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Browsing by Author "De Vos, Joeri"

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    3D stacking induced mechanical stress effects

    Cherman, Vladimir  
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    Van der Plas, Geert  
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    De Vos, Joeri  
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    Ivankovic, Andrej
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    Lofrano, Melina  
    Proceedings paper
    2014, IEEE 64th Electronic Components and Technology Conference - ECTC, 27/05/2014, p.309-315
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    A complementary high-voltage technology based on n-type CdSe:In and p-type Ge:Cu thin film transistors

    De Cubber, A. M.
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    De Smet, Herbert  
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    De Vos, Joeri  
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    Carchon, Nadine  
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    Van Calster, Andre  
    Journal article
    1996, IEEE Electron Device Letters, (17) 12, p.581-583
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    A fully planar stacked gate flash technology with T-shaped floating gate for increased cell coupling ratio

    De Vos, Joeri  
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    Haspeslagh, Luc  
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    Blomme, Pieter  
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    Demand, Marc  
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    Devriendt, Katia  
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    Vleugels, Frank  
    Proceedings paper
    2007, Proceedings 2nd International Conference on Memory Technology and Design - ICMTD, 7/05/2007, p.243-245
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    A highly reliable 1.4μm pitch via-last TSV module for wafer-to-wafer hybrid bonded 3D-SOC systems

    Van Huylenbroeck, Stefaan  
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    De Vos, Joeri  
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    El-Mekki, Zaid  
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    Jamieson, Geraldine  
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    Tutunjyan, Nina  
    Proceedings paper
    2019, 2019 IEEE 69th Electronic Components and Technology Conference (ECTC), 28/05/2019, p.1035-1040
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    A highly reliable 1×5μm via-last TSV module

    Van Huylenbroeck, Stefaan  
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    Li, Yunlong  
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    De Vos, Joeri  
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    Jamieson, Geraldine  
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    Tutunjyan, Nina  
    Proceedings paper
    2018, IEEE International Interconnect Technology Conference - IITC, 4/06/2018, p.94-96
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    A low-cost poly-sidewall erase HIMOSTM technology for 130-90nm embedded flash memories

    Van Houdt, Jan  
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    Haspeslagh, Luc  
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    Wellekens, Dirk  
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    De Vos, Joeri  
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    Hendrickx, Paul  
    Oral presentation
    2004, 20th IEEE Non-Volatile Semiconductor Memory Workshop - NVSMW
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    A new 2 isolated-bits/cell Flash memory device with self aligned split gate structure using ONO stacks for charge storage

    Breuil, Laurent  
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    Schuler, Franz
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    Haspeslagh, Luc  
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    Wellekens, Dirk  
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    De Vos, Joeri  
    Proceedings paper
    2003, 19th IEEE Nonvolatile Semiconductor Memory Workshop - NVSMW, 16/02/2003, p.46-47
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    A new scalable self-aligned dual-bit split-gate charge trapping memory device

    Breuil, Laurent  
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    Haspeslagh, Luc  
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    Blomme, Pieter  
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    Wellekens, Dirk  
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    De Vos, Joeri  
    Journal article
    2005, IEEE Trans. Electron Devices, (52) 10, p.2250-2257
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    A Study of SiCN Wafer-to-Wafer Bonding and Impact of Wafer Warpage

    Iacovo, Serena  
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    D'have, Koen  
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    Okudur, Oguzhan Orkut  
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    De Vos, Joeri  
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    Uhrmann, Thomas
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    Plach, Thomas
    Proceedings paper
    2023, IEEE 73rd Electronic Components and Technology Conference (ECTC), MAY 30-JUN 02, 2023, p.1410-1417
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    A study on power integrity in a 3D chip stack using dynamic power supply current emulation and power noise monitoring

    Araga, Yuuki
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    Miura, Ranto
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    Nagata, Makoto
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    Roda Neve, Cesar
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    De Vos, Joeri  
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    Van der Plas, Geert  
    Proceedings paper
    2014, Electronics System-Integration Technology Conference - ESTC, 16/09/2014, p.1-5
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    A study on substrate noise coupling among TSVs in 3D chip stack

    Araga, Yuuki
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    Nagata, Makoto
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    De Vos, Joeri  
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    Van der Plas, Geert  
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    Beyne, Eric  
    Journal article
    2018, IEICE Electronics Express, (15) 13, p.20180460
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    Advanced experimental Back-End-Of-Line (BEOL) stability test: measurements and simulations

    Vanstreels, Kris  
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    Cherman, Vladimir  
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    Gonzalez, Mario  
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    De Wolf, Ingrid  
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    Van der Plas, Geert  
    Journal article
    2015, Microelectronic Engineering, (137) 2015, p.54-58
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    Advanced experimental BEOL stability test: measurements and simulations

    Vanstreels, Kris  
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    Cherman, Vladimir  
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    Gonzalez, Mario  
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    De Wolf, Ingrid  
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    Van der Plas, Geert  
    Proceedings paper
    2014, Materials for Advanced Metallization Conference - MAM, 2/03/2013
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    Advances in SiCN-SiCN bonding with high accuracy wafer-to-wafer (W2W) stacking technology

    Peng, Lan  
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    Kim, Soon-Wook  
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    Iacovo, Serena  
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    Inoue, Fumihiro  
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    Phommahaxay, Alain  
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    Sleeckx, Erik  
    Proceedings paper
    2018, IEEE International Interconnect Technology Conference - IITC, 4/06/2018, p.985-992
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    An efficient bump pad design to mitigate the flip chip package induced stress

    Gonzalez, Mario  
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    De Vos, Joeri  
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    Van der Plas, Geert  
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    Beyne, Eric  
    Proceedings paper
    2015, InterPACK & ICNNM, 6/07/2015, p.1-7
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    Anomalous C-V inversion in TSV's: The problem and its cure

    Stucchi, Michele  
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    De Vos, Joeri  
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    Jourdain, Anne  
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    Li, Yunlong  
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    Van der Plas, Geert  
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    Croes, Kristof  
    Journal article
    2018, IEEE Transactions on Electron Devices, (65) 4, p.1473-1479
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    Backside illuminated hybrid FPA achieving low cross-talk combined with high QE

    De Munck, Koen  
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    Ramachandra Rao, Padmakumar
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    Minoglou, Kiki
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    De Vos, Joeri  
    Proceedings paper
    2011, International Image Sensor Workshop - IISW, 8/06/2011, p.P31
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    Backside Power Delivery With Relaxed Overlay for Backside Patterning Using Extreme Wafer Thinning and Molybdenum-Filled Slit Nano Through Silicon Vias

    Zhao, Peng  
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    Witters, Liesbeth  
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    Jourdain, Anne  
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    Stucchi, Michele  
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    Jourdan, Nicolas  
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    Maes, J. W.
    Journal article
    2024, IEEE TRANSACTIONS ON ELECTRON DEVICES, (71) 12, p.7963-7969
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    Characterization of bonding activation sequences to enable ultra-low Cu/SiCN wafer level hybrid bonding

    Iacovo, Serena
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    Peng, Lan
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    Nagano, Fuya
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    Uhrmann, Thomas
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    Burggraf, Jurgen
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    Fehkuhrer, Andreas
    Proceedings paper
    2021, IEEE 71st Electronic Components and Technology Conference (ECTC), JUN 01-JUL 04, 2021, p.2097-2104
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    Characterization of extreme Si thinning proces for wafer-to-wafer stacking

    Inoue, Fumihiro  
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    Jourdain, Anne  
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    De Vos, Joeri  
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    Peng, Lan  
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    Liebens, Maarten  
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    Armini, Silvia  
    Proceedings paper
    2016, IEEE 66th Electronic Components and Technology Conference - ECTC, 31/05/2016, p.2095-2102
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