Browsing by Author "Kim, Ryan Ryoung han"
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Publication 21 nm Pitch dual-damascene BEOL process integration with full barrierless Ru metallization
Proceedings paper2019, IEEE International Interconnect Technology Conference (IITC 2019) and Materials for Advanced Metallization Conference (MAM 2019), 3/06/2019, p.3.4Publication 2D self-aligned via patterning strategy with EUV single exposure in 3nm technology
Proceedings paper2017, Extreme Ultraviolet (EUV) Lithography VIII, 26/02/2017, p.1014321Publication A yield prediction model and cost of ownership for productivity enhancement beyond imec 5nm technology node
Proceedings paper2022, Conference on DTCO and Computational Patterning, APR 24-MAY 27, 2022, p.1205203Publication Analysis of advanced technology nodes and h-NA EUV introduction: a cost perspective
Proceedings paper2021, International Conference on Extreme Ultraviolet Lithography, SEP 27-OCT 01, 2021, p.11854ODPublication CFET standard-cell design down to 3Track height for node 3nm and below
Proceedings paper2019, Design-Process-Technology Co-optimization for Manufacturability XIII, 24/02/2019, p.1096206Publication Concurrent design rule, OPC and process optimization in EUV lithography
Meeting abstract2020, Design-Process-Technology Co-optimization for Manufacturability XIV, 23/02/2020, p.1132804Publication Cost-performance optimisation of fine-pitch W2W bonding: functional system partitioning with heterogeneous FEOL/BEOL configurations
Proceedings paper2020, Design-Process-Technology Co-optimization for Manufacturability XIV, 23/02/2020, p.113280RPublication Curvilinear Standard Cell Design for Semiconductor Manufacturing
Journal article2024, IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, (37) 2, p.152-159Publication Design and Mask Optimization Toward Low Dose EUV Exposure
Proceedings paper2022-05-26, Conference on DTCO and Computational Patterning, APR 24-MAY 27, 2022, p.120520CPublication Design and pitch scaling for affordable node transition and EUV insertion scenario
Proceedings paper2017, Design-Process-Technology Co-optimization for Manufacturability XI, 26/02/2017, p.101480VPublication Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison
Proceedings paper2018, Extreme Ultraviolet (EUV) Lithography IX, 26/02/2018, p.105830OPublication Economics of semiconductor scaling – a cost analysis for advanced technology node
Proceedings paper2019, 2019 Symposia on VLSI Technology and CircuitsVLSI Symposium Technology, 8/06/2019, p.T202-T203Publication Electrical comparison of iN7 EUV hybrid and EUV single patterning BEOL metal layers
Proceedings paper2018, Extreme Ultraviolet (EUV) Lithography IX, 25/02/2018, p.105830UPublication EUV based multi-patterning schemes for advanced DRAM nodes
Proceedings paper2022, Conference on Advances in Patterning Materials and Processes XXXIX Part of SPIE Advanced Lithography and Patterning Conference, APR 24-MAY 27, 2022, p.Art. 1205503Publication EUV lithography and the materials that propel it forward
Meeting abstract2020, 2020 EUVL Workshop, 7/06/2020Publication EUV Single Patterning Exploration for Pitch 28 nm
; ; ; ; ; Kim, Ryan Ryoung hanProceedings paper2021-02-22, Conference on Design-Process-Technology Co-optimization XV, FEB 22-26, 2021Publication EUV single patterning for logic metal layers: achievement and challenge
Proceedings paper2017, International Conference on Extreme Ultraviolet Lithography, 17/09/2017, p.1045004Publication EUVL Gen 2.0: Key requirements for constraining semiconductor cost in advanced technology node manufacturing
Proceedings paper2018, Extreme Ultraviolet (EUV) Lithography IX, 25/02/2018, p.1058326Publication EUVL is being inserted in HVM in 2019 : what are the mask related challenges remaining ?
Proceedings paper2019, 35th European Mask and Lithography Conference (EMLC 2019), 17/06/2019, p.111770APublication Exploration of Alternative Mask for 0.33NA EUV Single Patterning at Pitch 28nm
Proceedings paper2021-10-12, International Conference on Extreme Ultraviolet Lithography, SEP 27-OCT 01, 2021
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