Browsing by Author "Jech, M."
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Publication Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO2 with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier Stacking
Proceedings paper2020, IEEE International Electron Devices Meeting (IEDM), DEC 12-18, 2020Publication COMPHY - A compact-physics framework for unified modeling of BTI
Journal article2018, Microelectronics Reliability, 85, p.49-65Publication Efficient physical defect model applied to PBTI in high-k stacks
Proceedings paper2017, IEEE International Reliability Physics Symposium - IRPS, 2/04/2017, p.XT-11.1-XT-11.6Publication Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.310-313Publication Hot-carrier degradation in FinFETs: modeling, peculiarities, and impact of device topology
Proceedings paper2017, IEEE International Electron Devices Meeting - IEDM, 2/12/2017, p.310-313Publication Mapping of CMOS FET degradation in bias space – Application to DRAM peripheral devices
Journal article2017, Journal of Vacuum Science and Technology B, (35) 1, p.01A109Publication Physical Modeling the Impact of Self-Heating on Hot-Carrier Degradation in pNWFETs
Proceedings paper2020, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), JUL 20-23, 2020Publication Physics-based modeling of hot-carrier degradation in Ge NWFETs
Proceedings paper2019, International Conference on Solid-State Devices and Materials - SSDM, 2/09/2019, p.565-566Publication Simulation study: the effect of random dopants and random traps on hot-carrier degration in nFinFETs
Proceedings paper2020, International Conference on Solid-State Devices and Materials - SSDM, 2/09/2019, p.609-610Publication The impact of self-heating and its implications on hot-carrier degradation-A modeling study
Journal article2021, MICROELECTRONICS RELIABILITY, (122) 1