Browsing by Author "Demeulemeester, Jelle"
- Results Per Page
- Sort Options
Publication Assessment of Ge1-xSnx alloys for strained Ge CMOS devices
Proceedings paper2010-10, SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 10/10/2010, p.529-535Publication Atom probe tomography analysis of SiGe fins embedded in SiO2: facts and artefacts
Journal article2017, Ultramicroscopy, 179, p.100-107Publication Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors
Journal article2011, Microelectronic Engineering, (88) 4, p.342-346Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Proceedings paper2012, SiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices, 7/10/2012, p.875-883Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Meeting abstract2012, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices, 7/10/2012, p.3213Publication Crystalline properties and strain relaxation mechanism of CVD grown GeSn
Journal article2013, ECS Journal of Solid State Science and Technology, (2) 4, p.P134-P137Publication Elemental redistribution of Pt and Pd in nickel silicides: a comparative study
Meeting abstract2012, Materials for Advanced Metallization - MAM, 11/03/2012, p.O4-4Publication Experimental determination of the apex temperature of a semiconducting tip during laser-assisted atom probe tomography
Oral presentation2014, Atom Probe Tomography and MicroscopyPublication Ge1-xSnx stressors for strained-Ge CMOS
Meeting abstract2010, 5th International SiGe Technology and Device Meeting - ISTDM, 24/05/2010Publication Ge1-xSnx stressors for strained-Ge CMOS
Journal article2011, Solid-State Electronics, (60) 1, p.53-57Publication Interplay between relaxation and defect formation, and atomic Sn distribution in Ge(1-x)Sn(x) unraveled with atom probe tomography
Journal article2015, Journal of Applied Physics, (118) 2, p.25302Publication Mapping interfacial excess in atom probe data
Journal article2015, Ultramicroscopy, (159) Part B, p.438-444Publication Marial characterization of Ge1-xSnx alloys for strained Ge CMOS devices
Proceedings paper2010-10, The Forum on the Science and Technology of Silicon Materials - Si Forum, 14/11/2010, p.276-284Publication Material assessment for uni-axial strained Ge pMOS -1: characterization of GeSn(B) materials
Oral presentation2010, Workshop: GeSn Developments and Future ApplicationsPublication On the locally resonant absorption of light in semiconducting tips during laser-assisted Atom Probe Tomography
Meeting abstract2014, Atom Probe Tomography & Microscopy, 31/08/2014Publication On the nucleation of PdSi and NiSi2 during the ternary Ni(Pd)/Si(100) reaction
Journal article2013, Journal of Applied Physics, (114) 6, p.63518Publication Quantification of group IV alloys in confined structures: the self focusing SIMS approach
Meeting abstract2014, SIMS Europe, 7/09/2014Publication Surface chemistry of deposition processes for epitaxial Si-O superlattices
Meeting abstract2014, 14th International Conference on Atomic Layer Deposition - ALD, 15/06/2014, p.122