Browsing by Author "Kissinger, G."
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Publication Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics
Meeting abstract1996, Belgische Natuurkundige Vereniging. Algemene Wetenschappelijke Vergadering, 6/06/1996Publication Defects in As-grown silicon and their evolution during heat treatments
;Vanhellemont, Jan ;Dornberger, E. ;Esfandyari, J. ;Kissinger, G.Trauwaert, Marie-AstridProceedings paper1997, Defects in Semiconductors 19 - ICDS 19, 21/07/1997, p.341-6Publication Grown-in defect density spectra in czochralski silicon wafers
;Kissinger, G. ;Gräf, D. ;Lambert, U. ;Vanhellemont, JanRichter, H.Oral presentation1996, 2nd International Symposium on Advanced Science and Technology of Silicon MaterialsPublication Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments
;Vanhellemont, Jan ;Kissinger, G. ;Clauws, P. ;Kaniava, ArvydasLibezny, MilanProceedings paper1996, Proceedings of the 6th Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology - GADEST'95, 2/09/1995, p.229-234Publication Investigation of crystal defects in As-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering
;Kissinger, G. ;Vanhellemont, Jan ;Gräf, D. ;Zulehner, W. ;Claeys, CorRichter, H.Proceedings paper1995, ALTECH 95: Analytical Techniques for Semiconductor Materials and Process Characterization II. Proceedings of the Satellite Sympo, 28/09/1995, p.156-165Publication Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography
Journal article1996, Materials Science and Engineering B, B36, p.225-229Publication IR-LST a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers
;Kissinger, G. ;Vanhellemont, Jan ;Gräf, D. ;Claeys, CorRichter, H.Proceedings paper1996, Defect Recognition and Image Processing in Semiconductors 1995 - DRIP. Proceedings of the 6th International Conference, 3/12/1995, p.19-24Publication Lattice defects in high quality as-grown CZ silicon, studied with light scattering and preferential etching techniques
;Vanhellemont, Jan ;Kissinger, G. ;Gräf, D.; ;Depas, Michel; Lambert, U.Proceedings paper1995, Proceedings 18th International Conference on Defects in Semiconductors - ICDS-18; July 23 -28, 1995; Sendai, Japan., 23/07/1995, p.1755-1760Publication Light scattering tomography study of lattice defects in high quality as-grown Cz silicon wafers and their evolution during gate oxidation
;Vanhellemont, Jan ;Kissinger, G. ;Gräf, D.; ;Depas, Michel; Lambert, U.Proceedings paper1996, Defect Recognition and Image Processing in Semiconductors - DRIP. Proceedings of the 6th International Conference, 3/12/1995, p.331-336Publication Measurement, modelling and simulation of defects in as-grown Czrochalski silicon
;Vanhellemont, Jan ;Senkader, S. ;Kissinger, G. ;Higgs, V. ;Trauwaert, Marie-AstridGraef, D.Journal article1997, Journal of Crystal Growth, (180) 3_4, p.353-62Publication Non-destructive techniques for identification and control of processing induced extended defects in silicon and correlation with device yield
;Vanhellemont, Jan ;Milita, S. ;Servidori, M. ;Higgs, V. ;Kissinger, G.Gramenova, EmiliaJournal article1997, Journal de Physique III, 7, p.1425-1433Publication Observation of stacking faults and prismatic punching systems in silicon by light scattering tomography
;Kissinger, G. ;Vanhellemont, Jan ;Claeys, CorRichter, H.Journal article1996, Journal of Crystal Growth, 158, p.191-196Publication On the impact of grown-in silicon oxide precipitate nuclei on silicon gate oxide integrity
Proceedings paper1996, Early Stages of Oxygen Precipitation in Silicon; NATO Advanced Research Workshop on Early Stages of Oxygen Precipitation in Sili, 26/03/1996, p.493-500Publication On the impact of grown-in substrate defects and iron contamination on gate oxide integrity
Proceedings paper1996, Proceedings of the 3rd International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSS, 23/09/1996, p.313-316Publication On the nature of grown-in defects in silicon: dependence on pulling conditions and evolution during treatments
;Vanhellemont, Jan ;Kissinger, G. ;Senkader, S. ;Gräf, D.; ;Depas, MichelLambert, U.Proceedings paper1996, Proceedings of the 4th International Symposium on High Purity Silicon, 6/10/1996, p.226-237Publication On the recombination activity of oxygen precipitation related lattice defects in silicon
Proceedings paper1995, Defect- and Impurity-Engineered Semiconductors and Devices, 17/04/1995, p.35-40Publication PL study of oxygen related defects in silicon
;Libezny, Milan ;Kaniava, Arvydas ;Kissinger, G. ;Nijs, Johan ;Claeys, CorVanhellemont, JanProceedings paper1995, ALTECH 95: Analytical Techniques for Semiconductor Materials and Process Characterization II. Proceedings of the Satellite Sympo, 28/09/1995, p.166-172