Browsing by Author "Krishnasamy, Rajendran"

A novel model for boron diffusion in SiGe strained layers based on a kinetic driven Ge-B pairing mechanism

A simple model and simulation of complete suppression of boron out-diffusion in Si1-xGex by carbon insertion

A simple modelling of device speed in double-gate SOI MOSFETs

Comparative analysis of minimum surface potential and location of barrier peaks in various Si MOSFET devices

Measurement and simulation of boron diffusion in strained Si1- xGex epitaxial layers

Measurement and simulation of boron diffusion in strained Si1- xGex epitaxial layers with a linearly graded germanium profile

Measurement and simulation of boron diffusion in strained Si1-xGex epitaxial layers with linearly graded germanium profile

Measurement and simulation of boron diffusivity in strained Si1-XGex epitaxial layers

Measurement and simulation of boron diffusivity in strained Si1-xGex epitaxial layers

Modeling and simulation of nonlinear electron-hole plasma in deep submicron n-MOSFET devices

Modeling of clustering reaction and diffusion of boron in strained Si1-xGex epitaxial layers

Modeling of complete suppression of boron out-diffusion in Si1-xGex by carbon incorporation

Modeling of minimum surface potential and sub-threshold swing for grooved-gate MOSFETs

Modelling and computer simulation study of laser-plasma interaction in semiconductor

Modelling of transconductance-to-current ratio (g(m)ID) analysis on double-gate SOI MOSFETs

Simulation of boron diffusion in strained Si1-xGex epitaxial layers

Studies of boron diffusion in strained Si1-xGex epitaxial layers