Browsing by Author "Hellings, Geert"
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Publication 1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
; ; ; ; Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.134-135Publication 3D sequential stacked planar devices featuring low-temperature replacement metal gate junctionless top devices with improved reliability
; ; ; ; ; Journal article2018-11, IEEE Transactions on Electron Devices, (65) 11, p.5165-5171Publication 3D sequential stacked planar devices on 300 mm wafers featuring replacement metal gate junction-less top devices processed at 525°C with improved reliability
; ; ; ; ; Proceedings paper2018, IEEE Symposium on VLSI Technology, 18/06/2018, p.69-70Publication 3D SRAM Macro Design in 3D Nanofabric Process Technology
Journal article2023, IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, (70) 7, p.2858-2867Publication 50 nm Gate Length FinFET Biosensor & the Outlook for Single-Molecule Detection
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication 85nm-wide 1.5mA/μm-ION IFQW SiGe-pFET: raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Proceedings paper2012, Symposium on VLSI Technology - VLSIT, 12/06/2012, p.163-164Publication A 1.8-V GPIO With Design-Technology-Reliability Co-Optimization in Sub-3-nm GAA-NS Technology
Journal article2025, IEEE JOURNAL OF SOLID-STATE CIRCUITS, (60) 2, p.615-625Publication A Compact Physics Analytical Model for Hot-Carrier Degradation
Proceedings paper2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020Publication A fast and accurate method to study the impact of interface traps on germanium MOS performance
Journal article2011, IEEE Transactions on Electron Devices, (58) 4, p.938-944Publication A Holistic Evaluation of Buried Power Rails and Back-Side Power for Sub-5 nm Technology Nodes
Journal article2022-07-07, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 8, p.4453-4459Publication A physics-aware compact modeling framework for transistor aging in the entire bias space
Proceedings paper2019, IEEE International Electron Devices Meeting - IEDM, 7/12/2019, p.494-497Publication Active-lite interposer for 2.5 & 3D integration
Proceedings paper2015, IEEE Symposium on VLSI Technology, 16/06/2015, p.T222-T223Publication AlGaN Extrem-UV detectors for space applications
Proceedings paper2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 20/05/2007, p.291-294Publication AlGaN Schottky diodes for detector applications in the UV wavelength range
Proceedings paper2008, 14th Mediterrean Electrotechnical Conference - MELECON, 5/05/2008, p.916-922Publication AlGaN Schottky diodes for detector applications in the UV wavelength range
Journal article2009, IEEE Transactions on Electron Devices, (56) 11, p.2833-2839Publication AlxGa1-xN focal plane arrays for imaging applications in the extreme ultraviolet (EUV) wavelength range
Proceedings paper2007, Optical Sensing Technology and Applications, 16/05/2007, p.658505Publication Analysis of advanced technology nodes and h-NA EUV introduction: a cost perspective
Proceedings paper2021, International Conference on Extreme Ultraviolet Lithography, SEP 27-OCT 01, 2021, p.11854ODPublication Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
; ; ; ; Proceedings paper2011, IEEE International Electron Devices Meeting - IEDM, 5/12/2011, p.797-800Publication Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.30.2Publication Analysis of the features of hot-carrier degradation in FinFETs
Journal article2018-10, Semiconductors, (52) 10, p.1298-1302