu/SiCN to Cu/SiCN hybrid bonds for 3D integrated circuits
; ; ; ; ; Proceedings paper2018, International Conference on Solid State Devices and Materials - SSDM, 11/09/2018, p.449-450Publication Impact of Cu TSVs on BEOL metal and dielectric reliability
Proceedings paper2014, International Reliability Physics Symposium - IRPS, 1/06/2014, p.3E.1.1-3E.1.5Publication Impact of oxide liner properties on TSV Cu pumping and TSV stress
Proceedings paper2015, IEEE International Reliability Physics Symposium - IRPS, 19/04/2015, p.4C.5Publication Impact of post-plating anneal and Through-Silicon Via dimensions on Cu pumping
Proceedings paper2013, 63rd Electronic Components and Technology Conference - ECTC, 28/05/2013, p.586-591Publication Impact of Through Silicon Vias on Front-End-of-Line performance after thermal cycling and thermal storage
Proceedings paper2012, IEEE International Reliability Physics Symposium- IRPS, 14/04/2012, p.2B-3Publication Impact of via density and passivation thickness on the mechanical integrity of advanced Back-End-Of-Line interconnects
Journal article2017, Microelectronics Reliability, 79, p.297-305Publication Interaction forces between a glass surface and ceria-modified PMMA-based abrasives for CMP measured by colloidal probe AFM
Journal article2008, Journal of the Electrochemical Society, (155) 4, p.H218-H223Publication Microstructure simulation of grain growth in Cu Through Silicon Via using phase-field modeling
Proceedings paper2014, 15th Int. Conf. Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - EuroSimE, 7/04/2014, p.1-4Publication Microstructure simulation of grain growth in Cu through silicon vias using phase-field modeling
Journal article2015, Microelectronics Reliability, (55) 5, p.765-770
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