Browsing by Author "Hooker, Jacob"
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Publication 45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
; ; Publication A practical baseline process for advanced CMOS devices research
Proceedings paper2003, Proceedings 33rd European Solid-State Device Research Conference - ESSDERC, 16/09/2003, p.27-30Publication ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Proceedings paper2004, Atomic Layer Deposition Conference, 16/08/2004Publication Complex admittance analysis for La2Hf2O7/SiO2 high-kappa dielectric stacks
Journal article2004-01, Applied Physics Letters, (84) 2, p.260-262Publication Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs
Proceedings paper2005, Technical Digest International Electronic Devices Meeting - IEDM, 5/12/2005, p.36-5-1-36-5-4Publication Effect of degas before metal gate deposition on the threshold voltage
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2255-2258Publication Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, Workshop "Nouveaux Oxides à Forte Permittivité dans l'Intégration des Semiconducteurs"Publication Impact of ALCVD and PVD titanium nitride deposition on metal gate capacitors
Proceedings paper2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.583-586Publication Influence of metal capping layer on the work function of Mo gated metal-oxide semiconductor stacks
Journal article2008, Applied Physics Letters, (93) 8, p.83511Publication Investigation on molybdenum and its conductive oxides as p-type metal gate candidates
Proceedings paper2007, Physics and Technology of High-k Dielectrics, 7/10/2007, p.575-583Publication Investigation on molybdenum and its conductive oxides as p-type metal gate candidates
Journal article2008, Journal of the Electrochemical Society, (155) 7, p.H481Publication Low VT CMOS using doped Hf-based oxides, TaC-based metals and laser-only anneal
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.49-52Publication Materials and electrical characterization of metal gate electrodes on high-k dielectrics for advanced CMOS technologies
Proceedings paper2002, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials - SSDM, 17/09/2002, p.174-175Publication MBE lanthanum-based high-k gate dielectrics as candidates for SiO2 gate oxide replacement
Publication Metal inserted poly-Si (MIPS) and FUSI dual metal (TaN and NiSi) CMOS integration
Proceedings paper2007-04, International Symposium on VLSI Technology, Systems, and Applications - VLSI-TSA, 23/04/2007Publication Molecular beam epitaxy for advanced gate stack materials and processes
Publication MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility SemiconductorsPublication N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices
Proceedings paper2008, 38th European Solid-State Device Research Conference - ESSDERC, 16/09/2008, p.286-289Publication NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics
Proceedings paper2005, Proceedings IEEE VLSI-TSA International Symposium on VLSI Technology, 25/04/2005, p.136-137Publication Performance and leakage optimization in carbon and fluorine C0-implanted pMOSFETs
Proceedings paper2008, International Symposium on VLSI Technology, Systems and Applications - VLSI-TSA, 21/04/2008, p.30-31