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Browsing by Author "Kunnen, Eddy"

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    15nm half-pitch patterning: EUV + SELF-aligned double patterning

    Versluijs, Janko  
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    Souriau, Laurent  
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    Hellin, David  
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    Orain, Isabelle
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    Kimura, Yoshie
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    Kunnen, Eddy
    Oral presentation
    2012, International Symposium on Extreme Ultraviolet Lithography - EUVL
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    15nm HP patterning with EUV lithography and SADP

    Souriau, Laurent  
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    Hellin, David  
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    Kunnen, Eddy
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    Versluijs, Janko  
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    Dekkers, Harold  
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    Albert, Johan
    Meeting abstract
    2012, 34th International Symposium on Dry Process - DPS, 15/11/2012
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    2D and 3D photoresist line roughness characterization

    Vaglio Pret, Alessandro  
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    Kunnen, Eddy
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    Gronheid, Roel  
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    Pargon, Erwine
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    Luere, Olivier
    Journal article
    2013, Microelectronic Engineering, 110, p.100-107
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    2D and 3D photoresist line roughness characterization

    Vaglio Pret, Alessandro  
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    Gronheid, Roel  
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    Kunnen, Eddy
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    Pargon, Erwine
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    Luere, Olivier
    Oral presentation
    2012, 38th International Micro & Nano Engineering Conference - MNE
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    A 35nm diameter vertical silicon nanowire short-gate tunnelFET

    Vandooren, Anne  
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    Rooyackers, Rita
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    Leonelli, Daniele  
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    Iacopi, Francesca
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    De Gendt, Stefan  
    Proceedings paper
    2009, Nanotechnology Workshop, 13/06/2009
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    A novel fully self-aligned SiGe:C HBT architecture featuring a single step epitaxial collector-base process

    Donkers, Johan
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    Kramer, Mark
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    Van Huylenbroeck, Stefaan  
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    Choi, Li Jen
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.655-658
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    A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology

    Choi, Li Jen
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    Van Huylenbroeck, Stefaan  
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    Donkers, Johan
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    van Noort, Wibo
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    Piontek, Andreas
    Proceedings paper
    2007, Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting, 10/01/2007, p.158-161
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    A way to integrate multiple block layers for middle of line contact patterning

    Kunnen, Eddy
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    Demuynck, Steven  
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    Brouri, Mohand
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    Boemmels, Juergen  
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    Versluijs, Janko  
    Proceedings paper
    2015, Advanced Etch Technology for Nanopattering IV, 22/02/2015, p.94280W
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    Active species in porous media: random walk and capture in traps

    Arkhincheev, Valeriy
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    Kunnen, Eddy
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    Baklanov, Mikhaïl
    Meeting abstract
    2010, Materials for Advanced Metallization - MAM, 7/03/2010
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    Active species in porous media: random walk and capture in traps

    Arkhincheev, V.E.
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    Kunnen, Eddy
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    Baklanov, Mikhaïl
    Journal article
    2011, Microelectronic Engineering, (88) 5, p.694-696
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    BEOL compatible WS2 transistors fully fabricated in a 300 mm pilot line

    Schram, Tom  
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    Smets, Quentin  
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    Heyne, Markus
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    Groven, Benjamin  
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    Kunnen, Eddy
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    Thiam, Arame  
    Proceedings paper
    2017, Silicon Nanoelectronics Workshop - SNW, 4/07/2017, p.139-140
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    CMOS patterning over high aspect ratio topographies for N10/N7 using spin-on carbon hardmasks

    Hopf, Toby  
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    Ercken, Monique  
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    Mannaert, Geert  
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    Kunnen, Eddy
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    Tao, Zheng  
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    Vandenbroeck, Nadia  
    Proceedings paper
    2017, Advances in Patterning Materials and Processes XXXIV, 26/02/2017, p.1014618
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    CMOS patterning over high-aspect ratio topographies for N10/N7 using spin-on carbon hardmasks

    Hopf, Toby  
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    Ercken, Monique  
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    Mannaert, Geert  
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    Kunnen, Eddy
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    Tao, Zheng  
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    Vandenbroeck, Nadia  
    Proceedings paper
    2017, Advances in Patterning Materials and Processes XXXIV, 26/02/2017, p.1014618
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    Contact module at dense gate pitch technology challenges

    Demuynck, Steven  
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    Mao, Ming  
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    Kunnen, Eddy
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    Versluijs, Janko  
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    Croes, Kristof  
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    Wu, Chen  
    Proceedings paper
    2014, IEEE International Interconnect Technology Conference - IITC, 20/05/2014, p.307-310
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    Cu resistivity scaling limits for 20 nm copper damascene lines

    Van Olmen, Jan  
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    List, Scott
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    Tokei, Zsolt  
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    Carbonell, Laure
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    Brongersma, Sywert  
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    Volders, Henny  
    Proceedings paper
    2007, IEEE International Interconnect Technology Conference - IITC, 4/06/2007, p.49-51
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    Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope

    Masahara, Meishoku
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    Surdeanu, Radu
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    Witters, Liesbeth  
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    Doornbos, Gerben  
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    Nguyen Hoang, Viet
    Journal article
    2007-03, IEEE Electron Device Letters, (28) 3, p.217-219
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    Development of 2-step plasma texturing process for crystalline silicon solar cells with Linear Microwave Plasma Sources (LPS)

    Chan, BT  
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    Kunnen, Eddy
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    Shamiryan, Denis
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    Xu, Kaidong
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    Boullart, Werner  
    Meeting abstract
    2011, 4th International Workshop Plasma Etch and Strip in Microelectronics - PESM, 5/05/2011
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    Development, optimization and evaluation of a CF4 pre-treatment process to remove unwanted interfacial layers in stacks of CVD and PECVD polycrystalline silicon-germanium for MEMS applications

    Bryce, George  
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    Severi, Simone  
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    Van Hoof, Rita  
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    Guo, Bin
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    Kunnen, Eddy
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    Witvrouw, Ann
    Meeting abstract
    2010, 217th ECS Meeting, 25/04/2010, p.1817
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    Development, optimization and evaluation of a CF4 pretreatment process to remove unwanted interfacial layers in stacks of CVD and PECVD polycrystalline silicon-germanium for MEMS applications

    Bryce, George  
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    Severi, Simone  
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    Van Hoof, Rita  
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    Guo, Bin
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    Kunnen, Eddy
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    Witvrouw, Ann
    Proceedings paper
    2010, Sensors, Actuators, and Microsystems (General), 25/04/2010, p.79-90
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    Double-gate Si junction-less n-type transistor for high performance Cu-BEOL compatible applications using 3D sequential integration

    Vandooren, Anne  
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    Witters, Liesbeth  
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    Vecchio, Emma  
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    Kunnen, Eddy
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    Hellings, Geert  
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    Peng, Lan  
    Proceedings paper
    2017, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference - IEEE S3S, 16/10/2017, p.5.3
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