Browsing by Author "Duffy, Ray"

Advanced FinFET devices for sub-32nm technology nodes: characteristics and integration challenges

Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors

Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices

Carbon-based thermal stabilization techniques for junction and silicide engineering for high performance CMOS periphery in memory applications

Characteristics and integration challenges of FinFET-based devices for (Sub-)22nm technology nodes circuit applications

Chemical and electrical dopant evolution during solid phase epitaxial regrowth

Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth

CMOS device optimisation for mixed-signal technologies

Conformal doping of FINFET's: a fabrication and metrology challenge

Conformal doping of FINFET's: a fabrication and metrology challenge

Current understanding and modeling of B diffusion and activation anomalies in preamporphized ultra-shallow junctions

Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices

Doping strategies for FinFETs

Effect of amorphization on activation and deactivation of boron in source/drain, channel and poly gate

Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

Experimental studies of dose retention and activation in FinFet-based structures

First observation of FinFET specific mismatch behavior and optimization guidelines for SRAM scaling

Gatestacks for scalable high-performance FinFETs

Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

Improved fin width scaling in fully-depleted FinFETs