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Browsing by Author "Kissinger, G."

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    Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics

    Vanhellemont, Jan
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    Kissinger, G.
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    Kenis, Karine  
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    Depas, Michel
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    Gräf, D.
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    Lambert, U.
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    Wagner, P.
    Meeting abstract
    1996, Belgische Natuurkundige Vereniging. Algemene Wetenschappelijke Vergadering, 6/06/1996
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    Defects in As-grown silicon and their evolution during heat treatments

    Vanhellemont, Jan
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    Dornberger, E.
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    Esfandyari, J.
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    Kissinger, G.
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    Trauwaert, Marie-Astrid
    Proceedings paper
    1997, Defects in Semiconductors 19 - ICDS 19, 21/07/1997, p.341-6
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    Grown-in defect density spectra in czochralski silicon wafers

    Kissinger, G.
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    Gräf, D.
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    Lambert, U.
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    Vanhellemont, Jan
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    Richter, H.
    Oral presentation
    1996, 2nd International Symposium on Advanced Science and Technology of Silicon Materials
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    Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments

    Vanhellemont, Jan
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    Kissinger, G.
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    Clauws, P.
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    Kaniava, Arvydas
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    Libezny, Milan
    Proceedings paper
    1996, Proceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95, 2/09/1995, p.229-234
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    Investigation of crystal defects in As-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering

    Kissinger, G.
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    Vanhellemont, Jan
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    Gräf, D.
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    Zulehner, W.
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    Claeys, Cor
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    Richter, H.
    Proceedings paper
    1995, ALTECH 95: Analytical Techniques for Semiconductor Materials and Process Characterization II. Proceedings of the Satellite Sympo, 28/09/1995, p.156-165
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    Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

    Kissinger, G.
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    Vanhellemont, Jan
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    Simoen, Eddy  
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    Claeys, Cor
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    Richter, H.
    Journal article
    1996, Materials Science and Engineering B, B36, p.225-229
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    IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers

    Kissinger, G.
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    Vanhellemont, Jan
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    Gräf, D.
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    Claeys, Cor
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    Richter, H.
    Proceedings paper
    1996, Defect Recognition and Image Processing in Semiconductors 1995 - DRIP. Proceedings of the 6th International Conference, 3/12/1995, p.19-24
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    Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques

    Vanhellemont, Jan
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    Kissinger, G.
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    Gräf, D.
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    Kenis, Karine  
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    Depas, Michel
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    Mertens, Paul  
    ;
    Lambert, U.
    Proceedings paper
    1995, Proceedings 18th International Conference on Defects in Semiconductors - ICDS-18; July 23 -28, 1995; Sendai, Japan., 23/07/1995, p.1755-1760
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    Light scattering tomography study of lattice defects in high quality as-grown Cz silicon wafers and their evolution during gate oxidation

    Vanhellemont, Jan
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    Kissinger, G.
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    Gräf, D.
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    Kenis, Karine  
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    Depas, Michel
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    Mertens, Paul  
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    Lambert, U.
    Proceedings paper
    1996, Defect Recognition and Image Processing in Semiconductors - DRIP. Proceedings of the 6th International Conference, 3/12/1995, p.331-336
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    Measurement, modelling and simulation of defects in as-grown Czrochalski silicon

    Vanhellemont, Jan
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    Senkader, S.
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    Kissinger, G.
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    Higgs, V.
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    Trauwaert, Marie-Astrid
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    Graef, D.
    Journal article
    1997, Journal of Crystal Growth, (180) 3_4, p.353-62
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    Non-destructive techniques for identification and control of processing induced extended defects in silicon and correlation with device yield

    Vanhellemont, Jan
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    Milita, S.
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    Servidori, M.
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    Higgs, V.
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    Kissinger, G.
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    Gramenova, Emilia
    Journal article
    1997, Journal de Physique III, 7, p.1425-1433
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    Observation of stacking faults and prismatic punching systems in silicon by light scattering tomography

    Kissinger, G.
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    Vanhellemont, Jan
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    Claeys, Cor
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    Richter, H.
    Journal article
    1996, Journal of Crystal Growth, 158, p.191-196
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    On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity

    Vanhellemont, Jan
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    Kissinger, G.
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    Kenis, Karine  
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    Depas, Michel
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    Gräf, D.
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    Lambert, U.
    Proceedings paper
    1996, Early Stages of Oxygen Precipitation in Silicon; NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Sili, 26/03/1996, p.493-500
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    On the impact of grown-in substrate defects and iron contamination on gate oxide integrity

    Vanhellemont, Jan
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    Kissinger, G.
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    Kenis, Karine  
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    Depas, Michel
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    Gräf, D.
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    Lambert, U.
    Proceedings paper
    1996, Proceedings of the 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 23/09/1996, p.313-316
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    On the nature of grown-in defects in silicon: dependence on pulling conditions and evolution during treatments

    Vanhellemont, Jan
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    Kissinger, G.
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    Senkader, S.
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    Gräf, D.
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    Kenis, Karine  
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    Depas, Michel
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    Lambert, U.
    Proceedings paper
    1996, Proceedings of the 4th International Symposium on High Purity Silicon, 6/10/1996, p.226-237
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    On the recombination activity of oxygen precipitation related lattice defects in silicon

    Vanhellemont, Jan
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    Kaniava, Arvydas
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    Libezny, Milan
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    Simoen, Eddy  
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    Kissinger, G.
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    Gaubas, E.
    Proceedings paper
    1995, Defect- and Impurity-Engineered Semiconductors and Devices, 17/04/1995, p.35-40
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    PL study of oxygen related defects in silicon

    Libezny, Milan
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    Kaniava, Arvydas
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    Kissinger, G.
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    Nijs, Johan
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    Claeys, Cor
    ;
    Vanhellemont, Jan
    Proceedings paper
    1995, ALTECH 95: Analytical Techniques for Semiconductor Materials and Process Characterization II. Proceedings of the Satellite Sympo, 28/09/1995, p.166-172

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