Browsing by Author "Goossens, Jozefien"
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Publication Accurate carrier profiling of n-type GaAs junctions
Journal article2008, Materials Science in Semiconductor Processing, (11) 5_6, p.259-266Publication Advanced 2D/3D simulations for laser annealed device using an atomic kinetic monte carlo approach and scanning spreading resistance microscopy (SRRM)
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.539-542Publication Advanced phosphorus emitters for high efficiency Si solar cells
Proceedings paper2009, 34th IEEE Photovoltaic Specialists Conference, 7/06/2009, p.878-882Publication Advanced phosphorus emitters for high efficiency Si solar cells
Proceedings paper2009, 24th European Photovoltaic Solar Energy Conference and Exhibition - EPVSEC, 21/09/2009, p.1843-1846Publication Basic aspects of the formation and activation of boron junctions using plasma immersion ion implantation
Proceedings paper2008, 17th International Conference in Ion Implantation Technology - IIT, 8/06/2008, p.464-464Publication Depth resolution and surface transients in crystalline Silicon at ultra low energies
Meeting abstract2009-09, 17th International Conference on Secondary Ion Mass Spectrometry - SIMS XVII, 14/08/2009, p.247Publication Electrical characterization of InGaAs ultra-shallow junctions
Journal article2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1C41-C1C47Publication Electrical characterization of InGaAs ultra-shallow junctions
Proceedings paper2009, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 26/04/2009Publication Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
Journal article2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1H5-C1H13Publication Experimental studies of dose retention and activation in FinFet-based structures
Proceedings paper2009, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 26/04/2009Publication High depth resolution analysis of Si/SiGe multilayers with the atom probe
Journal article2009, Applied Physics Letters, (95) 14, p.144106Publication High precision micro-scale Hall effect characterization method using in-line micro four-point probes
Proceedings paper2008, 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 30/09/2008, p.251-255Publication High precision micro-scale Hall effect characterization method using in-line micro four-point probes
Publication Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions
Proceedings paper2008, 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP, 30/09/2008, p.135-140Publication Metrology for implanted Si substrate and dopant loss studies
Proceedings paper2009, Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11, 4/10/2009, p.367-374Publication Metrology for implanted Si substrate and dopant loss studies
Meeting abstract2009, 216th ECS Meeting, 4/10/2009, p.2160Publication Metrology for implanted Si substrate loss studies
Journal article2010, Journal of the Electrochemical Society, (157) 5, p.H580-H584Publication Micro-uniformity during laser anneal: metrology and physics
Proceedings paper2008, Doping Engineering for Front-End Processing, 24/03/2008, p.1070-E01-10Publication On the activation mechanisms of sub-melt laser anneals
Meeting abstract2008, E-MRS Sprng Meeting Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008Publication On the analysis of the activation mechanisms of sub-melt laser anneals
Journal article2008, Materials Science and Engineering B, 154-155, p.24-30